CITE ELECTRONICS Search Results

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A

Contextual Info: AC/DC Plug & Play Power Supply Series 400W-1200W Standard cite AC/DC Power Supply patents pending Ultra-high efficiency 1U size The Xcite family of power supplies provides up to an incredible 1200W in an extremely compact 1U x 260 x 127mm package. Boasting industry leading power

400w power supply

Contextual Info: AC/DC Plug & Play Power Supply Series 400W-1200W Standard cite AC/DC Power Supply patents pending Ultra-high efficiency 1U size The Xcite family of power supplies provides up to an incredible 1200W in an extremely compact 1U x 260 x 127mm package. Boasting industry leading power

XCE 145

Abstract: LIMIT SWITCH XCE 145 FH-832-X HRC Fuse 250V 20A Z165 XG1 connector E181875
Contextual Info: XGen_XCE 1450W ACDC power supply.qxd 19/01/2010 20:06 Page 1 AC/DC Plug & Play Power Supply Series 1340W Standard cite XCE AC/DC Power Supply patents pending Ultra-high efficiency 1U size The XCE addition to the Xgen family of power supplies provides up to an

CITE Electronics

Abstract: bj39 150055 j 437
Contextual Info: RED INDICATES OR]GUM. DWG SIZE B DASH ND -1 -2 -3 -4 “ 5 -6 CONN TYPE PL30 CJ30 BJ39 PL330 CJ330 BJ339 ASSEMBLE FIG MATERIAL^ PER 2-000B-55 1A 2-0020-55 2A 2-0006-55 3A TAI-121 2-002B-55 IB 2-0027-55 2B 3B 2-0026-55 FIG rxu DATA CONTAINED IN THIS DOCUMENT IS

P50100506618

Contextual Info: 3 0 G44 - C a p a c i t é : 4 FI et FE sur languette laiton Clip laiton et bronze l cre F 1< 53N 13N <1e r e FL< 44N &eme FE> 9N Clip acier l ere F 1< 30N I 0 <me FE> 8N 1€f eFE > 30N S E C T IO N A COUPE A A „,taz SECTION Z i BB CC maxi. DD SECTION to,e.

DHT11

Abstract: DHT-11 Am2303
Contextual Info: Aosong Guangzhou Electronics Co.,Ltd -Tell: +86-020-36380552, +86-020-36042809 Fax: +86-020-36380562 http://www.aosong.com Email: thomasliu198518@yahoo.com.cn sales@aosong.com

diode a jonction

Abstract: S3060
Contextual Info: S G S-THÔP1S0N 7ÔC D | 7c12,î237 QQ07SaS BAT 29, GI SCHOTTKY SMALL SIGNAL DIODES DIODES DE SIGNAL SCHOTTKY | ToS’Qfa „ 5 V without suffix V r r m max = 10 V with suffix G . Vf max g> 10 mA — 550 mV Qs max @ 10 mA = 3 pC F max @ 1 GHz = 7 dB C max @ 0 V = 1 pF

U420

Contextual Info: IRFR/U420A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A M a x @ VDS= 500V

SSH7N90A

Contextual Info: Advanced SSH7N90A Power MOSFET FEATURES BVDSS - 900 V 1.8 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V

U2N60

Abstract: *c1251c
Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■

SSH8N80A

Contextual Info: SSH8N80A Power MOSFET FEATURES - 800 V ^D S o n = 1.5 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: Advanced SSH4N90AS Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V H Low Rds(0n) ■ 3.054 £1 (Typ.)

Contextual Info: SSH9N90A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V H Low Rds(0n) ■ 0.938 £1 (Typ.)

OA 161 diode

Abstract: SSH10N90A
Contextual Info: Advanced SSH10N90A Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V

SSH5N80A

Contextual Info: SSH5N80A A d v a n c e d Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 800V ■ Low RDS(ON) : 1.824 £1 (Typ.)

SSH6N70A

Contextual Info: Advanced SSH6N70A Power MOSFET FEATURES B^D SS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 700V H Low Rds(0n) ■ "I -552 £1 (Typ.)

SSH4N80AS

Abstract: DIODE 19 9
Contextual Info: SSH4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■

SSH5N90A

Contextual Info: SSH5N90A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V H Low Rds(0n) ■ 2.300 £1 (Typ.) 900 V

SSU2N80A

Contextual Info: SSU2N80A A d v a n c e d Power MOSFET FEATURES BVDSS - 800 V 6.0 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

ssh6n90

Abstract: SSH6N90A
Contextual Info: Advanced SSH6N90A Power MOSFET FEATURES - 900 V ^ D S o n = 2 . 3 Q. B V DSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.)

Contextual Info: SSH9N80A FEATURES - 800 V ^ D S o n = 1.3 Q. Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge o ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V

Contextual Info: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

SCITEQ Electronics

Abstract: Sciteq dds-1 DDS-1 "FSK modulator" sciteq A659 821573-1
Contextual Info: Waveformer TM DDS-1 FREQUENCY SYNTHESIZER Most DDSs are used to augment either PLL or mix/filter circuitry, and in such applications the DDS-1 is the industry's most powerful digital signal generator. Examples of such architectures appear below. The Waveformer DDS-1 permits fully