CHN T4 Search Results

chn 442

Abstract: chn 437 chn 439 chn 436 lz smd marking
Contextual Info: MICRON TE CHN OLOGY INC 3.7E- D • blllSMi 0001530 *} MICRON ■ MT5C6408 8830 t|CHt*MCtV MC MILITARY SRAM 8K X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 5962-85525, -89691 • JAN M38510/292 « RAD-tolerant (consult factory)

Contextual Info: Tfi MICRON TE CHN OLOGY INC 6111549 MICRON TECHNOLOGY INC DE^blllSMI 68C 00060 OOQOGtaO T D T-41-55 IICRON TECHNOLOGY, INC. 655,360 Element Solid-State Image Sensor SYSTEMS GROUP 1447 Tyrell Lane Boise, Idaho 83706 208 386-3800 I TWX 910-970-5973 FEATURES

5180A-2

Abstract: "transient capture" cx20116 2N5836 EL2004 HA2539 HA2540 5180A 77100
Contextual Info: @SPT signal môcÊssm^cHNÔœèîÈs FEATURES 150 MSPS Conversion Rate 1/2 LSB Linearity Preamplifier Com parator Design Typical Power Dissipation < 2.2 Watts HADC77 I OO 8 -B IT , 1 5 0 M S P S F L A S H A /D C O N V E R T E R APPLICATIONS Digital Oscilloscopes

CHN 550

Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Contextual Info: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12

chn+335

Contextual Info: 1 Megabit 128K x 8 Multi-Purpose Flash SST39VF010 Preliminary Specifications FEATURES: • • • Organized as 128K X 8 Fast Sector Erase and Byte Program: Single 2.7-3.6V Read and Write Operations - Superior Reliability - • Low Power Consumption: - •

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

CHN 816

Abstract: chn 823 chn 817 ST CHN 510 1300-CSM BT225 CHN 823 diode CHN 510 SLC-500 ST CHN t4
Contextual Info: Print I/O Ink, Damp and Register Modules Catalog Number 1300-GDI, 1300-CCM, 1300-PWM and 1300-CSM Technical Data Typical Print I/O Arrangement Dedicated Purpose and Functionality. Print I/O is a t0WTC0St modular I/O system for specific applications that offer all the functions

CHN 525

Abstract: TRANSISTOR chn 602 SCR PIN CONFIGURATION CHN 035 chn 725 chn 729 chn 038 TRANSISTOR CHN 736 CHN T4 chn 720 chn 728
Contextual Info: 2-Channel, 2.35 V to 5.25 V 1 MSPS, 10-/12-Bit ADCs AD7912/AD7922 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power: 4.8 mW typ at 1 MSPS with 3 V supplies 15.5mW typ at 1 MSPS with 5 V supplies

Contextual Info: 4 Megabit 512K x 8-Bit Multi-Purpose Flash SST39VF040Q Advance Information FEATURES: • Organized as 512 K x 8 • • Single 2.7-3.6V Read and Write Operations • • V • Superior Reliability - • Uniform 4 KByte sectors Block Erase Capability (8 blocks)

ST CHN t4

Abstract: a115 da hi ng sst39vf040
Contextual Info: 4 Megabit 512K x 8 Multi-Purpose Flash SST39VF040 Prelim inary Specifications FEATURES: • Organized as 512K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

Contextual Info: 512 Kilobit 64K x 8 Multi-Purpose Flash SST39VF512 Preliminary Specifications FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 2.7-3.6V Read and Write Operations - Superior Reliability - • Low Power Consumption: - •

CHN 142

Abstract: CHN T4
Contextual Info: 2 Megabit 256K x 8 Multi-Purpose Flash SST39VF020 Preliminary Sp ecifica tions FEATURES: • Organized as 256K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention

Contextual Info: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

CHN 525

Abstract: chn 038 TRANSISTOR chn 734 TRANSISTOR chn 602 CHN 602 CHN 804 chn 728 CHN T4 chn 725 CHN 736
Contextual Info: 2-Channel, 2.35 V to 5.25 V, 1 MSPS, 10-/12-Bit ADCs AD7912/AD7922 FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power: 4.8 mW typ at 1 MSPS with 3 V supplies 15.5mW typ at 1 MSPS with 5 V supplies

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:

Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

oasis

Abstract: SST39VF400 SST39VF400 read code
Contextual Info: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:

CHN 345 X

Contextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

SST39VF400Q

Abstract: 39VF400
Contextual Info: 4 Megabit 256K x 16-Bit Multi-Purpose Flash SST39VF400Q / SST39VF400 A dvance Inform ation FEATURES: • Organized as 256 K X 16 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Word Program: • V ddq

CHN 847

Abstract: chn 734
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption