CFY 65 Search Results

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20

GSO05553

Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

3tb 50 siemens

Contextual Info: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393

SMD MARKING CODE 901

Abstract: CFY 19 CFY 10 GaAs FET cfy 14
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

GaAs FET cfy 19

Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

CLY 30

Abstract: cfy siemens CLYS MW-6 cly5
Contextual Info: Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Type Maximum Ratings Characteristics TA = 25 °C Package Lead Code V J'bs J'gs V h mA Aot mW 8m mS F dB CFY 77-08 3.5 2 60 180 65 0.7 10.5 12 MW-4 3 CFY 77-10 3.5 2 60 180 65 0.9 10 12 MW-4 3 :

GaAs FET cfy 14

Abstract: GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19
Contextual Info: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,

cfy siemens

Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

CFY 10

Abstract: gaas fet marking a Ga FET marking k CFY 19 cfy 14 d marking Micro-X CFY 18 GaAs FET cfy 19 GaAs Amplifier Micro-X Marking k Q62703-F106
Contextual Info: GaAs FET ● ● ● ● ● CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel Pin Configuration

CFY77-10

Abstract: HEMT HEMT marking K 036 906 051 VS005553
Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type

Q62702-F1394

Contextual Info: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

CFY65

Abstract: CFY 65 siemens 230 97 o VXM05208
Contextual Info: SIEMENS AIGaAs/GaAs HEMT CFY 65 • Very low noise F = 1.2 dB max. at 12 GHz • Very high gain (G a = 11.5dB typ. at 12 GHz) • For low-noise front-end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions!

HEMT marking K

Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!

ncl 071

Abstract: ncl 052 ncl 058
Contextual Info: Infineon technologies GaAs FET CFY 30 Data Sheet • Low noise {Fmin = 1.4 dB @ 4 GHz • High gain 11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation

GaAs FET cfy 14

Abstract: marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19
Contextual Info: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation

GaAs FET cfy 14

Abstract: Q62703-F97 CFY 18
Contextual Info: GaAs FET ● ● ● ● ● ● ● CFY 30 Low noise Fmin = 1.4 dB at 4 GHz High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz lon-implanted planar structure Chip all gold metallization Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions!

cfy 19 siemens

Contextual Info: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

cfy siemens

Abstract: cfy 19 siemens CFY 19 cfy 14 siemens MARKING SOT-143 C5 CFY 18 CFY 10 6MA80 CFY10
Contextual Info: SI EM ENS A K T I E N G E S E L L S C H A F 47E D fl235büS OOSbSflü □ « S I E G GaAsFETs Metal Ceramic Package Type B B S El □ S S Max. ratings Package M arking Fig. 14 14 100 mil 100 mil C10 C11 23 23 — - 11.5 11.5 - - Cerec-XF Cerec-XF Cerec-XF

gaas fet micro-X Package marking

Abstract: INFINEON DIODE BAS 70 infineon radar BFY420 GaAs Amplifier Micro-X Marking N
Contextual Info: GaAs Components Infineon ?0í^nü!og¡«» HiRel Discretes and Microwave Semiconductors 11.1 Preliminary Remarks This Paragraph gives an overview on the HiRel Small Signal Microwave Semiconductors available from Infineon. Full data sheets are also given in our HiRel Discrete and

Q68000-A8370

Abstract: CGY MW
Contextual Info: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices