CI 4026 Search Results

GMM791000S

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E D GoldStar GST WÊ 40267S7 QD03S00 _r - y ^ - 2 3 " / g G M M 7 9 1 0 0 0 S - 6 0 /7 0 /8 0 /1 0 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE Description Features The GMM791000S is 1M x 9 Dynamic RAM Mod­ ule organized as 1,048,576 x 9 bits and consists of

4026B

Abstract: cmos 4026B 4033B 18 pin dual 7-SEGMENT LED DISPLAY 4026B data sheet DIVIDE-BY-60 seven 7-segment Display
Contextual Info: HCC/HCF4026B HCC/HCF4033B DECADE COUNTERS/DIVIDERS WITH DECODED 7-SEGMENT DISPLAY OUTPUTS WITH; DISPLAY ENABLE 4026B RIPPLE BLANKING 4033B . . . . . . . . COUNTER AND 7-SEGMENT DECODING IN ONE PACKAGE EASILY INTERFACED WITH 7-SEGMENT DISPLAY TYPES FULLY STATIC COUNTER OPERATION : DC

01C09

Contextual Info: GoldStar GM23C32000FW 4M x 8/2M x 16BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C32000FW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152x 16 bits (word mode) and has an access time of 120/150 ns. It needs no ex­

rosenberger crimp

Contextual Info: SERIES N 50 Q Series N Serie N Robust coaxial connector Navy Connector screw-lock system for wide­ Koaxial-Steckverbinder (N a vy C onnector) m it Schraubverbindung in robu- spread communications applications, especially for radio equipment with ste r Ausfuhrung fu r breiten Einsatz in der Nachrichten- u nd insbesondere

3.3v to 5v use 34063

Abstract: led driver 34063 iTVC12 sm 34063 sae a14
Contextual Info:
   
         June 2000 2975 Stender Way, Santa Clara, California 95054-3090 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 2000 Integrated Device Technology, Inc.

ic ns 4263

Contextual Info: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various

Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GMM7361000CS/SG is a 1M x 36 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package find 4 pieces of 1M x lbit DRAMs in 20/26 pin SOJ package on both sides the

23C32000

Abstract: 23c3200 M23C32000
Contextual Info: GoldStar GM23C32000 2M x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C 32000 high performance read only memory is organized as 2,097,152 x 16 bits and has an access time of 120/150ns. It needs no external control clock to assure simple operation, because

ci 740

Contextual Info: @ LG Semicon. Co. LTD. Description Fin Configuration 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the mask programmed CE or CE input. The low power feature

Contextual Info: # GM71V16403C GM71VS16403CL LG Semican Go Ltd LA3 o tS fT IIC U n W U .,L ,iU . CMOS DYNAMIC RAM Description Features The GM71V S 16403 C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)16403C/CL has realized higher density, higher performance and

Contextual Info: @ LG Semicon. Co. LTD. Description Fin Configuration The GM23C64050FW high perfonnance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure

Contextual Info: @ LG Semicon. Co. LTD. Description The GM 23C4000B high perform ance read only memory is organized either as 524,288 x 8 bits and has an access time of 100/120/150ns. The GM23C4000B offers automatic power down controlled by the make programmed CE or CE input. The low

NA-1335

Abstract: 42-pin D GM23C8100A
Contextual Info: GM23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)

GM71C17400AJ6

Abstract: GM71C17400AJ7
Contextual Info: @ LG Semicon. Co. LTD. Pin Configuration Description The GM71C17400A is the new generation dynamic RAM organized 4,194,304 x 4 Bit. GM71C17400A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C17400A offers Fast

CI EEPROM 2816

Abstract: 31136 modem 56k sram pcr 4063 12697 scd 9104 SN 104 SCR image top 2556 en CRC10 CRC-10
Contextual Info: IDT77222 Micro SAR User Manual Version 1.0 September 8, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc.

CRC10

Abstract: CRC-10 CRC32 CRC-32 IDT77252 0x2f68 0C003
Contextual Info: IDT77252 ABR SAR User Manual Version 2.0 May 1, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc. Printed U.S.A.

Contextual Info: H A R R IS 1 -1 1 5 8 0 4 S E M I C O N D U C T O R Ê M M 12-Bit, 5 MSPS A/D Converter January 1997 Features Description • 5 MSPS Sampling Rate The HI5804 is a monolithic, 12-bit, Analog-to-Digital Converter fabricated in Harris’ HBC10 BiCMOS process. It is

GM71V18160AT8

Abstract: C12N GM71V18160AJ-8
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V18160A is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71V18160A has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology.

Contextual Info: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by

M7810

Abstract: DNS-80 GM71C4
Contextual Info: LG Semicon. Co. LTD. Description Features The GMM781000DNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000DNS is a socket type memory module, suitable for easy change or addition

71C4400Bj

Contextual Info: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin

GM71C4400BJ

Abstract: GM71C4400 gm71c4400b
Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM781100BNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package. The GMM781100BNS is a socket type memory module, suitable for easy change or addition

of ic 7427

Abstract: PTT50
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM781000CNS is an 1M x 8 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400CJ, 1M x4 sealed in 20 pin SOJ package. The GMM781000CNS is a socket type memory module, suitable for easy change or addition

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is