CJ2101 Search Results

CJ2101 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CJ2101		JCET Group	P-Channel MOSFET in SOT-323 package with -20V drain-source voltage, -1.4A continuous drain current, and low on-resistance of 100mΩ at -4.5V gate-source voltage, suitable for battery-powered applications.	Original	PDF

CJ2101 Price and Stock

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ZP Semiconductor


ZP Semiconductor CJ2101 SOT-323 Plastic-Encapsulate MOSFETS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	CJ2101		102,000			1 - 10 - 100 - 1000 $0.06 10000 $0.04	Buy Now

CJ2101 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V D-S MOSFET SOT-323 FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN 3 1 2 APPLICATIONS z High Side Load Switch	Original	OT-323 CJ2101 OT-323	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V D-S MOSFET SOT-323 FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN 3 1 2 APPLICATIONS z High Side Load Switch	Original	OT-323 CJ2101 OT-323	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS SOT-323 CJ2101 P-Channel 8-V D-S MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z High Side Load Switch	Original	OT-323 OT-323 CJ2101	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS SOT-323 CJ2101 P-Channel MOSFET FEATURE Leading Trench Technology for Low RDS on Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z High Side Load Switch	Original	OT-323 OT-323 CJ2101	PDF