CI 3060 PT Search Results

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

BM11104

Abstract: QFP80-P-1420-0 TC571000D TMP87PM53F hfcf
Contextual Info: TOSHIBA ^ TMP87PM53 * CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87PM53F 87PM53 fá 256K fcf y h 7 > 9 >f A P R O M £ F*JÍ£ L fc Ü ÏÜ , -7X ^ R O M p p ^ 8 7 C M 5 3 ¿ t? > n > 87CM 53¿ i to ¿ ^ Î H ^ 'M E P R 0 M 7 on y F y n 3 > f- 7;l/ f t o F*IÉS£> P R O M U 7° n ^ 9 A & # § jX fr i

Contextual Info: ¿ 888888888 |p M iwiHBBffi smsssBPe .rfHHHHHHHHMh. m1 itittnnnnn hhhhhhk-. iiHiiftBHhr. Data Sheet No. 2N5415S o % f# 1 l $ 1 I cI ^88888 sdL SEMICONDUCTORS G eneric Part Num ber: 2N5415S Type 2N5415S G eom etry TBD P olarity PNP Q ual Level: Pending REF: M IL-P R F -19 5 0 0 /4 8 5

AN5337 ca3028

Abstract: CA3028 AN5337 transistor hh 004 circuits diagram CA3053E CA3053 CA3028A CA30288 ca3028a equivalent AN5337 equivalent
Contextual Info: ÍSJ h a r r i s U P CA3028A, CA3028B, S E M I C O N D U C T O R Differential/Cascode Amplifiers for Commercial and Industrial Equipment from DC to 120MHz November 1996 Features Description • Controlled for Input Offset Voltage, Input Offset Current and Input Bias Current CA3028 Series Only

3045 PT

Abstract: MBR30150PT CI 3060 elsys 2sc 2026 304S MBR3035PT rfltw
Contextual Info: E MBR3035PT- MBR30150PT TAIWAN SEMICONDUCTOR RoHS [Pb 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TQ-247AD C O M P L IA N C E m Features ❖ P la s tic m a te ria l u s e d ca rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s 94V -Q '> Metal silicon Junction, m ajority c a rrlc r conduct on

MKT .22K 250V X2

Abstract: A66EAK CRT TCL COLOUR TV SCHEMATIC DIAGRAM CRT TCL-2027u COLOUR TV SCHEMATIC DIAGRAM free CRT COLOUR TV SCHEMATIC DIAGRAM schematic diagram crt tv super general CRT - COLOUR TV SCHEMATIC DIAGRAM allen bradley potentiometer type j 1k TDA4870 Philips PR02
Contextual Info: APPLICATION NOTE Application of the TDA6120 wideband video output amplifier AN96073 Philips Semiconductors Philips Semiconductors TDA6120Q Wideband video output amplifier Application Note

Contextual Info: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses

auirgp4066d1

Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e
Contextual Info: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses

Contextual Info: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A

IGBT 4000V ICM 400A

Abstract: IGBT 4000V
Contextual Info: PD - 96410B AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • C VCES = 600V Low VCE ON Trench IGBT Technology Low switching losses IC(Nominal) = 75A

NEC a1009

Abstract: a1009a a1009 2SA1009 CI A1009A nec 2sa1009 2SA1009A 271 0276 009 2sa 945 2SA1009/A
Contextual Info: •?— S 7* 5/ — K y <7 — Silicon P o w e r Tran sistors S 2 P N P = f i? Æ A 1 9 , 1 9 A Ü ^ '> X - f 'y ^ I i f f l 2SA 1009, 2 S A 1 0 0 9 A ü f i ; i * l t K I Î / ± X Ï - y ^ > m t L T S % T O : mm x 4 - v f - > 9" ■ u % zl v 9, D C-D Cn

4Mx4 dram simm

Abstract: FPM DRAM 30-pin SIMM CI 3060 elsys 72 simm function 8m x 36 8m x 36 60ns simm 4Mx4 fpm dram 30 simm
Contextual Info: 8M x 36 Bit 5V ECC FPM SIMM Fast Page Mode FPM DRAM SIMM 368056-S52m18JD 72 Pin 8Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V, ECC Mode Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12

CI 3060 elsys

Abstract: GAL18V10B-15LP 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-7LJ GAL18V10B-7LP
Contextual Info: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs

CI 3060 elsys

Abstract: 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP
Contextual Info: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs

TMP87CM53F

Abstract: QFP80-P-1420-0 TLCS-870 TMP87PM53F TMP87CM53 1J87C
Contextual Info: TOSHIBA TMP87CM53 CMOS 8 b f ' y h V ' f ? n = l > h n - 7 TMP87CM53F A ^ Ä R O M , RAM, A t t i * - h, ^ 9 4 ^ , y 'JT iK ^ 7 x - X ,8 H '7 hA/D n > - 9 , D TM Fv i * !✓ - 9 , * u r 4 & £ Tß23hfäi<n>%m.W&iZ ¥ Z f t M L t z M ì È , Ìb f!t£ 8 fcf y h v > 7 V

18V10

Abstract: GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP gal18v10b-20lp
Contextual Info: Specifications GAL18V10 GAL18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output

18V10

Abstract: LSC 1008 lattice 22v10 programming GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP gal18v10b-20lp
Contextual Info: Specifications GAL18V10 GAL18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output

GAL programmer schematic

Abstract: 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP
Contextual Info: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs

GAL programmer schematic

Abstract: 18V10 GAL 16 v 8 D GAL18V10 GAL18V10B-10LJ GAL18V10B-10LP GAL18V10B-15LP GAL18V10B-7LJ GAL18V10B-7LP
Contextual Info: GAL18V10 High Performance E2CMOS PLD Generic Array Logic Features Functional Block Diagram • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax = 111 MHz — 5.5 ns Maximum from Clock Input to Data Output — TTL Compatible 16 mA Outputs

Lautsprecher LP

Abstract: L3060PB reich L2459 ddr lautsprecher L2155PB gut 2160 Scans-048 KAN SC 3000 DSAGER00027
Contextual Info: A us dem Lautsprechersortim ent d er DDR L a u tsp re c h e r w erd e n in e in e r g ro ß e n Ty­ p e n a n z a h l g e fe rtig t. D ie T a b e lle zeig t e in e A u sw a h l. Sie b e g in n t mit dem Kleinstlautsprecher 121 K. S e in e O b e rtra ­ g u n g sku rve ist g a n z sp eziell a u f d ie V e r­

Contextual Info: TOSHIBA THMY51E01 B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E01B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

D036

Abstract: D018 D019 D032 D051
Contextual Info: T O S H IB A THMY25E01A70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E01A is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.

GAL18V10B-10LP

Abstract: GAL18V10B-15LP GAL18V10B-20LP GAL18V10B-7LP 18V10 GAL18V10 GAL18V10B-10LJ GAL18V10B-15LJ GAL18V10B-20LJ GAL18V10B-7LJ
Contextual Info: GAL 18V10 Device Datasheet September 2010 All Devices Discontinued! Product Change Notifications PCNs have been issued to discontinue all devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes. Please refer to the table below for reference PCN and current product status.

ITT ccu 3000 i

Contextual Info: MICRONAS INTERMETALL DMA 2275, DMA 2286 C/D/D2-MAC Descrambler MICRONAS Edition May 20, 1992 6251-330-1E DMA 2275, DMA 2286 Contents Page Section Title 4 4 4 1. 1.1. 1.2. Introduction General Information Environment 5 2. Chip Architecture 6 6 6 6 6 3. 3.1.