CHN 513 Search Results

ST CHN 510

Abstract: 83C97 chn 809 chn 809 ST
Contextual Info: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description

chn 809

Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Contextual Info: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for

Transistor TT 2246

Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Contextual Info: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for

CHN 550

Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Contextual Info: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

CHN 816

Abstract: chn 823 chn 817 ST CHN 510 1300-CSM BT225 CHN 823 diode CHN 510 SLC-500 ST CHN t4
Contextual Info: Print I/O Ink, Damp and Register Modules Catalog Number 1300-GDI, 1300-CCM, 1300-PWM and 1300-CSM Technical Data Typical Print I/O Arrangement Dedicated Purpose and Functionality. Print I/O is a t0WTC0St modular I/O system for specific applications that offer all the functions

Contextual Info: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection

CHN 234 diode

Abstract: dali master schematic GRM188B31H104KA92D DMX RECEIVER diode chn 115 dali power supply circuit diagram dmx512 RK73B1 chn 711 dali schematic
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:

Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

CHN 345 X

Contextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

CHN 602

Abstract: CHN 847
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020 3.0-3.6V for the SST29LE020 2.7-3.6V for the SST29VE020

CHN 847

Abstract: chn 734
Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption

CHN 847

Abstract: 29EE512
Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • 5.0V-only for SST29EE512 3.0-3.6V for SST29LE512 2.7-3.6V for SST29VE512 Fast Read Access Time - 5.0V-only operation: 70 and 90 ns

Contextual Info: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: f r 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • Uniform 32 KWord blocks Fast Read Access Time: - • Uniform 2 KWord sectors

TEKELEC te 306

Abstract: 30601
Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A

actron ab

Abstract: 11a18 CHN 949 VF800
Contextual Info: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention

CHN 329

Abstract: DP 904C
Contextual Info: 21Ü 16 Megabit 1M x 16-Bit Multi-Purpose Flash SST39VF160Q / SST39VF160 Advance Information FEATURES: • Organized as 1 M X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention

chn 347

Contextual Info: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention