CJ2101 Search Results
CJ2101 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V D-S MOSFET SOT-323 FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN 3 1 2 APPLICATIONS z High Side Load Switch |
Original |
ot-323cj2101 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel 8-V D-S MOSFET SOT-323 FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN 3 1 2 APPLICATIONS z High Side Load Switch |
Original |
ot-323cj2101 | |
|
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS SOT-323 CJ2101 P-Channel 8-V D-S MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z High Side Load Switch |
Original |
ot-323cj2101 | |
|
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS SOT-323 CJ2101 P-Channel MOSFET FEATURE Leading Trench Technology for Low RDS on Extending Battery Life 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS z High Side Load Switch |
Original |
ot-323cj2101 |