CEV SMD Search Results

30N60

Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO

transistor 228

Abstract: SMD Transistors code complementary npn-pnp smd transistor sot Surface mount NPN/PNP complementary transistor TRANSISTOR SMD CODE 15 smd transistor 5 lead smd 5 lead transistor dual transistor sot npn-pnp-transistors
Contextual Info: PRODUCT announcement New SOT-228 Surface Mount Dual Transistors CYTA44D CYT5551D CYT5551HCD 8 7 6 5 1 2 3 4 CYTA4494D 8 7 6 5 1 2 3 4 Dual, Isolated Complementary Transistors Dual, Isolated NPN Transistors features • Dual Transistors in the new SOT-228 eight 8 lead

SIEMENS thyristor

Abstract: transistor smd AFE smd transistor G9
Contextual Info: SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.

smd transistor A11b

Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
Contextual Info: GaAs Components Infineon •aîfinülogies Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips.

Contextual Info: O IX Y S Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS VCES = 600 V C = Collector, TAB = Collector Short Circuit SOA Capability Symbol Test Conditions VCES ^ v CGR Maximum Ratings = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MO 600 V v GES

Contextual Info: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID

ed15 smd diode

Abstract: ed13 smd diode ed22 smd diode SMD ED11 diode ed18 smd diode ed12 smd diode ed28 smd diode ed31 smd diode SMJ320C6701SP ed27 smd diode
Contextual Info: SMJ320C6701-SP www.ti.com . SGUS030E – APRIL 2000 – REVISED JULY 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR

ed15 smd diode

Abstract: ed13 smd diode ed19 smd diode ed18 smd diode ed22 smd diode SMD ED11 diode ed28 smd diode ed27 smd diode ed31 smd diode ed23 smd diode
Contextual Info: SMJ320C6701-SP www.ti.com . SGUS030E – APRIL 2000 – REVISED JULY 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR

ed19 smd diode

Contextual Info: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID

ed15 smd diode

Abstract: ed12 smd diode ed19 smd diode EA7 SMD Code ed28 smd diode ed13 smd diode
Contextual Info: SMJ320C6701-SP www.ti.com. SGUS030D – APRIL 2000 – REVISED MARCH 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR

ed22 smd diode

Abstract: ed31 smd diode ed27 smd diode
Contextual Info: SMJ320C6701-SP www.ti.com . SGUS030E – APRIL 2000 – REVISED JULY 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR

ed13 smd diode

Abstract: ed19 smd diode ed15 smd diode SMJ320C6701 SMJ320C6701-SP 5962-9866102VXA cev smd smd cev AC97 C6201
Contextual Info: SMJ320C6701-SP www.ti.com . SGUS030E – APRIL 2000 – REVISED JULY 2009 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR

TRANSISTOR NPN BA RV SOT - 89

Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes

Contextual Info: SMJ320C6701-SP www.ti.com SGUS030F – APRIL 2000 – REVISED SEPTEMBER 2013 RAD-TOLERANT CLASS-V FLOATING-POINT DIGITAL SIGNAL PROCESSOR Check for Samples: SMJ320C6701-SP FEATURES 1 • • • • 23456 • • • • • 1 2 3 4 5 6 Rad-Tolerant: 100-kRad Si TID

transistor smd bc rn

Abstract: SMD transistor y11 g21 SMD Transistor SMD Transistor Y12 SMD transistor BC RN transistor ic equivalent book smd y12 GaAs tunnel diode Common collector configuration basic applications of ujt
Contextual Info: GaAs Components Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.

HALL EFFECT 21E

Abstract: thyristor aeg transistor SMD 12E transistor Common Base configuration TRANSISTOR SMD MARKING CODE 2s aeg thyristor NPN transistor bc 148 lg smd transistor diode marking code YF MARKING SMD TRANSISTOR GG
Contextual Info: RF Transistors Data Book 1997 Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

qml-38535

Abstract: MAX691 MAX693 MAX695
Contextual Info: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV 10 SHEET PMIC N/A STANDARDIZED MILITARY DRAWING AMSC N/A 12 13 14 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 (nkfr.iw APPROVED BY THIS DRAUING IS AVAILABLE

MARKING ZX SOT-23

Abstract: BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323
Contextual Info: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. b v CBO b v c e o b v e b o *BVc £S MIN hpE ICBO VCB e v CE « íc m mm V c e (SAT) 9 lc ^ob »T m *OFF #,CE$ (V) <V) <"A) MIN MIN MAX m MIN General Purpose Amplifier/Switches

bd139 3v

Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V

BC5508

Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
Contextual Info: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes

outside plant access cabinet

Abstract: NT6X17BA NT6X18AA nortel dms urban cabinet wiring nortel opm dms-100 OPAC cabinet DMS100 opm Nortel OC-48 TransportNode MPC 68020 DMS-100 opm
Contextual Info: DMS-500 System Hardware Portfolio: 1998 A summary of the many benefits of DMS SuperNode hardware solutions ADAS, Concorde, Cornerstone, DataSPAN, DMS, DMS-10, DMS-100, DMS-200, DMS-250, DMS-500, DMS-Bus, DMS-Core, DMS-MTX, Internet Thruway, Magellan, Meridian Digital Centrex, MAP, Nortel,

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

VEB mikroelektronik

Abstract: MQE10 DL8640DC C41dc 4580d DS2510DC VEB Kombinat analoge schaltkreise VEB M ik ro e le k tro n ik c520d
Contextual Info: Neuheiten Weiterentwicklungen 1989 veb kombinat mikroelektronik Inhaltsverzeichnis Analoge Schaltkreise für die Konsumgüterelektronik H e rs te lle A 4555 D M u lti s t a n d a r d d e k o d e r f ü r P A L , SE C A M u n d N T S C 3 A 4565 D S ig n a l v e r s t e i l e r u n g s - u n d V e r z ö g e r u n g s s c h a ltu n g