CI SEM 2004 Search Results

Contextual Info: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time

40102B

Abstract: 40103B
Contextual Info: S G S-THOMSON D7C D I 7 ^ 2 3 7 DOlSObS 0 I C u s / m u s n ir m if ° ^ u IK u U 11o - • K K f S > ’ aj 7929225 S G S SE MI C O N D U C T OR C O R P 8-STAGE PR ESET T A BLE SYNCHRONOUS DOWN COUNTERS 40102B 2-DECADE BCD TYPE 40103B 8-BIT BIN A R Y TYPE

Sharp Semiconductor Lasers

Abstract: AU4A transistor QB tensile-strength thermopile array BREAK FAILURE INDICATOR APPLICATIONS LIST relay failure analysis CRACK DETECTION PATTERNS gold wire bound failures due to ultrasonic cleaning 2n2222 micro electronics
Contextual Info: Application Note Optoelectronics Failure Analysis of Optoelectronic Devices DEFINITIONS • US Military Standard: MIL-STD-883 Method 5003 Failure Analysis Procedures for Microcircuits – Failure analysis is a post-mortem examination of a failed device employing, as required, electrical

Contextual Info: Military Program Overview Corporate Philosophy MIL-STD-883 Compliance Lattice Sem iconductor C orporation LSC is com m itted to leadership in device perform ance and quality. O ur fam ily of m ilitary ispLSt, pLSI and G AL devices is a reflection of this philosophy. LSC m anufactures all devices under

transformador

Abstract: potenciometro ajustable 2k TTH300 POTENCIOMETRO 2k NORMAS ATEX PARA CONTROL DE PROCESOS Carimbo SENSOR DE TEMPERATURA transformador electrico ABB12A EC certificate PTB ATEX 1144 X
Contextual Info: CI/TTF350-X1 Inbetriebnahmeanleitung Temperatur-Messumformer für Feldmontage TTF350 Commissioning Instructions Field-mounted temperature transmitters TTF350 Notice de mise en service Convertisseurs de mesure de température pour montage local TTF350 Instrucciones para la puesta en

Contextual Info: ZXM C4A16DN8 COM PLEM ENTARY 40V ENHANCEM ENT M ODE M OSFET SUM M ARY N-Channel = V BR DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V (BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench M OSFETs from Zetex utilises a unique structure that com bines the benefits

70V18

Abstract: A12L A13L A15L A15R IDT70V18 IDT70V18L ci sem 2004
Contextual Info: HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM IDT70V18L Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.)

Contextual Info: ZVP4525G 250V P-CHANNEL ENHANCEM ENT M ODE M OSFET SUM M ARY V BR DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancem ent m ode P-channel M OSFET provides users w ith a com petitive specification offering efficient pow er handling capability, high

DPRAM

Abstract: AN2146 AN1834 CY7C028V DSP56300 MSC8101 SC140 pgpl5
Contextual Info: Freescale Semiconductor Application Note AN2146 Rev. 3, 1/2005 Interfacing the MSC8101 UPM to an External Dual-Port SRAM By Iantha Scheiwe The MSC8101 is a powerful DSP that integrates the StarCore SC140 DSP core, a communications processor module CPM

70V37

Abstract: A14L IDT70V37 IDT70V37L
Contextual Info: HIGH-SPEED 3.3V 32K x 18 DUAL-PORT STATIC RAM IDT70V37L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.)

Contextual Info: HIGH-SPEED 3.3V 32K x 18 DUAL-PORT STATIC RAM IDT70V37L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20ns max. – Industrial: 20ns (max.) Low-power operation

L1220

Abstract: 5L25 A12L A13L IDT70T15
Contextual Info: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation – IDT70T16/5L

J6815

Contextual Info: HIGH-SPEED 3.3V 16/8K X 9 DUAL-PORT STATIC RAM IDT70V16/5S/L Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:15/20/25ns max. – Industrial: 20ns (max.) Low-power operation

Contextual Info: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industral: 25ns (max.) Low-power operation

5L25

Abstract: A12L A13L IDT70T15
Contextual Info: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation

J6815

Abstract: A12L A13L IDT70V15
Contextual Info: HIGH-SPEED 3.3V 16/8K X 9 DUAL-PORT STATIC RAM IDT70V16/5S/L Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:15/20/25ns max. – Industrial: 20ns (max.) Low-power operation

IDT70V27PF

Abstract: BF144-1
Contextual Info: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.) Low-power operation

Contextual Info: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458© Unit in mm AUDIO AM PLIFIER APPLICATIONS LO W NOISE AUDIO AM PLIFIER APPLICATIONS ^ 4.2M AX. . —I High Current Capability Iß = 150mA (Max.) High DC Current Gain hjPE = 70~700

A14L

Abstract: IDT7027 IDT7027L IDT7027S
Contextual Info: HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/25ns (max.) Low-power operation

7L Marking

Abstract: c 3198
Contextual Info: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/55ns (max.) – Military: 25/35/55ns (max.)

A 3198

Abstract: A15L A15R IDT7008 IDT7008L IDT7008S 7008S
Contextual Info: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/55ns (max.) – Military: 25/35/55ns (max.)

28P2W-C

Abstract: M5M5256DFP M5M5256DVP IC SEM 2004
Contextual Info: RENESAS LSIs M5M5256DFP,VP-55LL,-70LL,-70LLI, -55XL,-70XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of

induction cooker schematic diagram

Abstract: schematic diagram induction cooker gas cooker circuit ignitor 4701-306 foundry metals quality MANUALS transistor 1411 tester diagram induction cooker yamaha amplifier a 550 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR GAS COOKER IGNITOR
Contextual Info: '04 Hand Book for QUALITY/RELIABILITY Issue Date: May 11, 2004 INTRODUCTION Thank you for supporting Oki Semiconductor products. To welcome the dawn of a new age of unlimited potential brought about by advances in the global network information revolution, the Oki semiconductor business was launched as a new company, Silicon Solution

Contextual Info: HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 10/12/15ns max.