CKE2 Search Results

Contextual Info: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

A 3760 0549

Abstract: 0835 0771 4188 1107
Contextual Info: MIL-C-39014/2 Pin DIP HOW TO O R D E R Military Type Designation: Styles CKR22, CKR23, CKR24 Dash Number Option MIL-C-39014/22 Appropriate Dash Number Part No. Example CKR22 BX K 104 R S tyle. Voltage-Temperature Limits _ Note 1 = Leads centered within ±.005*

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

lmc6762

Abstract: intel core i5 650 processor st 2n2222a 82371AB 82443BX 245417 intel mobile pentium III 600 650 mhz MD22 equivalent mmc-1 celeron MMC-2
Contextual Info: Celeron Processor Mobile Module: Mobile Module Connector 2 MMC-2 at 700 MHz, 650 MHz, 600 MHz, 550 MHz, 500 MHz, and 450 MHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ Mobile Celeron processor with processor speeds of 700 MHz, 650 MHz, 600 MHz,

DPDD192MX8XSBY5

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1

FW82443MX100

Abstract: Q728 440MX intel pciset 82443MX AC97 intel DOC PIIX4E 31X24
Contextual Info: R Intel 82443MX PCIset Specification Update April 2001 Notice: The Intel® 82443MX PCIset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.

H8/3005

Abstract: HD6413004F HD6413004TE HD6413004VF HD6413004VTE HD6413005F HD6413005VF OMC952723089
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

hd6417604sf28

Abstract: GE SCR Manual circut diagram of power supply of computer Hitachi Stacked CSP Hitachi Stacked CSP memory MAS 10 RCD SCR bt 107 SH7604 SH7000 HD6417604SVF20
Contextual Info: SH7604 Hardware Manual ADE-602-085C Rev. 4.0 9/19/01 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

82443BX

Abstract: 443BX 82371EB PIIX4E HA21C
Contextual Info: Intel 440BX AGPset: 82443BX Host Bridge/Controller Datasheet April 1998 Order Number: 290633-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability

Contextual Info: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count

Contextual Info:  35 /,0,1$5<,1 250$7,21 /'*%* *E''56'5$0,QWHJUDWHG0RGXOH ,02' %HQHILWV )($785(6 ''56'5$0'DWD5DWH  DQG0ESV  3DFNDJH  xPP[PP(QFDSVXODWHG %DOO*ULGDUUD\ 3%*$ EDOOV PPSLWFK 9”9&RUH3RZHUVXSSO\

motherboard intel schematics diagram

Abstract: 440BX 443ZX INTEL application notes INTEL MOTHERBOARD SCHEMATICS 440BX PCIset 443BX Intel 243735 440ZX-66 AGPset
Contextual Info: Migrating from a 440ZX-66 AGPset to a 440BX AGPset in a Celeron Processor Design Application Note July 1999 Order Number: 273259-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

HD6433837D

Abstract: HD6473837F HD6473837FI HD6433832SD HD6433835 HD6433836 HD6433837 HF751 HD6433837SE HD6473834F
Contextual Info: H8/3834 Series H8/3837 HD6433837, HD6433837S, HD64473837 H8/3836 HD6433836, HD6433836S H8/3835 HD6433835, HD6433835S H8/3834 HD6433834, HD6433834S, HD6473834 H8/3833 HD6433833, HD6433833S H8/3832 HD6433832S Hardware Manual ADE-602-054D Rev. 5.0 9/24/97 Hitachi, Ltd.

W3E16M72S-XBX

Abstract: W3E32M72S-XBX
Contextual Info: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply

3VF1

Abstract: 82443ZX PMB 3330 PMB 8815 intel AF 82801
Contextual Info: intei Intel 440ZX AGPset: 82443ZX Host Bridge/Controller Datasheet November 1998 Order Number: 290650-001 intei Inform ation in this docum ent is provided in connection w ith Intel products. No license, express o r im plied, by estoppel or otherwise, to a ny intellectual

Contextual Info: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp

Contextual Info: 97SD3248 1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks Logic Diagram One Amplifier Memory FEATURES: DESCRIPTION: • 1.5 Giggabit ( 8-Meg X 48-Bit X 4-Banks) • RAD-PAK radiation-hardened against natural space radiation • Total Dose Hardness: >100 krad (Si), depending upon space mission

WEDPNF8M722V-XBX

Contextual Info: White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm

DDR3 LRDIMM

Abstract: MT72JSZS4G72LZ-1G9 MT72JSZS4G72LZ-1G9E2A7 DDR3 DIMM SPD LRDIMM LRDIMM TSE-200
Contextual Info: 32GB x72, ECC, QR 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) isolates DRAM interface from card edge

Contextual Info: White Electronic Designs WEDPN16M72V-XBX 16Mx72 Synchronous DRAM FEATURES The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of

AX12

Contextual Info: 97SD3232 1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks Logic Diagram One Amplifier Memory FEATURES: DESCRIPTION: • 1 Gigabit ( 8-Meg X 32-Bit X 4-Banks) • RAD-PAK radiation-hardened against natural space radiation • Total Dose Hardness: >100 krad (Si), depending upon space mission

97SD3240

Abstract: AX12
Contextual Info: 97SD3240 1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks Logic Diagram One Amplifier Memory FEATURES: DESCRIPTION: • 1.25 Gigabit ( 8-Meg X 40-Bit X 4-Banks) • RAD-PAK radiation-hardened against natural space radiation • Total Dose Hardness: >100 krad (Si), depending upon space mission

W3E64M72S-XBX

Contextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply