CGHV1F025S Search Results
CGHV1F025S Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CGHV1F025S |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 12DFN | Original | 2.55MB | |||
CGHV1F025S-AMP1 |
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RF/IF and RFID - RF Evaluation and Development Kits, Boards - DEMO HEMT TRANS AMP1 CGHV1F025S | Original | 2.55MB |
CGHV1F025S Price and Stock
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MACOM CGHV1F025SRF MOSFET HEMT 40V 12DFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV1F025S | Cut Tape | 246 | 1 |
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CGHV1F025S | 500 |
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CGHV1F025S | 132 | 1 |
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CGHV1F025S | 132 | 1 |
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MACOM CGHV1F025S-AMP1DEMO HEMT TRANS AMP1 CGHV1F025S |
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CGHV1F025S-AMP1 | Bulk |
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CGHV1F025S-AMP1 |
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CGHV1F025S-AMP1 | 1 |
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MACOM CGHV1F025S-AMP4RF FRONT END REFERENCE DESIGNS |
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CGHV1F025S-AMP4 | 1 |
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Wolfspeed CGHV1F025STransistors |
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CGHV1F025S | 19 |
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CGHV1F025S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and |
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CGHV1F025S CGHV1F025S | |
Contextual Info: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and |
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CGHV1F025S CGHV1F025S |