CF SOT89 Search Results

j 6910

Contextual Info: SIEMENS PNP Silicon AF Transistors • • • • • BCX 69 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX 68 NPN Marking Type BCX BCX BCX BCX 69 69-10 69-16 69-25 CF

Contextual Info: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics

Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Bolt down mounting recommendations for Ldmos Power Amplifier Author: Josselin FAY / Raimond DUMOULIN Doc. Nr. Date: 2007/03/27 Bolt down mounting recommendations for

KGF1323

Abstract: E346D GaAs FET sot89 T4 0660
Contextual Info: ODRKGF1323-04 Electronic Components KGF1323 Issue Date:Nov 8, 2004 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power and high efficiency. The KGF1323 specifications are guaranteed to a fixed matching circuit

t4 0654

Contextual Info: ODRKGF1323-03 Electronic Components KGF1323 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power and high efficiency. The KGF1323 specifications are guaranteed to a fixed matching circuit

KGF1312

Abstract: jan 8168 marking HD SOT89
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0028-38-72 ¡ electronic components KGF1312 ¡ electronic components KGF1312 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET

KGF1323

Abstract: ma 17393 6039 marking T4 0660
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0030-38-72 ¡ electronic components KGF1323 ¡ electronic components KGF1323 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1323, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET

KGF1283

Abstract: 9346 SOT89 tc 8066 3268 11978 17458
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0026-38-72 ¡ electronic components ¡ electronic components KGF1283 KGF1283 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET

KGF1284

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0027-38-72 ¡ electronic components KGF1284 ¡ electronic components KGF1284 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with

KGF1313

Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0029-38-72 ¡ electronic components KGF1313 ¡ electronic components KGF1313 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with

Contextual Info: Energy Monitoring PICtail Plus Daughter Board User’s Guide 2011 Microchip Technology Inc. DS51933A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

GaAs FET sot89

Abstract: L3374
Contextual Info: ODRKGF1283-03 Electronic Components KGF1283 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power, high gain, and high efficiency. The KGF1283 specifications are guaranteed to a fixed

GaAS fet sot89

Contextual Info: ODRKGF1313-03 Electronic Components KGF1313 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete driver FET with frequency ranging from UHF-band to L-band. This device features high output power and high efficiency. The KGF1313

L3374

Contextual Info: ODRKGF1283P-01 Electronic Components KGF1283P Issue Date:Sep 1, 2005 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1283P, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power, high gain, and high efficiency. The KGF1283P specifications are guaranteed to a fixed

GaAs FET sot89

Contextual Info: ODRKGF1284-03 Electronic Components KGF1284 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete driver FET with frequency range from UHF to L-band. This device features high output power, high gain, and high efficiency. The KGF1284

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY, Michael ASIS, Jose SALTA Doc. Nr. Date: 2008/02/14 General solder mounting recommendations

BTB1424AM3

Abstract: BTD2150AM3
Contextual Info: Spec. No. : C848M3-A Issued Date : 2002.08.18 Revised Date : 2005.10.04 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2150AM3 Features • Low VCE sat , VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA • Excellent current gain characteristics

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

FAY RF

Contextual Info: Development General NXP Semiconductors BL-Cellular Systems, MST RF Power Basestations DEV&QAS Title: Solder mounting recommendations for Ldmos Power Amplifiers Author: Josselin FAY / Raimond DUMOULIN Doc. Nr. Date: 2007/05/10 General solder mounting recommendations

mark E5 SOT-25

Abstract: cl68 sot-89 marking E5 XC6402 Voltage Detector SOT-89 marking 4.output A9 sot-23-5 TRANSISTOR cl68 ETR10
Contextual Info: XC6402 Series ETR1001_001 High Current, High Speed LDO Regulators, Voltage Detector Function •GENERAL DESCRIPTION The XC6402 series are precise, low noise, high current, positive voltage low dropout regulators with built-in voltage detector. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current

XC6402

Abstract: 4.output A9 sot-25 ETR1001 diode 3479
Contextual Info: XC6402 Series ETR1001_003 High Current, High Speed LDO Regulators, Voltage Detector Function •GENERAL DESCRIPTION The XC6402 series are precise, low noise, high current, positive voltage low dropout regulators with built-in voltage detector. They are fabricated using Torex’s CMOS process. The series features a voltage reference, an error amplifier, a current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC3650 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 1.2 A ICM: Collector-base voltage

Contextual Info: Transistors IC SMD Type Product specification 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE sat . 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics.