CHIP DIE HP TRANSISTOR Search Results

transistor k 4212 fet

Abstract: Silicon Bipolar Transistor Hewlett-Packard transistor k 4212
Contextual Info: Transistor Chip Use Application Note A005 Part I. Assembly Considerations 1.0 Chip Packaging for Shipment 1.1 General Hewlett-Packard transistor chips are shipped in chip carriers with a clear or black elastomer as a carrier medium. There are up to 100 chips

GaAs FET operating junction temperature

Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .

AN-S003

Abstract: 1 kilo ohm resistor specifications bonding capillary hp mmic MSA-0100 MSA-0200 MSA-0300 MSA-0500 MSA-0600 MSA-0700
Contextual Info: MODAMP Silicon MMIC Chip Use Application Note S009 Introduction This Application Note supplies information needed to layout and assemble circuits when using Hewlett-Packard’s MODAMP silicon MMIC amplifiers in chip form. Section I gives an overview of the

Contextual Info: 2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features • Low Noise Figure: 1.1 dB Typical at 12 GHz • High Associated Gain: 9.5 dB Typical at 12 GHz • High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

MQ1129

Abstract: MD-1129 MD1123 MD1129 MD1129F MD1130 MD1130F
Contextual Info: MDI 129 s'ucon MDI 129F MQ1129 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation ap­ plications. • Excellent Temperature Tracking — MD1129.F

a1270* transistor

Abstract: 1689c hp plotter
Contextual Info: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2

NFF16101

Abstract: PCC HP
Contextual Info: APPLICATIONS FILM CAPACITORS FOLIENKONDENSATOREN Ê 1 Power Capacitor Chips from EPCOS make converters lighter and more compact. Dank der PCCTechnik von EPCOS werden Umrichter immer schlanker. PACKING A PUNCH Power Capacitor Chips for lean converter design. Capable of handling voltages up to

5043

Abstract: optocoupler hcpl HP 2530 optocoupler MARKING SMD IC CODE 8-pin HP 2531 optocoupler
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device

HP 2531

Abstract: HP 2531 optocoupler 2n3904 smd pin configuration HP RF TRANSISTOR GUIDE transistor rf type M 2530 gold detectors circuit HCPL-5501 TRANSISTOR SMD MARKING CODE pa optocoupler HP HCPL-653X
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device

2n3904 smd pin configuration

Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
Contextual Info: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC

n06hd

Abstract: N Channel MOS FET 3 ghz International rectifier thyristor manual SOT953 Thyristor to220 N Channel MOS FET up to 5 ghz MOS FET SOT-223 ON st naming DC variable power center tap MOTOROLA TRANSISTOR TO-220
Contextual Info: TND310 ON Semiconductor Device Nomenclature Prepared by: Steve West ON Semiconductor http://onsemi.com REFERENCE MANUAL Whenever possible, ON Semiconductor uses the following numbering systems in the naming of their products. The ESD/TVS, small signal diode and transistor, and

Diode SMD ED 9C

Abstract: transistor smd marking Kd LA 5530
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. F ea tu r es • D ual M arked w ith D ev ice

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

transistor WT6

Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

K 1358 fet transistor

Abstract: DIE CHIP 51 FET
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y j 50->| 3? • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

Contextual Info: MwT-A8 16 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y p -7 5 * j • • > • • • • p -7 5 * J a 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 1200 MICRON GATE WIDTH

transistor MWTA 06

Contextual Info: MwT-11 M ic r o w a v e 14 GHz High Power GaAs FET tec h no lo g y l«-75 -*| i«-75 -*| 4> e » W7mi F • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

Ablebond 190

Abstract: ablebond technical
Contextual Info: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: 100 kHz Typical • Single Supply Operation:

Ablebond 36-2

Abstract: 71-1LM1 HMMC-5220 Ablebond 190 ablebond technical hmmc-5
Contextual Info: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:

MwT-671

Abstract: LQD 421 MWT671HP lsoj
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 4m * • • • • • • Units in pun 4-50-fc 70 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH

transistor bf 244

Abstract: AT-21400 D42E Rbl 69 AT-21400-G chip die hp transistor
Contextual Info: blE J> HEWLETT-PACKARD/ CMPNTS HEW LETT PACKARD m m MMi475flM □ □□t17cU Features • • • • 40B AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Chip Outline1 Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs High S21 Gain: 9.5 dB Typical at 4 GHz

transistor smd 1FT

Abstract: AT12L
Contextual Info: W h a lH E W L E T T $ mLKM PACKARD Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X ‘ See matrix for available extensions. Features

MICRON POWER RESISTOR MLS

Abstract: chip die hp transistor
Contextual Info: MwT-A11 14 GHz High Power GaAs FET MICROWAVE TECHNOLOGY J*- 7S +| • • • rn inmmin 101ini r F Ì - 86 -J 1/1 ''I t- 75 J £ Ì - 186 - * N- + 68 mmt m i 343 - 1 • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN

transistor MWTA 06

Abstract: mwta 06
Contextual Info: MwT-A11 14 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 2400 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION CHOICE OF CHIP AND ONE