CJ 53B Search Results

5 CW P9

Contextual Info: 75-.5C :8;80@A>4 7867 =<C4> >490D 5IFSTQIR U dbp EI;F5:;@9 53B34;>;FK U f=/ 6;7>75FD;5 EFD7@9F: \47FI77@ 5A;> 3@6 5A@F35FE] U {77F;@9 /st bibb^ bhec D7;@8AD57 ;@EG>3F;A@ U c uAD? p^ c uAD? q 3@6 c uAD? r 5A@8;9GD3F;A@E U ,A5=7FE 3H3;>34>7 U ~>3EF;5 E73>76 3@6 6GEF BDAF75F76 FKB7E 3H3;>34>7

RQ3F

Abstract: a56 transistor cbb9 68a diode diode 68A 91AB A13A BDAA876 rq-3f RE53
Contextual Info: 86/.6 \x*1_hdt] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR V dbo EI;F5:;@9 53B34;>;FK t;>7 |A`lsceefjc V g=/ 6;7>75FD;5 EFD7@9F: \47FI77@ 5A;> 3@6 5A@F35FE] V cb=/ ;?BG>E7 I;F:EF3@6 HA>F397 \47FI77@ 5A;> 3@6 5A@F35FE] t;>7 |A`l+kkefbjk V 5D77B397 6;EF3@57l j? V ~qp [ *q >3KAGFE 3H3;>34>7

Contextual Info: • 0017MÔ1 53b ■ MITSUBISHI RF POWER MODULE M67799HA , h<va>« 8CL,.r.i '0 pH tU su»'e‘ N“1”16' „rail*1' v‘ 450-470MHZ, 9.6V, 7.5W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm PIN : P in : RF INPUT VG G : GATE BIAS SUPPLY ® V D D : DRAIN BIAS SUPPLY

Contextual Info: • m m Chatnrorth, CA m Micmsemi P rog ress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 3 Amp Glass Passivated Super Fast Recovery Rectifier 50 to 1000 Volts Features • • • • • High Surge Capability

CJ 53B

Abstract: O26U E-986 LM3413
Contextual Info: !"##$%&%' !*)% !!"#$%&'()%*&+ +,+$%&%'()! ,-$./0"+.$&'1/2)3).*4/5666 7+"0$&)./0"+.$&'/1/ (-%.(-/)(*01234x ×4(*5674#89:+;<4=:+4>4!:,?4@:A"4+B#"4?8@" #",<=;@?;B9 ,-"/ ;!;:8<8=>66?/ $./ @/ >A8B>AC6>DE&+(/ ×/ >DF$*/ (G'@#$%/ H2;/ I@F+$%@*"(/ $'/ JK$L./ .$M$%&'D3@*"

KV1260

Abstract: KV1320 KV1260-2 KV1310 KV1250M KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3
Contextual Info: 192 - B % ft ft * S ft £ P Vr m Vr mW (V) (V) min 430 30 445 22.5 445 20. 5 445 22. 5 428 20 428 20 428 20 428 20 428 20 620 30 40. 59 26. 25 19. 12 16 40. 59 26. 25 19. 12 16 41. 4 26. 25 19. 12 16 41. 4 26. 25 19.12 16 41. 33 26. 49 19. 24 16. 05 39. 79

KV1310

Abstract: KV1260-2 KV1320 KV1250M KV1260 KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3
Contextual Info: 192 - B % ft ft * S ft £ P Vr m Vr mW (V) (V) min 430 30 445 22.5 445 20. 5 445 22. 5 428 20 428 20 428 20 428 20 428 20 620 30 40. 59 26. 25 19. 12 16 40. 59 26. 25 19. 12 16 41. 4 26. 25 19. 12 16 41. 4 26. 25 19.12 16 41. 33 26. 49 19. 24 16. 05 39. 79

VK 27 CT

Abstract: KV1320 KV1250M KV1260 KV1260-2 KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3
Contextual Info: 192 - ft * S ft B % ft £ P Vr m Vr mW (V) (V) min 430 30 445 22.5 445 20. 5 445 22. 5 428 20 428 20 428 20 428 20 428 20 620 30 40. 59 26. 25 19. 12 16 40. 59 26. 25 19. 12 16 41. 4 26. 25 19. 12 16 41. 4 26. 25 19.12 16 41. 33 26. 49 19. 24 16. 05 39. 79

J113A

Abstract: KV1310 KV1250M KV1260 KV1260-2 KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3
Contextual Info: 192 - ft * S ft B % ft £ P Vr m Vr mW (V) (V) min 430 30 445 22.5 445 20. 5 445 22. 5 428 20 428 20 428 20 428 20 428 20 620 30 40. 59 26. 25 19. 12 16 40. 59 26. 25 19. 12 16 41. 4 26. 25 19. 12 16 41. 4 26. 25 19.12 16 41. 33 26. 49 19. 24 16. 05 39. 79

