CGH31240 Search Results
CGH31240 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CGH31240F |
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240W GAN HEMT 28V 2.7-3.1GHZ FET | Original | 2.03MB | |||
| CGH31240F |
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240W GAN HEMT 28V 2.7-3.1GHZ FET | Original | 2.03MB |
CGH31240 Price and Stock
CGH31240 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
300 watts amplifier s-band 2.7-3.1GHz
Abstract: CGH31240 ATC600F CGH31240F 300 watts amplifier s-band 20 watts transistor s-band 10UF ATC600S CGH3124 power transistor gan s-band
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CGH31240F CGH31240F CGH3124 300 watts amplifier s-band 2.7-3.1GHz CGH31240 ATC600F 300 watts amplifier s-band 20 watts transistor s-band 10UF ATC600S CGH3124 power transistor gan s-band | |
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Contextual Info: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar |
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CGH31240F 50-ohm CGH31240F CGH3124 | |
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Contextual Info: CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar |
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CGH31240F 50-ohm CGH31240F CGH3124 CGH31240F-TB | |
CGH31240F
Abstract: cgh31240
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CGH31240F 50-ohm CGH31240F CGH3124 CGH31240F-TB cgh31240 | |
CGH31240F
Abstract: JESD22-C101-C 300 watts amplifier s-band CGH31240 CGH31240-TB A114D 300 watts amplifier s-band 2.7-3.1GHz cree rf CGH3124 CGH31240F-TB
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CGH31240F 50-ohm CGH31240F CGH3124 JESD22-C101-C 300 watts amplifier s-band CGH31240 CGH31240-TB A114D 300 watts amplifier s-band 2.7-3.1GHz cree rf CGH3124 CGH31240F-TB |