CI 555 DATA Search Results

I-CUBE

Abstract: 2P034 P001 pb416 PO88 TPA 4863 A18K tq52 P046 P009
Contextual Info: & l •Cube IQ Family Data Sheet Update IQ96, IQ64B, IQ48, IQ32B Features Description • • These additional members in the IQ previously called FPID family are based on 0.6|im CMOS Process. • • • • • 32, 48, 64 and 96 I/O Ports SRAM-based Programming for In-system

BTS555P

Abstract: TO218AB package SIEMENS 3 TB 40 12 - 0A TO-218AB Package TO-218AB siemens 12V small relays SIEMENS 3 TB 40 10 - 0A Smart Highside High Current Power Switch
Contextual Info: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection

Contextual Info: ñ EBSbOS SIEMENS GDTSmS GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection Overvoltage protection including load dump

SIEMENS 3 TB 40 12 - 0A

Abstract: BTS555P BTS555 siemens profet siemens 12V small relays BTS current sense siemens SIEMENS 3 TB 40 10 - 0A
Contextual Info: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection

BTS555P

Abstract: TO218AB package transistor D 659
Contextual Info: SIEMENS PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features Product Summary • • • • • • • • • • • • Overvoltage protection Vbb AZ Operating voltage Vbb(on) On-state resistance Ro n Load current (ISO)

Contextual Info: XICOR INC S E E J> T T 4 1 7 4 3 0 0 0 3 0 4 b Ö6T M X I C Advance Information XM20C64S 64K 8K x 8 High Speed AUTOSTORE NOVRAM FEATURES High Speed: tAA = 55 ns NO! Batteries!! AUTOSTORE™ NOVRAM — Automatically Stores RAM data to E2PROM upon Power-fail Detection

Am29LV002T

Contextual Info: A D V A N C E I N F O R M A T IO N AMDZ1 Am29LV002 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Algorithms ■ Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write

CEC-19

Abstract: X20C16 XM20C128S
Contextual Info: J & Advance Inform ation XM20C128S 128K G B E 16K x 8 High Speed AUTOSTORE NOVRAM FEATURES High Speed: T a a = 55ns NO! Batteries!! Low Power CMOS AUTOSTORE™ NOVRAM — Automatically Stores RAM Data to E2PROM upon Power-fail Detection Open Drain AUTOSTORE Output Pin

LUCENT 277

Abstract: ci 7495 intel FPGA CI LM 555
Contextual Info: Product Brief November 1999 ORCA OR3LxxxB Series Field-Programmable Gate Arrays Features • Abundant hierarchical routing resources based on routing two data nibbles and two control lines per set provide for faster place and route implementations and less routing delay.

125OC

Abstract: 555H
Contextual Info: PMC PRELIMINARY Pm29LV004 4 Megabit 512K X 8 3.0 Volt-Only CMOS Flash Memory FEATURES • Single Power Supply Operation - Standard voltage range: 2.7 V - 3.6 V - Regulated voltage range: 3.0 V - 3.6 V • Hardware Data Protection • High Performance Read - 70 ns access time at regulated voltage range

Pm29F002T-12PC

Abstract: Pm29F002T-12JC 125OC 555H Programmable Microelectronics
Contextual Info: PMC PRELIMINARY Pm29F002 2 Megabit 256K X 8 5 Volt-Only CMOS Flash Memory FEATURES • Data# Polling and Toggle Bit Features • Single Power Supply Operation - 5.0 V ± 10% Read/Program/Erase • Low Power Consumption - Typical 12 mA active read current - Typical 0.1 µA CMOS standby current

125OC

Abstract: 555H
Contextual Info: PMC PRELIMINARY Pm29F004 4 Megabit 512K X 8 5 Volt-Only CMOS Flash Memory FEATURES • Data# Polling and Toggle Bit Features • Single Power Supply Operation - 5.0 V ± 10% Read/Program/Erase • Low Power Consumption - Typical 15 mA active read current - Typical 30 mA program/erase current