KV1320

Abstract: KV1260 KV1260-2 KV1250M KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3 KV1296M
Contextual Info: 192 - ft * S ft B % ft £ P Vr m Vr mW (V) (V) min 430 30 445 22.5 445 20. 5 445 22. 5 428 20 428 20 428 20 428 20 428 20 620 30 40. 59 26. 25 19. 12 16 40. 59 26. 25 19. 12 16 41. 4 26. 25 19. 12 16 41. 4 26. 25 19.12 16 41. 33 26. 49 19. 24 16. 05 39. 79

high voltage diodes 24kv

Abstract: ESJA56-24A
Contextual Info: Thli m eletiel And lh* lolorm iitko*! herein !• Hie prupoily o l Fuji Electric Co.Lid. They ahnll be «either reproduced, copied, l« n tt or dUcloee-tf In any way w hnU oevtr lor Uie tme ol m ty third perly nor u*«tf lor Ihe menutnclurlng ptirpo*«» w ith ou t

CJ 53B

Contextual Info: TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT INTEGRATED TOSHIBA CIRCUIT TECHNICAL TC74LVQ174F, TC74LVQ174FN TC74LVQ174FS DATA SILICON MONOLITHIC HEX D-TYPE FLIP FLOP WITH CLEAR The TC74LVQ174 is a high speed CMOS HEX D-FLIP FLOP fabricated with silicon gate and double-layer metal

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)

Contextual Info: EPSON SCI7630M/C Series Switching Regulator # Step-up Switching Regulator 1.5V -» 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V # L o w Operating Voltage (Min 0.9V) # Voltage Detecting function, Battery Back-up function (SCI7631M) • DESCRIPTION

HCJ crystal

Abstract: crystal HCJ NEOREC46HF crystal hcj 30 NEOREC45SH motor 42SH HCJ 33.33 crystal HCJ 33.33 M koe sheet optical pickup unit
Contextual Info: Neodymium-Iron-Boron Magnets NEOREC series Issue date: May 2010 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific

idt29FCT52

Abstract: CJ 53B
Contextual Info: INTEGRATE» DEVICE Integrated Device Technology, Inc. SflE D 40 257 71 FAST CMOS OCTAL REGISTERED TRANSCEIVERS [m0b25 733 M X D T IDT29FCT52A/B/C IDT29FCT53A/B/C " T S 2 .-3 0 -0 2 FEATURES: DESCRIPTION: • Equivalent to AMD's Am2952/53 and National's 29F52/53 in pinout/function

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

Contextual Info: {Z T SGSTHOM SON TDA2005 [ * iE Q iE J ( g ¥ ( Q ) i[ ]( g S 20W BRIDGE AMPLIFIER FOR CAR RADIO High output power :P o = 10 + 10W @ Rl = 2Q, d = 10% ; Po = 20W@Rl = 4£2 , d = 1 %. High reliability of the chip and package with addi­ tional complete safety during operation thanks to

mc 4011

Abstract: MIL-S-19500 1N6304 1N6305 1N6306 DO-203AB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be cotrpleted by 30 September 1994 INCH-POUND MIL-S-19500/550A 30 June 1994 SUPERSEDING MIL-S-19500/550 USAF 21 Dec enter 1981 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DI00E, SILICON, FAST-RECOVERY, HIGH CURRENT

qml-38535

Abstract: CDFP4-F16 HCTS191
Contextual Info: R EVISIO N S LTR D ATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET 15 16 17 REV S TA TU S OF SHEETS 18 19 REV SHEET PM IC N /A STA N D A R D M IC R O C IR C U IT D R A W IN G T H IS D R A W IN G IS A VA ILA B LE FOR USE BY ALL D EP A R TM E N TS A N D A G EN C IE S OF THE

Contextual Info: SED1630 CMOS DOT MA TRIX HIGH DUTY LCD COMMON DRIVER S-MOS Systems, Inc. October, 1996 Version 1.0 Prelim inary S-MOS Systems, Inc. • 150 River Oaks Parkway* San Jose, CA 95134*Tel: (408) 922-0200* Fax: (408) 922-0238 • 0D D4731 Ifll ■ THIS PAGE INTENTIONALLY BLANK

E86015

Abstract: E86015 LR-38486 C3-A30/24VDC RELECO C3-A30 FX 24 VDC LR38486 C3-A30FX vde 0435 c250 delay on timer vde 0435 c250 Releco C3-A3 C3-A30, RELECO
Contextual Info: b ^ e O i- S Ô U 9S 0 -a iA I s A e ia y ^ . M o |B i4 s n p u | a aJ - L 'L - \c l 6 Releco Industrial Relays Plug In Relays • Octal and 11 -pin plug-in • 2 and 3 pole Sensitive Relays • 1, 2 and 3 pole • 250, 500 and 800 mW coil Magnetic Latching Relays

PLCD 190 P1

Abstract: CTR02 CX27440 CX28333 CX28364 CX28365 CX28366 DS3-M13 M28335 CT-R-06
Contextual Info: Preliminary Information This document contains information on a new product. The parametric information, although not fully characterized, is the result of testing initial devices. CX28365/6/4 x12, x6, x4 T3/E3 Framer and ATM Cell Transmission Convergence Sublayer

PLCD 190 P1

Abstract: CX27440 CX28333 CX28364 CX28365 CX28366 DS3-M13 cx2839 1000-port CT-R-06
Contextual Info: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. CX28365/CX28366/CX28364 x12, x6, x4 T3/E3 Framer and ATM Cell Transmission Convergence Sublayer