CHN 741 Search Results

CHN 550

Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Contextual Info: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

Contextual Info: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:

Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

oasis

Abstract: SST39VF400 SST39VF400 read code
Contextual Info: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time:

CHN 345 X

Contextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

chn 347

Contextual Info: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)

D4710

Abstract: M01F E853 M6G DATASHEET z421 A616 K4170 5A6Y
Contextual Info: E= 70D056='*A616*9F)18*?)G,*H I>G)D/)=*+JJH !"#$%&' )*+,-*./01232*&456/7)8*916/070:);8 <)1=>%?)@0>567*AB?*C62)=*&=652D011)=2 • <Y#BY#$B(P&%$3(5.#(%$ ■ 0%"5'3.##&%4&5"-6&$.5BY# S(70P610>52 ■ F&#%(4%&1.(5"6$5&#P(%:'$#($789$:3 ■ \&%I$2&5'&T$P"Q&42.Q.'.(5$3Y6#.B6&O.51$]!S!F^

chn 614

Abstract: D4710 s04999d8e chn 706 z421 A616 Y-625 s 513b
Contextual Info: E= 70D056='*A616*9F)18*?)G,*+ H)/=46='*+II+ !"#$%&' )*+,-*./01232*&456/7)8*916/070:);8 <)1=>%?)@0>567*AB?*C62)=*&=652D011)=2 • <Y#BY#$B(P&%$3(5.#(%$ ■ 0%"5'3.##&%4&5"-6&$.5BY# S(70P610>52 ■ F&#%(4%&1.(5"6$5&#P(%:'$#($789$:3 ■ \&%I$2&5'&T$P"Q&42.Q.'.(5$3Y6#.B6&O.51$]!S!F^

HAI 7203

Abstract: ACT8847 74ACT8847 SN74 multiplier
Contextual Info: TEXAS INSTR LOGIC SSE D 0^1723 GQÖS7G3 7 SN74ACT8847 64-Bit Floating Point Unit • Meets IEEE Standard for Single- and DoublePrecision Formats • Performs Floating Point and Integer Add, Subtract, Multiply, Divide, Square Root, and Compare • 64-Bit IEEE Divide in 11 Cycles, 64-Bit Square

rx1a 1244

Abstract: CHN 616 ice 8040 ADSP-21065L h 945 p 4000 CMOS texas instruments 0x200014 F15-F8 PM48 multi timer Chn 835
Contextual Info: ADSP-21065L SHARC DSP User’s Manual Revision 2.0, July 2003 Part Number 82-001833-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2003 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent

Contextual Info: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:

chn 4558 c

Abstract: chn 4558 sdc 2025 83 fkm 592 PEB 20850 CHN 612 diode PEB2095 2D55 ICL 2025 Siemens IEC MAU
Contextual Info: NOV 2 1 19» j Am2095 C Am2095 ISDN Burst Transceiver Circuit IBC Advanced Micro Devices Data Sheet TM 6/89 /- 11137 C/0 IMI» Dm: This Material Copyrighted By Its Respective Manufacturer July 1990 IBC Technical M anual 6/89 1. Introduction 1.1. Device Overview

ebft

Abstract: chn 701
Contextual Info: PF1266-03 Series S1F81100S1F8100 Series System Power Supply IC y ar n i m i l Pre • DESCRIPTION The S1F81100 is a power supply IC for the system. From the Li-ion/Li-polymer batteries 4 channels of output voltage are generated via external devices. The four channels are independent of each other and can be

Contextual Info: MF1521-03 Power Supply IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

S1F81100F0E1000

Contextual Info: MF1521-03 Power Supply IC S1F81100 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any