CLA50 Search Results

CLA50E1200HB

Abstract: CLA50E 2.5/EQUIVALENT OF CLA50E1200HB
Contextual Info: CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

EQUIVALENT OF CLA50E1200HB

Abstract: 2.5/EQUIVALENT OF CLA50E1200HB cla50E1200hb
Contextual Info: CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

CLA50E1200HB

Abstract: EQUIVALENT OF CLA50E1200HB CLA50E1200 2.5/EQUIVALENT OF CLA50E1200HB
Contextual Info: CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: CLA50E1200TC High Efficiency Thyristor T = Single Thyristor Part number Backside: anode 2 1 3 Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability IXYS reserves the right to change limits, conditions and dimensions.

CLA50E1200TC

Contextual Info: CLA50E1200TC High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200TC Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Thyristor for line frequency ● Planar passivated chip

Contextual Info: ^ Semiconductors _ CLA5000 series MICROGATE-C CLA5000 SERIES Microgate-C is a semi-custom design technique for the production of high density, high performance gate arrays on Plessey S em iconductors 2-m icron Isoplanar CMOS process. The CLA5000 range of gate arrays offers ideal single chip

CLA50E1200HB

Abstract: CLA50E1200TC EQUIVALENT OF CLA50E1200HB
Contextual Info: CLA50E1200HB High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200HB Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

A202I

Abstract: CLA5000 2A20 3-input xnor cla52 plessey application note an 112 202A2I CI 3060 elsys CLA5000 Series 2A202I
Contextual Info: CLA5000 series Sem iconductors MICROGATE-C CLA5000 SERIES M icro gate -C is a sem i-custom design tech niq ue fo r the pro d u ctio n o f high density, high perform ance gate arrays on P lessey S e m ic o n d u c to rs 2 -m ic ro n Is o p la n a r C M O S

CLA50E1200HB

Contextual Info: CLA50E1200HB High Efficiency Thyristor T = Single Thyristor Part number Backside: anode 2 1 3 Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability IXYS reserves the right to change limits, conditions and dimensions.

D3PAK

Abstract: EQUIVALENT OF CLA50E1200HB IXYS M2000-200 thyristor CLA50E1200HB
Contextual Info: CLA50E1200TC High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200TC Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Thyristor for line frequency ● Planar passivated chip

EQUIVALENT OF CLA50E1200HB

Abstract: CLA50E1200HB
Contextual Info: CLA50E1200TC High Efficiency Thyristor VRRM = 1200 V I TAV = 50 A VT = 1.27 V Single Thyristor Part number CLA50E1200TC Backside: anode 2 1 3 Features / Advantages: Applications: Package: TO-268AA D3Pak ● Thyristor for line frequency ● Planar passivated chip

C-CUBE CL450

Abstract: CL9100
Contextual Info: C L 4 5 0 MPEG V id e o D e c o d e r U s e r’s M a n u a l % C-Cube Microsystems • IVbM EbT 00DQ4Ô0 flbE ■ C-Cube Microsystems reserves the right to change any products described herein at any time and without notice. C-Cube Microsystems assumes no responsibility or liability arising from the use of the prod­

CLA50E1200HB

Abstract: CLA50E1200 low voltage scr ixys scr CLA50E1200TC CLA50E CLA 80 E 1200 THYRISTOR 1200 C 106 F scr
Contextual Info: CLA 50 E 1200 TC advanced V RRM = I T RMS = I T(AV)M = Low Voltage SCR Single Thyristor 1200 V 79 A 50 A Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

3027a

Abstract: CLA5004 LA5000 LA5002 LA5003 LA5004 LA5005 LA5006 LA5008 LA5009
Contextual Info: I SANYO S E M I C O N D U C T O R CORP 12E D I 7 IT?Q7t, □.□D351fl 2 T sS-1/13 LA 5000 S e r ie s 3027A M o n o lit h ic L in e a r 1C • L o w - Saturati o n \ r 1 - ■ voi t ag e . r e g u l a t o r The LA5002, 5003» 5004, 5005, 5006, 5008, 5009, 5010 are voltage regulators

24 volt dc to 110 volt ac inverter schematic

Abstract: O2-A2 CLA62 MVA500
Contextual Info: CLA60000 Series Channel less CMOS Gate Arrays This new family of gate arrays uses many innovative techniques to achieve 110K gates per chip with system clock speeds of up to 70MHz. The combination of high speed, high gate complexity and low power operation places Mitel Semiconductor at

Contextual Info: PLESSIEY SEMICONDUCTORS Appendix 7 ; CLA60000 SERIES CHANNELLESS CMOS GATE ARRAYS Supersedes December 1988 Edition This advanced family o f gate arrays uses many innovative techniques to achieve 110K gates pa r ch'p - system clock speeds in excess o f 70MHz are achievable. The combinatbn

CLA60000

Abstract: zarlink cla5000 CLA5000 16-LINE TO 4-LINE PRIORITY ENCODERS 4 bit binary multiplier CLA5000 Series Zarlink gate array RAD32D MVA50
Contextual Info: CLA60000 Series Channel less CMOS Gate Arrays This new family of gate arrays uses many innovative techniques to achieve 110K gates per chip with system clock speeds of up to 70MHz. The combination of high speed, high gate complexity and low power operation places Zarlink Semiconductor

THYRISTOR 1200

Abstract: CLA50E1200HB 132 gd 120 CLA50E1200 CLA50E1200TC a dsm gate no cla50e
Contextual Info: CLA 50 E 1200 TC V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 TC 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

CLA50E1200HB

Abstract: CLA50E1200 cla50e CLA50E1200TC CLA 80 E 1200 cla50 1200hb 1200v scr EQUIVALENT OF CLA50E1200HB igd 515
Contextual Info: CLA 50 E 1200 HB advanced V RRM = I T RMS = I T(AV)M = Medium SCR Single Thyristor 1200 V 79 A 50 A Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

O2-A2

Abstract: CLA60000 16-LINE TO 4-LINE PRIORITY ENCODERS DRF4T101 4 bit binary multiplier Gray to BCD converter CLA5000 J K flip-flop CLA64 design octal counter using j-k flipflop
Contextual Info: CLA60000 Series Channel less CMOS Gate Arrays This new family of gate arrays uses many innovative techniques to achieve 110K gates per chip with system clock speeds of up to 70MHz. The combination of high speed, high gate complexity and low power operation places Zarlink Semiconductor

LA5005H

Abstract: LA5009M 1415c 5009m 3032B-M8IC
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D | 7C5C17Q7fei 0003554 LA5000M Series s.T 3032B -i • 'rJ- —V V. ■ M o n o lith ic Linear 1C L o w -S a tu ra tio n - V o lta g e < 1415C R e g u la to r The LA5002M, 5003M, 5004M, 5005M, 5006M, 5008M, 50Q9M, 5010M are voltage regula­

CLA50E1200HB

Abstract: CLA50E1200 marking HB diode CLA50E1200TC thyristor AT 505 S 12
Contextual Info: CLA 50 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

CLA50E1200

Abstract: CLA50E1200HB 548 thyristor B4CD1 cla50
Contextual Info: CLA 50 E 1200 HB V RRM = I T AV M = I T(RMS) = High Efficiency Thyristor Single Thyristor 1200 V 50 A 79 A Part number 2 CLA 50 E 1200 HB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip