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CGH25120FCGH25120F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH25120F Abstract: J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22 Contextual Info: PRELIMINARY CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	CGH25120F CGH25120F CGH2512 J137 ATC600S Model CGH25120F ATC600F CGH2512 CGH25120 CGH25120FCGH25120F CGH25120F-TB JESD22	PDF
Contextual Info: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	CGH25120F CGH25120F CGH2512 CGH25120F-Tpplications	PDF
Contextual Info: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	CGH25120F CGH25120F CGH2512	PDF
RF Transistor s-parameter Abstract: j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC Contextual Info: CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Cree’s CGH25120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz	Original	CGH25120F CGH25120F CGH2512 CGH25120F-Tfor RF Transistor s-parameter j1108 CGH25120 CGH25120F-TB 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC	PDF