CHIP LED 2012 Search Results
CHIP LED 2012 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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GCM32ED70J476KE02L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for Automotive | |||
GRM022R61C104ME05L | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM033D70J224ME01D | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM155R61H334KE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose | |||
GRM2195C2A273JE01J | Murata Manufacturing Co Ltd | Chip Multilayer Ceramic Capacitors for General Purpose |
CHIP LED 2012 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: QBLP613_Series 1204 Side View LED - QT-Brightek Chip LED Series SMD 1204 LED Part No.: QBLP613_Series Product: QBLP613_Series |
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QBLP613 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SYCK SUPER BRIGHT YELLOW Description Features z2.0X1.25mm zLOW SMT LED,0.5mm MAX.THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL on GaAs substrate light emitting diode chip. VIEWING ANGLE. FOR BACKLIGHT AND INDICATOR. |
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KPHCM-2012SYCK 2000PCS DSAE6001 JAN/10/2007 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SYCK Super Bright Yellow Description Features 2.0mmx1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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KPTC-2012SYCK 2000pcs sing010 DSAC0119 DEC/20/2010 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SECK Super Bright Orange Features Description 2.0mmx1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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KPTC-2012SECK 2000pcs si012SECK DEC/20/2010 DSAC0116 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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KPT-2012SECK 2000pcs siOCT/05/2010 DSAA4129 OCT/05/2010 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SYCK Super Bright Yellow Features Description 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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KPT-2012SYCK 2000pcs siOCT/05/2010 DSAB1887 OCT/05/2010 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SYCK Super Bright Yellow Features Description 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Yellow device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
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KPHCM-2012SYCK 2000pcs DEC/20/2010 DSAE6001 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. |
Original |
KPHCM-2012SECK 2000pcs DEC/20/2010 DSAE5997 | |
KP-2012SECContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SEC Features Description z2.0mmx1.25mm zLOW SMT LED,1.1mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Super Bright Orange device is made with InGaAlP on GaAs substrate light emitting diode chip. VIEWING ANGLE. |
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KP-2012SEC 2000PCS DSAB3530 JUN/11/2007 KP-2012SEC | |
KPTK-2012SYCKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SYCK Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
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KPTK-2012SYCK 2000PCS DSAC1203 JUL/09/2007 KPTK-2012SYCK | |
KPTK-2012SECContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SEC Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
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KPTK-2012SEC 2000PCS DSAC0144 JUL/09/2007 KPTK-2012SEC | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SYCK Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
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KP-2012SYCK 2000pcs DSAA7271 MAY/08/2014 | |
KP-2012SECK
Abstract: KP-2012
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KP-2012SECK 2000pcs mounti3510 AUG/17/2010 KP-2012SECK DSAB3510 KP-2012 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP KPTC-2012SYC SUPER BRIGHT YELLOW Description Features 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow device is made with DH InGaAlP LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. WIDE VIEWING ANGLE. |
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KPTC-2012SYC 2000PCS DSAC0118 MAR/17/2005 KPTC-2012SYC | |
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KP-2012SYC
Abstract: KP2012SYC
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KP-2012SYC 2000PCS DSAA3738 JUN/29/2007 KP-2012SYC KP2012SYC | |
KPTC-2012SYCContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTC-2012SYC Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
KPTC-2012SYC 2000PCS DSAC0118 JUL/02/2007 KPTC-2012SYC | |
KPTK-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
KPTK-2012SECK 2000PCS DSAC0145 JUL/09/2007 KPTK-2012SECK | |
KP-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
KP-2012SECK 2000PCS DSAB3510 JUN/29/2007 KP-2012SECK | |
KPT-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
KPT-2012SECK 2000PCS DSAA4129 JUN/29/2007 KPT-2012SECK | |
KPTK-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED, 0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
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KPTK-2012SECK 2000pcs MAR/27/2009 DSAH3791 KPTK-2012SECK | |
KPTK-2012SYCContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPTK-2012SYC Super Bright Yellow Features Description z 2.0mmx1.25mm SMT LED, 0.75mm THICKNESS. The Super Bright Yellow device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
KPTK-2012SYC 2000PCS DSAC1202 JUL/09/2007 KPTK-2012SYC | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SECK Super Bright Orange Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Orange device is made with AlGaInP z Low power consumption. on GaAs substrate light emitting diode chip. |
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KPT-2012SECK 2000pcs mouDSAA4129 APR/30/2010 KPT-2012SECK DSAA4129 | |
KPT-2012SYCKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPT-2012SYCK Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
KPT-2012SYCK 2000pcs mouDSAB1887 APR/30/2010 KPT-2012SYCK DSAB1887 | |
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SYCK Super Bright Yellow Features Description z 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Yellow device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
KPHCM-2012SYCK 2000pcs DSAE6001 DEC/22/2011 |