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    CHMC S 48 Search Results

    CHMC S 48 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74AC11138NSR
    		Texas Instruments 3-Line to 8-Line Decoders/Demultiplexers 16-SO -40 to 85 Visit Texas Instruments
    74ACT11008N
    		Texas Instruments Quadruple 2-Input Positive-AND Gates 16-PDIP -40 to 85 Visit Texas Instruments Buy
    74ACT11030DE4
    		Texas Instruments 8-Input Positive-NAND Gates 14-SOIC -40 to 85 Visit Texas Instruments
    74ACT11240DW
    		Texas Instruments Octal Buffers/Line Drivers With 3-State Outputs 24-SOIC -40 to 85 Visit Texas Instruments Buy
    74ACT11244PWR
    		Texas Instruments Octal Buffers/Drivers With 3-State Outputs 24-TSSOP -40 to 85 Visit Texas Instruments Buy

    CHMC S 48 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    chmc

    Abstract: isolation transformer 6V R2165 chmc sh UTC9106 Chmc s sc910 SC9106 chmc s2
    Contextual Info: Silicore TONE RINGER SC9106 GENERAL DESCRIP TION Outline Dra wing The SC9106 is a bipolar integrated circuit designed for teleph on e bell replace ment. FUNCTIONS z Two oscillators z Output amp lifier z Power supply control circuit FEATURES z Designed for telephone bell replacement.


    Original     		SC9106 SC9106 SC9106. chmc isolation transformer 6V R2165 chmc sh UTC9106 Chmc s sc910 chmc s2 PDF

    Samwin

    Abstract: SW4N60 CHMC
    Contextual Info: SAMWIN SW4N60 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better


    Original     		SW4N60 Samwin SW4N60 CHMC PDF

    SW7N60

    Abstract: Samwin
    Contextual Info: SAMWIN SW7N60 Features General Description N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


    Original     		SW7N60 200nF 300nF SW7N60 Samwin PDF

    SW50N06

    Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
    Contextual Info: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


    Original     		SW50N06 023ohm SW50N06 Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent PDF

    SW2N60

    Abstract: Samwin SW2N
    Contextual Info: SAMWIN SW2N60 General Description Features zN-Channel MOSFET zBVDSS Minimum zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A : 16 nc : 50 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This


    Original     		SW2N60 O-252 O-220 O-251 SW2N60 Samwin SW2N PDF

    CPGA100

    Contextual Info: rz7 SGS-THOMSON * 7 # . H O Ê lM ilL IO T [ii!lD ( g @ W .A .R .P . 1 .1 WEIGHT ASSOCIATIVE RULE PROCESSOR ADVANCED DATA • High Speed Rules Processing ■ Antecedent Membership Functions with any Shape ■ Up to 256 Rules (4 Antecedents, 1 Consequent)


    OCR Scan     		CPGA100 PLCC84 100-pin CPGA100 84-lead PDF