CLASS A LINEAR HF Search Results

5CX1500A

Abstract: 5cx1500 SK-840
Contextual Info: SVETLANA TECHNICAL DATA 5CX1500A Power Pentode T The Svetlana 5CX1500A is a high-performance ceramic/metal power pentode designed for use as a highly linear Class AB1 linear amplifier. It may also be used as a high-gain Class C amplifier in HF radio frequency

ferroxcube 4322 020 97171

Abstract: philips ferroxcube 4c6 NCO8704 philips toroidal transformer 2222 852 47103 PHILIPS toroidal core 4322 020 97171 toroidal transformer for philips BLF244 NCO8705
Contextual Info: APPLICATION NOTE Linear performance of BLF244 in S.S.B. class-A operation NCO8704 Philips Semiconductors Linear performance of BLF244 in S.S.B. class-A operation CONTENTS 1 INTRODUCTION 2 TESTCIRCUIT 3 TESTCONDITIONS 4 TESTRESULTS 5 CONCLUSION 1998 Mar 23

EIMAC* 5CX1500A

Abstract: 5CX1500A scans-048 DSAGER00032
Contextual Info: 5CX1500A Power Pentode he Svetlana 5CX1500A is a highperformance ceram ic/m etal power pentode designed for use as a highly linear Class AB I linear amplifier. It may also be used as a high-gain Class C amplifier in HF radio frequency' industrial processing applications such as plasma

philips ferroxcube 4c6

Abstract: ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook
Contextual Info: APPLICATION NOTE A linear amplifier 1.6 − 28 MHz for 8 W PEP in class-A with the BLF175 NCO8705 Philips Semiconductors A linear amplifier (1.6 − 28 MHz) for 8 W PEP in class-A with the BLF175 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 GENERAL CONSIDERATIONS

C 5478 transistor

Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB

C 5478 transistor

Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear"
Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB

10AM11

Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
Contextual Info: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

fe 8622

Abstract: 422-371 23A025 521603 18896
Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

23A017

Abstract: 33797 4561 140452
Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

ic 4040

Abstract: IC 7427 134179 IC 8256 10AM12 153637
Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

4435 ic

Abstract: data sheet IC 4435 IC 2272 DATASHEET IC 7446 1140-17 02580 2482 TRANSISTOR data sheet ic 7446 IC 7446 A 158314
Contextual Info: 80143 1.0 Watts, 15 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 80143 is a COMMON EMITTER transistor capable of providing 1.0 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

IC 7476

Abstract: IC 7476 datasheet 7476 IC datasheet data sheet IC 7476 data sheet of ic 7476 ic 7476 data sheet ic 7840 7476 data sheet 10A030 58167
Contextual Info: 10A030 3 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A030 is a COMMON EMITTER transistor capable of providing 3 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

97942

Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

10AM12

Abstract: COB1
Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

ic 74682

Abstract: 160852 085016 74682 8813 40507 10AM05 44050-7 172113 E+170968
Contextual Info: 10AM05 5.0 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM05 is a COMMON EMITTER transistor capable of providing 5 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

transistor oc 76

Abstract: 23A017
Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

100227

Abstract: NEL2012F03-24 8614
Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB

Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR NEL2012F03-24 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: PACKAGE OUTLINE F03 5 W Class A, 16 W Class AB • USEABLE FROM 1.8 TO 2.0 GHz 2.8±0.2 • HIGH LINEAR GAIN: 13.5 dB Class A, 11.0 dB Class AB

30054

Abstract: transistor 30054 8560 cob 2a82 17052 30054 transistor 326970 Diode 2A8 150401 28438
Contextual Info: 2A8 0.5 Watts, 20 Volts, Class A Linear to 2000 MHz GENERAL DESCRIPTION The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. It utilizes gold

67334

Abstract: data sheet IC 74266 74266 IC 74160 IC 74160 DATA SHEET ic 74266 data sheet IC 7474 IC 4614 IC 7474 datasheet 55295
Contextual Info: 23A005 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A005 is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold

23A008

Abstract: 23A008-2 305303 69099 75902 79121
Contextual Info: 23A008 0.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A008 is a COMMON EMITTER transistor capable of providing up to 0.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

transistor ft 960

Abstract: 1000MP
Contextual Info: 1000MP 0.6 Watts, 18 Volts, Class A Linear to 1150 MHz GENERAL DESCRIPTION The 1000MP is a COMMON EMITTER transistor capable of providing 0.6 Watt of Class A, RF output power to 1150 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization

1N4153

Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN: