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CID150660 Abstract: CID150660B Contextual Info: PRELIMINARY CID150660–Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode IC= 15 A, Zero Recovery Rectifier Features • • • • • • • Tsc TO-220-3 2 Benchmark Efficiency for Motor Control Rugged Transient Performance Extremely Low EMI	Original	cid150660 o-220-3 cid150660b	PDF

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CID150660

Abstract: CID150660B
Contextual Info: PRELIMINARY CID150660–Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode IC= 15 A, Zero Recovery Rectifier Features • • • • • • • Tsc TO-220-3 2 Benchmark Efficiency for Motor Control Rugged Transient Performance Extremely Low EMI

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cid150660 o-220-3 cid150660b

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