M29F512B

Abstract: PLCC32 TSOP32 G13-14 G1314
Contextual Info: M29F512B 512 Kbit 64Kb x8, Bulk Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8ps per Byte typical ■ PROGRAM/ERASE CONTROLLER - Embedded Byte Program algorithm

MEM2009

Abstract: 32-PLCC SST29SF040-55-4C-NHE SST29SF020 SST29SF040 SST29VF020 SST29VF040 A1743 SST29SF020-55-4I-WHE
Contextual Info: 2 Mbit / 4 Mbit x8 Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SST29SF/VF020 / 0402Mb / 4Mb (x8) Byte-Program, Small-Sector flash memories Data Sheet FEATURES: • Organized as 256K x8 / 512K x8 • Single Voltage Read and Write Operations

SST29SF020

Abstract: SST29SF040 SST29VF020 SST29VF040
Contextual Info: 2 Mbit / 4 Mbit x8 Small-Sector Flash SST29SF020 / SST29SF040 SST29VF020 / SST29VF040 SST29SF/VF020 / 0402Mb / 4Mb (x8) Byte-Program, Small-Sector flash memories Data Sheet FEATURES: • Organized as 256K x8 / 512K x8 • Single Voltage Read and Write Operations

HDMP-2501

Abstract: hdmp2501
Contextual Info: mL'KM P A C K A R D W fip l H E W L E T T High Speed Silicon Bipolar 622 Mb/s Serial Data and Clock Recovery Circuit Technical Data HDMP-2501 Features • Single Chip Clock Extraction and Data Retiming • Designed for 622 Mb/s Applications • Easy to Apply, Cost

555H

Abstract: SST34HF162C SST34HF164C
Contextual Info: 16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory SST34HF162C / SST34HF164C SST34HF162C16Mb Dual-Bank Flash + 2/4 Mb SRAM MCP ComboMemory EOL Data Sheet FEATURES: • Flash Organization: 1M x16 – 16 Mbit: 12 Mbit + 4 Mbit • Concurrent Operation – Read from or Write to SRAM while

SST39VF3201B

Abstract: SST39VF3202B 555H SST39VF3202B-70-4I-EKE SST39VF3201B-70-4I-EKE CL1384
Contextual Info: 32 Mbit x16 Multi-Purpose Flash Plus SST39VF3201B / SST39VF3202B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 2M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

Contextual Info: 32 Mbit x16 Multi-Purpose Flash Plus SST39VF3201B / SST39VF3202B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 2M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

SST39VF6401B-70-4C-EKE

Abstract: SST39VF6401B 555H SST39VF6402B SST39VF640xB
Contextual Info: 64 Mbit x16 Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B SST39VF640xB2.7V 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 4M x16 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)

EA 7023

Abstract: ICPROM 8x196 0C00 80C51 MCS51 X88064 V/EA+7023
Contextual Info: APPLICATION NOTE A V A I L A B L E Application Brief iAPX88/188, MCS 196, MCS51 Compatible* X88064 64K 8192 x 8 Bit E2 Microcontroller Peripheral • Block Lock Write Control —Eight 1K Byte Blocks - Lockable Independently or in Combination • Multiplexed Address/Data Bus

555H

Abstract: SST39VF088
Contextual Info: 8 Mbit x8 Multi-Purpose Flash SST39VF088 EOL Data Sheet FEATURES: TE • Fast Erase and Byte-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical)

CI 555 data

Abstract: ATT3000 ci 555 ci 7495 XILINX XC3000 ATT3020
Contextual Info: Product Brief December 1996 ATT3000 Series Field-Programmable Gate Arrays Features • High performance: — Up to 270 MHz toggle rates — 4-input LUT delays <3 ns ■ Flexible array architecture: — 2000 to 9000 gate logic complexity — Extensive register and I/O capabilities

AM29LV400B-120EC

Abstract: 2q514
Contextual Info: î>W R L I M i N A R v AMD il Am29LV400 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications