CH724FL Search Results

tc5118160

Contextual Info: INTEGRATED . TO S H IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118160AJ / AFT - 60 TC5118160AJ / AFT - 70 SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT DYNAMIC RAM DESCRIPTION The TC5118160AJ/AFT is the new generation dynamic RAM organized 1,048,576 words by 16 bits.

Contextual Info: TOSHIBA THM362040AS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The TH M 362040A is a 2,097,152 word by 36 bit dynam ic RA M m odule w hich is assem bled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This m odule can be used as

Contextual Info: TOSHIBA TC74VHC257F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC257F, TC74VHC257FN, TC74VHC257FS, TC74VHC257FT QUAD 2 -CHANNEL MULTIPLEXER 3 - STATE The TC74VHC257 is an advanced high speed CMOS MULTIPLEXER fabricated with silicon gate C2MOS

Contextual Info: TC554161FTÏ-85L/10L PRELIMINARY SILICON GATE CMOS SLindvd Static RAM TOSHIBA 262,144 WORD x 16 BIT STATIC RAM Description The T C 554161 FTI is a 4,194,304 bits static random access memory organized as 262,144 words by 16 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high_speed and low

Contextual Info: TO SH IBA TC74VHC161,163F/FN/FS/FT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC161F, TC74VHC161FN, TC74VHC161 FS, TC74VHC161FT TC74VHC163F, TC74VHC163FN, TC74VHC163FS, TC74VHC163FT SYNCHRONOUS PRESETTABLE 4 - BIT COUNTER TC74VHC161F / FN / FS/ FT BINARY, ASYNCHRO NOUS CLEAR

Contextual Info: TOSHIBA TC55328AP/AJ-15/20/25/35 SILICON GATE CMOS 32,768 WORD x 8 BIT CMOS STATIC RAM Description The TC55328AP/AJ is a 262,144 bit high speed CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.