CLASS-C MOSFET Search Results

MSK101

Abstract: MSK101B deflection Bridge
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH POWER DUAL OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 101 315 701-6751 FEATURES: Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V Low Quiescent Current : ± 8.0 mA Total Typ. In Class "C" Mode

schematics for a PA amplifier class c

Abstract: MSK153 MSK153B AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. HIGH POWER OPERATIONAL AMPLIFIER 4707 Dey Road Liverpool, N.Y. 13088 153 315 701-6751 FEATURES: MIL-PRF-38534 QUALIFIED Operates In Class AB Or Class C Mode Low Cost High Voltage Operation : 150V Low Quiescent Current :± 4.0 mA Typ. In Class "C"

4325-DS-01

Abstract: ISO 18000-6D
Contextual Info: EM MICROELECTRONIC - MARIN SA EM4325 18000-6 Type C Gen2 and Type C/D (Gen2/TOTAL) RFID IC Description EM4325 is a Class-3 Generation-2 (Gen2) IC that is compliant with ISO/IEC 18000-6:2010 Type C and Type D TM (TOTAL) as well as EPC Class-1 Generation-2. The chip

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 1, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Document Number: MRF8S8260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical

IrL 1540 N

Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

MOSFET J132

Abstract: J132 MOSFET J127 mosfet J1955 ATC100B101 MRF8S7170N 748 transistor on AN1955 JESD22-A113 JESD22-A114
Contextual Info: Document Number: MRF8S7170N Rev. 0, 2/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7170NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

"RF MOSFETs"

Abstract: "RF MOSFET" 731 MOSFET IXZ308N120 mosfet 440 mhz MOSFET RF POWER
Contextual Info: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast

Contextual Info: IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RFRF MOSFET MOSFET Lo Capacitance Low CapacitanceZ-MOS Z-MOS MOSFET MOSFETProcess Process TMTM Optimized for RF Linear Operation Operation Ideal for Class AB C, D, & C, & EBroadcast

mosfet 4702

Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Contextual Info: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

IXZ318N50

Contextual Info: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V

0.047 mF CAPACITOR

Abstract: rectifier diode piv table d0312 PFS708EG TUBE Light Choke connection diagram
Contextual Info: PFS704-729EG HiperPFS Family High Power PFC Controller with Integrated High-Voltage MOSFET Key Benefits • Single chip solution for boost power factor correction PFC • EN61000-3-2 Class C and D compliant • High light load efficiency at 10% and 20% load

PFS728

Abstract: rectifier diode piv table TUBE Light Choke connection diagram CAP002DG 0.047 mf capacitor diode 1n5408 temperature rating
Contextual Info: PFS704-729EG HiperPFS Family High Power PFC Controller with Integrated High-Voltage MOSFET Key Benefits • Single chip solution for boost power factor correction PFC • EN61000-3-2 Class C and D compliant • High light load efficiency at 10% and 20% load

Contextual Info: □ IXYS Advanced Technical Information V.DSS IXFH 20N60Q IXFT 20N60Q HiPerFET Power MOSFETs = D25 Q Class DS on = 600 V 20 A 0.35 Q trr < 250ns N-Channel Enhancement Mode Avalanche Rated High dv/dt Gate Charge and Capacitances Maximum Ratings Symbol Test C onditions

hard disk motor driver

Abstract: Motor current sense linear actuator Hard Disk Drive voice coil linear class h amplifier
Contextual Info: SILICONIX INC 33E D • Ô254735 ÜDlblb? 1 « S I X SÏ9962CY 5-V Voice Coil Motor Driver C T S iB c o n iK ,XJP in c o rp o ra te d FEATURES 'T-5Z-13-ZS • • • • • 200 mA H-Bridge Output • Class B Linear Operation • Externally Programmable Gain

Contextual Info: H Î Y Y S Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q Q Class Symbol Test C onditions Maximum Ratings v DSS Td = 25°C to 150°C 500 V v DGR Td = 25°C to 150°C; RGS = 1 MQ 500 V VGS V GSM Continuous +20 V Transient +30

AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

Abstract: MSK138 MSK139 schematic diagram 13,8 VDC POWER SUPPLY
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. CLASS C HIGH POWER OPERATIONAL AMPLIFIER 138/139 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: Low Cost High Voltage Operation: 150V Ultra Low Quiescent Current: ±4.0 mA Typ.

Contextual Info: ISO-9001 CERTIFIED BY DESC M.S.KENNEDY CORP. CLASS 'C' HIGH POWER OPERATIONAL AMPLIFIER 141/142 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 MIL-PRF-38534 QUALIFIED FEATURES: Internally Compensated For Gains > 10 V/V Low Cost High Voltage Operation: 150V

cr0603 VENKEL

Abstract: C0603X5R6R3
Contextual Info: AN726 U TILITY C LASS - D TOOL S T I C K U SER ’ S G UIDE 1. Introduction Class-D is a switching power amplifier architecture that uses high-frequency Pulse-Width Modulation PWM to generate the output waveform. The transistors are fully on or fully off, which means this architecture can reach very