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    CEU83A3G

    Contextual Info: CED83A3G/CEU83A3G N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 93A, RDS ON = 4.8mΩ @VGS = 10V. RDS(ON) = 7.4mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


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    CED83A3G/CEU83A3G O-251 O-252 O-251 CEU83A3G PDF