CHA50 Search Results

AN0020

Abstract: CHA5014 9v23
Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

A5052A

Abstract: AN0017 CHA5052
Contextual Info: CHA5052aQGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052aQGG is a monolithic high power amplifier. UMS A5052A YYWW three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

CHA5051

Contextual Info: CHA5051 RoHS COMPLIANT 7-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5051 is a high gain three-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication

AN0017

Abstract: CHA5051-QDG
Contextual Info: CHA5051-QDG RoHS COMPLIANT 7-16GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5051-QDG is a high gain threestage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial

AN0017

Abstract: CHA5056-QGG
Contextual Info: CHA5056-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5056-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

CHA5093TCF/24

Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
Contextual Info: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,

Contextual Info: CHA5092 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5092 is a high gain broadband twostage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

AN0005

Abstract: CHA5093 CHA5093TCF
Contextual Info: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride

Contextual Info: CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

SAS 251

Abstract: for 2090 ic chip
Contextual Info: CHA5010b RoHS COMPLIANT X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride

monolithic amplifier MAR

Abstract: 22-26GHz
Contextual Info: CHA5092 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5092 is a high gain broadband twostage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

04 monolithic amplifier

Contextual Info: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S band monolithic three stage power driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

CHA5056

Contextual Info: CHA5056 RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd3 Vd2 Vd1 The CHA5056 is three-stage monolithic high power amplifier. RFout RFin The backside of the chip is both RF and DC grounds. This helps to simplify the assembly

x-band power transistor

Abstract: x band pulsed amplifier
Contextual Info: CHA5010a X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010a is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.

CHA5042

Contextual Info: CHA5042 13–16GHz High Power Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5042 is a three-stage pHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. The CHA5042 provides 29.5dBm nominal output power at 1dB gain compression

CHA5042

Abstract: CHA5042-MFF
Contextual Info: CHA5042 13-17 GHz Power Amplifier GaAs Monolithic Microwave IC Description The CHA5042 is a compact three-stage PHEMT HPA MMIC designed for VSAT ground terminals and other radio applications. It provides typically more than 27dBm nominal output power at 1dB gain compression over the

CHA5056

Contextual Info: CHA5056 RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC Description Vd3 Vd2 Vd1 The CHA5056 is three-stage monolithic high power amplifier. RFout RFin The backside of the chip is both RF and DC grounds. This helps to simplify the assembly

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

CHA5050-QDG

Abstract: 7812 7912
Contextual Info: CHA5050-QDG RoHS COMPLIANT 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5050-QDG is a medium power amplifier four stages monolithic circuit. It is designed for a wide range of applications, from military to commercial

BP 109 transistor

Contextual Info: u n ite d m o n o lit h ic se m ico n d u cto rs CHA5093 22-26GHz High Power Amplifier GaAs Monolithic Microwave 1C Description Vg 1 Vg2 Vg3 The CHA5093 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to

SAS 251

Contextual Info: CHA5010b X Band Driver Amplifier GaAs Monolithic Microwave IC Description This CHA5010b is a two-stage monolithic driver amplifier. The circuit is manufactured with a standard MESFET process : via holes through the substrate, air bridges and electron beam gate lithography.