CHN 447 Search Results

CHN 550

Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Contextual Info: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

Contextual Info: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection

CHN 512

Abstract: CHN 314 1/CHN 852
Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

chn 348

Abstract: CHN 314 chn 317 CHN 852 chn 440
Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: 21Ü 1 Megabit 128K x 8 Multi-Purpose Flash SST39SF010 Data Sheet FEATURES: • Organized as 128K X 8 • Single 5.0V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention Low Power Consumption:

Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

27721

Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

CHN 345 X

Contextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

chn 347

Contextual Info: 1 Megabit 128K x 8 SuperFlash MTP SST37VF010 Preliminary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)

LUPA-1300-2

Abstract: LUPA1300-2 AN57864 AN54468 ke63 CHN 816 Color Filter Array CFA transistor CHN 64 149 transistor CHN 64 229 -20/LUPA1300-2
Contextual Info: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate

Digital Alarm Clock using 8051

Abstract: chn 448 chn 706 CHN 632 CHN 703 RAM 2112 256 word 32.768mhz pin hole thru chn 608 microcontroller 8051 application of alarm clock octal tri state buffer ic
Contextual Info: áç XRT84L38 OCTAL T1/E1/J1 FRAMER FEBRUARY 2004 REV. 1.0.0 GENERAL DESCRIPTION The XRT84L38 is an eight-channel 1.544 Mbit/s or 2.048 Mbit/s DS1/E1/J1 framing controller. The XRT84L38 contains an integrated DS1/E1/J1 framer which provides DS1/E1/J1 framing and error accumulation in accordance with ANSI/ITU_T specifications.

PAIRGAIN

Abstract: CHN 552 Motorola wireless router Type 0X69 BT8953EPF E1 PCM encoder RS8953B RS8953BEPF RS8953BEPJ RS8953SPB Water level indicator using 8051
Contextual Info: RS8953B/8953SPB HDSL Channel Unit The RS8953B is a High-Bit-Rate Digital Subscriber Line HDSL channel unit designed to perform data, clock, and format conversions necessary to construct a Pulse Code Multiplexed (PCM) channel from one, two, or three HDSL channels. The PCM channel

Contextual Info: IDT74FCT3807/A 3.3V CMOS 1-TO-10 CLOCK DRIVER In te g rate d D ev ice T ech n ology , Inc. FEATURES: DESCRIPTION: • 0 .5 M IC R O N C M O S Technology • G u aran teed low skew < 3 5 0 p s m ax. • V ery low duty cycle distortion < 3 5 0p s (m ax.) •

diagram of ic p181

Abstract: P181 BL 712 P181 050 P181
Contextual Info: CMOS PARALLEL FIFO 64 x 4 and 64 x 5 FEATURES: • • • • • • • • • • • • • • • • • First-In/First-Out Dual-Port memory 64 x 4 organization IDT72401/72403 64 x 5 organization (IDT72402/72404) RAM-based FIFO with low fall-through time

westcode n 600 ch 18

Abstract: WESTCODE SW chn 840 P105CH p205ch Chn 835 Westcode Semiconductors p214ch WESTCODE 147 11 33 westcode n 600 ch 14
Contextual Info: s Fast Turn-Off Thyristors Shortform Design Guide Issue 6 Westcode “P” series of fast-switching thyristors have regenerative gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values combined with the low forward switching

Contextual Info: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:

TDA1316

Abstract: CHN 749 CHN 749 datasheet TDA1316 DATA SHEET chn 448 CHN 816 SAA7323 SOT208A CHN 541 TDA1317
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA2022 Tape formatting and error correction for the DCC system Product specification Supersedes data of February 1993 File under Integrated Circuits, Miscellaneous Philips Semiconductors February 1994 Philips Semiconductors

tda1316

Abstract: CHN 749 TDA1317 SAA7323 tda1316 write CHN 749 datasheet TDA1316 DATA SHEET SAA2022 SAA2022GP SAA2032
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA2022 Tape formatting and error correction for the DCC system Product specification Supersedes data of February 1993 File under Integrated Circuits, Miscellaneous Philips Semiconductors September 1995 Philips Semiconductors

Contextual Info: Ä G M & K K S l O ÎM [F @ K [îfl ¥ D M in te i 82595FX ISA BUS HIGH INTEGRATION ETHERNET CONTROLLER Optimal Integration for Lowest Cost Solution — Glueless 8-Bit/16-Bit ISA Bus Interface — Provides Fully 802.3 Compliant AUI and TPE Serial Interface

Contextual Info: Intel Xeon® Processor E5 Product Family Datasheet- Volume Two May 2012 Reference Number: 326509-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS