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    CLAMPING DIODE Search Results

    CLAMPING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE805NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Datasheet
    TCKE905NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 2.7 to 23V, 4A, Latch, Fixed Over Voltage Clamp, WSON8 Datasheet
    TCKE912NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 2.7 to 23V, 4A, Latch, Fixed Over Voltage Clamp, WSON8 Datasheet
    TCKE812NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Datasheet
    TCKE920NL
    Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 2.7 to 23V, 4A, Latch, Fixed Over Voltage Clamp, WSON8 Datasheet

    CLAMPING DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BU900TP

    Abstract: JESD97 sot82fm
    Contextual Info: BU900TP NPN power TRILINTON Preliminary Data Features • Integrated high voltage active clamping zener ■ Integrated antiparallel collector-emitter diode ■ Clamping energy capability 100% tested ■ Very high current gain 1 Applications ■ Engine ignition control


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    bu900tpot-82jesd97sot82fm PDF

    L9700

    Contextual Info: L9700 HEX PRECISION LIMITER . . . . HIGH PERFORMANCE CLAMPING AT GROUND AND POSITIVE REFERENCE VOLTAGE FAST ACTIVE CLAMPING OPERATING RANGE 4.75 - 5.25 V SINGLE VOLTAGE FOR SUPPLY AND POSITIVE REFERENCE LOW QUIESCENT CURRENT LOW INPUT LEAKAGE CURRENT


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    l9700 PDF

    INK100

    Contextual Info: L9700D-E Hex precision limiter Features • High performance clamping at ground and positive reference voltage ■ Fast active clamping ■ Operating range 4.75 V - 5.25 V ■ Single voltage for supply and positive reference ■ Low quiescent current Description


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    l9700d-el9700dtr-eink100 PDF

    MC6805S2

    Abstract: motorola automotive transistor coil ignition tcf6000 TCF6000D 100 micro farad capacitor car ignition circuit diagram 400 micro farad capacitor
    Contextual Info: Order this document by TCF6000/D TCF6000 Peripheral Clamping Array The TCF6000 was designed to protect input/output lines of microprocessor systems against voltage transients. • • • • • PERIPHERAL CLAMPING ARRAY Optimized for HMOS System Minimal Component Count


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    tcf6000/dtcf6000mc6805s2motorola automotive transistor coil ignition+4tcf6000d100 micro farad capacitorcar ignition circuit diagram400 micro farad capacitor PDF

    AD8036

    Abstract: AD8037 AD8036AN AD8036AR AD8036AR-REEL AD8036AR-REEL7
    Contextual Info: FEATURES Superb Clamping Characteristics 3 mV Clamp Error 1.5 ns Overdrive Recovery Minimized Nonlinear Clamping Region 240 MHz Clamp Input Bandwidth ؎3.9 V Clamp Input Range Wide Bandwidth AD8036 AD8037 Small Signal 240 MHz 270 MHz Large Signal 4 V p-p 195 MHz 190 MHz


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    ad8036ad8037ad8036anad8036ar+2ad8036ar-reelad8036ar-reel7 PDF

    Contextual Info: Vishay Telefunken v is h a y Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539


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    bzt03c100ns01-apr-99-apr-99 PDF

    BAT54CLT1G

    Abstract: BAT54CLT3G
    Contextual Info: BAT54CLT1G Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bat54clt1gbat54clt1/dbat54clt3g PDF

    Contextual Info: BZW03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9588 Voltage regulators and transient suppression circuits


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    bzw03c01-apr-99 PDF

    AND8308

    Contextual Info: MSQA6V1W5T2G, SZMSQA6V1W5T2G Quad Array for ESD Protection ESD Protection Diodes with Low Clamping Voltage http://onsemi.com This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is


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    sc-88a/sot-323sc-88aand8308 PDF

    SBAT54CWT1G

    Contextual Info: BAT54CWT1G, SBAT54CWT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bat54cwt1gsbat54cwt1got-323bat54cwt1/d PDF

    BAT54RLT1

    Contextual Info: Schottky Barrier Diodes BAT54RLT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent


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    bat54rlt1236ab PDF

    85603

    Contextual Info: BZW03D. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping sealed package Applications Voltage regulators and transient suppression circuits Absolute Maximum Ratings


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    bzw03d100ns01-apr-99rthjas70+185603 PDF

    Contextual Info: BAT54CTT1G, SBAT54CTT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bat54ctt1gsbat54ctt1gsc-75463licable+1bat54ctt1/d PDF

    SBAT54SLT1G

    Abstract: BAT54SLT1G
    Contextual Info: BAT54SLT1G, SBAT54SLT1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bat54slt1gsbat54slt1got-23318licable+1bat54slt1/d PDF

    Contextual Info: BZW03C. VISHAY ▼ Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits


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    bzw03c01-apr-apr-99 PDF

    BAT54SLT1

    Abstract: BAT54SLT1G LD3 SOT-23
    Contextual Info: BAT54SLT1 Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    bat54slt1bat54slt1/dbat54slt1gld3 sot-23 PDF

    Transient Voltage Suppressors

    Contextual Info: KS05J4 VOLTAGE: 5.0 V Elektronische Bauelemente 100 W Transient Voltage Suppressors Diode RoHS Compliant Product DESCRIPTION SOT-353 . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.


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    ks05j4ot-35324-aug-2007transient voltage suppressors PDF

    SDB310WMF

    Contextual Info: SDB310WMF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    sdb310wmfot-23f25-aug-10ksd-d5c042-001 PDF

    SDB3101

    Contextual Info: SDB3101 SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    sdb3101ot-2325-aug-10ksd-d5c039-001 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Diodes CESD5V0K5 ESD Protection Diode SOT-363 DESCRIPTION The CESD5V0K5 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,


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    ot-363iec61000 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes CESD12VD5 SOD-523 ESD Protection Diode DESCRIPTION The CESD12VD5 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,


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    od-523cesd12vd5iec61000 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes CESDB5V0D3 ESD Protection Diode SOD-323 DESCRIPTION The CESDB5V0D3 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,


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    od-323iec61000 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes CESD12VCP ESD Protection Diodes SOT–23 DESCRIPTION The CESD12VCP is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage,


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    ot-23cesd12vcpiec61000 PDF

    transistor marking ld3

    Abstract: marking ld3 LD3 SOT-23 transistor LD3 BAT54RSLT1 BAT54S marking BAT54S
    Contextual Info: Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent


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    bat54rslt1236abbat54stransistor marking ld3+4marking ld3ld3 sot-23transistor ld3marking bat54s PDF