CLASS A LINEAR HF Search Results

10AM11

Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
Contextual Info: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

fe 8622

Abstract: 422-371 23A025 521603 18896
Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

23A017

Abstract: 33797 4561 140452
Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

4435 ic

Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314
Contextual Info: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

97942

Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

C 33725

Abstract: 4501 ic 6483 10A015 080620 144089 040196 BVces 33970 34-41-50
Contextual Info: 10A015 1.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

30054

Abstract: transistor 30054 8560 cob 2a82 17052 30054 transistor 326970 Diode 2A8 150401 28438
Contextual Info: 2A8 0.5 Watts, 20 Volts, Class A Linear to 2000 MHz GENERAL DESCRIPTION The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. It utilizes gold

23A008

Abstract: 23A008-2 305303 69099 75902 79121
Contextual Info: 23A008 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

1N4153

Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

ic an 7591

Abstract: ic 7483 023243 TRANSISTOR 1a5 7483 IC an 7591 44222 63-8687 74718 5310
Contextual Info: 1A5/1A5A 0.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 1A5/1A5A is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold

sps 1951 transistor

Abstract: mrf857s MOTOROLA ELECTROLYTIC CAPACITOR transistor motorola 359 mrf857
Contextual Info: MOTOROLA Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA MRF857S Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. CLASS A

SD1490

Abstract: ATC 100A
Contextual Info: SD1490 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 28 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

SD1732

Abstract: TDS595 s3 vision LCC capacitor S2
Contextual Info: SD1732 TDS595 RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

MLN2037F

Abstract: D 5888 s transistor 1548 b D 5888 equivalent transistor c 5888 ASI10635
Contextual Info: MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. A ØD FEATURES: B E • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold Metalization System

80196

Abstract: MSC80196
Contextual Info: MSC80196 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .250 2LFL S011

indiana general

Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
Contextual Info: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is

M122

Abstract: SD1448 TCC598 10pf atc
Contextual Info: SD1448 TCC598 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . 860 MHz 25 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 4.0 W MIN. WITH 7.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1448 BRANDING TCC598

MSC80185

Abstract: MSC80186 S027
Contextual Info: MSC80186 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 15:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.5 dB @ 2 GHz POUT = 30.0 dBm MIN. .230 4L STUD S027

CLASS AB

Abstract: NEL2012F03-24
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN:

167-097

Abstract: 121-208 167-097-1 l 93059 61256 1617AM10 164512
Contextual Info: 1617AM10 10 Watts, 18 Volts, Class A Linear 1500 - 1800 MHz GENERAL DESCRIPTION CASE OUTLINE 55AT, STYLE 2 The 1617AM10 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 10 Watts, P1dB., Class A, RF output power in the band 1500 - 1800 MHz. The transistor includes double input and output prematching for full

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1502 RF & MICROWAVE TRANSISTORS UHF TV\LINEAR APPLICATIONS Features • • • • • • 860 MHz GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 0.5 WATTS GP = 9.5 dB MINIMUM

13MM

Abstract: PH1819-4N v6 4n diode
Contextual Info: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point

MLN2027F

Abstract: 5888 ASI10630
Contextual Info: MLN2027F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG DESCRIPTION: A The ASI MLN2027F is Designed for Class A Linear Applications up to 2.0 GHz. ØD B .060 x 45° CHAMFER C E FEATURES: G • Class A Operation • PG = 8.0 dB at 0.5 W/2.0 GHz • Omnigold Metalization System