CHIP LED 2012 Search Results
CHIP LED 2012 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MD28F020-12/B | Rochester Electronics LLC | 28F020 - 2048K (256K x 8) CMOS Flash Memory |
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| PEF24628EV1X | Rochester Electronics LLC | PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip |
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| 20121C00BD | Amphenol Communications Solutions | Elite Backplane connectors, BMA 12pair, 8position, NiS | |||
| DFE252012PD-100M=P2 | Murata Manufacturing Co Ltd | Ferrite Chip, 1 Function(s), 20V, 1.1A, 2 Pin(s) | |||
| DFE252012PD-6R8M=P2 | Murata Manufacturing Co Ltd | Ferrite Chip, 1 Function(s), 20V, 1A, 2 Pin(s) |
CHIP LED 2012 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: QBLP613_Series 1204 Side View LED - QT-Brightek Chip LED Series SMD 1204 LED Part No.: QBLP613_Series Product: QBLP613_Series |
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qblp613 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SYCK SUPER BRIGHT YELLOW Description Features z2.0X1.25mm zLOW SMT LED,0.5mm MAX.THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL on GaAs substrate light emitting diode chip. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. |
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kphcm-2012syck2000pcsdsae6001jan/10/2007 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SYCK Super Bright Yellow Description Features 2.0mmx1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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kptc-2012syck2000pcssing010dsac0119+1 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SECK Super Bright Orange Features Description 2.0mmx1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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kptc-2012seck2000pcssi012seckdec/20/2010+1 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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kpt-2012seck2000pcssioct/05/2010dsaa4129+1 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SYCK Super Bright Yellow Features Description 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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kpt-2012syck2000pcssioct/05/2010dsab1887+1 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SYCK Super Bright Yellow Features Description 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kphcm-2012syck2000pcsdec/20/2010dsae6001 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kphcm-2012seck2000pcsdec/20/2010dsae5997 | |
KP-2012SECContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SEC Features Description z2.0mmx1.25mm zLOW SMT LED,1.1mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Super Bright Orange device is made with InGaAlP on GaAs substrate light emitting diode chip. VIEWING ANGLE. |
Original |
kp-2012sec2000pcsdsab3530jun/11/2007 | |
KPTK-2012SYCKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SYCK Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
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kptk-2012syck2000pcsdsac1203jul/09/2007 | |
KPTK-2012SECContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SEC Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
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kptk-2012sec2000pcsdsac0144jul/09/2007 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SYCK Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
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kp-2012syck2000pcsdsaa7271may/08/2014 | |
KP-2012SECK
Abstract: KP-2012
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kp-2012seck2000pcsmounti3510aug/17/2010+2 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP KPTC-2012SYC SUPER BRIGHT YELLOW Description Features 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow device is made with DH InGaAlP LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. WIDE VIEWING ANGLE. |
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kptc-2012syc2000pcsdsac0118mar/17/2005 | |
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KP-2012SYC
Abstract: KP2012SYC
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kp-2012syc2000pcsdsaa3738jun/29/2007+1 | |
KPTC-2012SYCContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SYC Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
kptc-2012syc2000pcsdsac0118jul/02/2007 | |
KPTK-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
kptk-2012seck2000pcsdsac0145jul/09/2007 | |
KP-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
kp-2012seck2000pcsdsab3510jun/29/2007 | |
KPT-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
kpt-2012seck2000pcsdsaa4129jun/29/2007 | |
KPTK-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kptk-2012seck2000pcsmar/27/2009dsah3791 | |
KPTK-2012SYCContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SYC Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
kptk-2012syc2000pcsdsac1202jul/09/2007 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP z Low power consumption. on GaAs substrate light emitting diode chip. |
Original |
kpt-2012seck2000pcsmoudsaa4129apr/30/2010+1 | |
KPT-2012SYCKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SYCK Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kpt-2012syck2000pcsmoudsab1887apr/30/2010+1 | |
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Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SYCK Super Bright Yellow Features Description z 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kphcm-2012syck2000pcsdsae6001dec/22/2011 | |