CHIP LED 2012 Search Results

KP-2012SYC

Abstract: KP2012SYC
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SYC Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.

KPTC-2012SYC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SYC Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.

KPTK-2012SECK

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.

KP-2012SECK

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.

KPT-2012SECK

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.

KPTK-2012SECK

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.

KPTK-2012SYC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SYC Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012PBC-A Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0X1.25mm SMT LED,0.5mm MAX.THICKNESS. The Blue source color devices are made with InGaN

KP-2012EC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP KP-2012EC Features HIGH EFFICIENCY RED Description ! 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The High Efficiency Red source color devices are ! LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on Gallium ! WIDE VIEWING ANGLE.

KP-2012QBC-D

Abstract: kp2012qbcd kp-2012qbc
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012QBC-D Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Blue source color devices are made with AlInGaN on

kpt-2012qbc-d

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012QBC-D Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Blue source color devices are made with AlInGaN on

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012VGC-A Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Green source color devices are made with InGaN on

KP-2012EC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP KP-2012EC Features HIGH EFFICIENCY RED Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. LOW POWER CONSUMPTION. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide WIDE VIEWING ANGLE.

KDA0085

Abstract: KP-2012SEC
Contextual Info: 2.0x1.2mm SMD CHIP LED LAMP KP-2012SEC Features SUPER BRIGHT ORANGE Description !2.0mmx1.2mm SMT LED,1.1mm THICKNESS. The Super Bright Orange source color devices are !LOW POWER CONSUMPTION. !WIDE VIEWING ANGLE. made with DH InGaAlP on GaAs substrate Light

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012VGC-Z PRELIMINARY SPEC Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Green source color devices are made with InGaN Light

KP-2012PBC-J

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012PBC-J PRELIMINARY SPEC Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Blue source color devices are made with InGaN on SiC

KPHCM

Abstract: KPHCM-2012SURCK
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: KPHCM-2012SURCK Hyper Red Features Description z 2.0X1.25mm SMT LED,0.5mm MAX.THICKNESS. The Hyper Red source color devices are made with z LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode.

KPTK-2012PBC-J

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012PBC-J PRELIMINARY SPEC Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Blue source color devices are made with InGaN on SiC

KPTK-2012VGC-Z

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012VGC-Z PRELIMINARY SPEC Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Green source color devices are made with InGaN Light

KPTC-2012MGC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012MGC Mega Green Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Mega Green source color devices are made with z LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode. z WIDE VIEWING ANGLE.

KPTK-2012SURC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SURC Hyper Red Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Hyper Red source color devices are made with z LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode. z WIDE VIEWING ANGLE.

KPHBM-2012SURKCGKC

Abstract: KPHBM
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHBM-2012SURKCGKC PRELIMINARY SPEC Hyper Red Green Features Description z 2.0mmx1.25mm SMT LED, 0.45mm MAX. THICKNESS. The Hyper Red source color devices are made with z BI -COLOR, LOW POWER CONSUMPTION. InGaAlP on GaAs substrate Light Emitting Diode.

Contextual Info: 3.2x1.6mm SMD CHIP LED LAMP Part Number: APTD3216QBC/D Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.2mmX1.6mm SMT LED, 1.8mm thickness. The Blue source color devices are made with InGaN Light

Contextual Info: 1.6X0.8mm SMD CHIP LED LAMP Part Number: APT1608SGD3 Super Bright Green Features Description z 1.6mmX0.8mm SMT LED, 0.75mm thickness. The Super Bright Green source color devices are made with z Low power consumption. Gallium Phosphide Green Light Emitting Diode.