CERPACK K73 Search Results

transistor k70

Abstract: MIL-STD-1835 K73 Package K70 Package K63 Package diode k70 K69 Package K74 PACKAGE DIAGRAM CERPACK equivalent
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A 2 Package Diagram

MIL-STD-1835

Abstract: transistor k70 K70 Package 11F11 80059 80061 diode k70 CERPACK K73 11F-11 K804
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 51-80056 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 51-80057 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 51-80058 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A

Contextual Info: PAL22V10C _ PAL22VP10C Universal PAL Device SEMICONDUCTOR Features • • Ultra high speed supports today’s and tomorrow’s fastest microprocessors 10 user>programmable output macrocells — Output polarity control — Registered or combinatorial

PAL22V10C-7JC

Abstract: 22V10C 22V10C-10 CERAMIC LEADLESS CHIP CARRIER PAL22V10C-10JC K73 Package PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC PAL22V10C10DC PAL22V10C7JC PAL22VP10C-10JC
Contextual Info: PAL22V10C PAL22VP10C CYPRESS • 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — 2 new feedback paths PAL22VP10C • Synchronous PRESET, asynchronous RESET, and PRELOAD capability for flexible design and testability

22V10C

Abstract: PAL22V10C-7DC
Contextual Info: — . _ PAL22V10C _ PAL22VP10C SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 6 ns — tsu = 3 ns — fMAX = 117 MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­

palce22v10 programming guide

Abstract: cypress palce22v10 programming guide 5962-8984106LX PALCE22V10-10JI PALCE22V10
Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-03027 Spec Title: PALCE22V10 FLASH-ERASABLE REPROGRAMMABLE CMOS PAL R DEVICE Sunset Owner: Adrian Mendes (AMV) Replaced by: None PALCE22V10 is a replacement device for PALC22V10, PALC22V10B, and PALC22V10D. USE ULTRA37000TM FOR

22V10-25

Abstract: palce22v10 programming guide PALCE22V10-25 PALCE22V10 5962-8984102LX 22v10 pal Pal programming 22v10 PALC22V10B PALC22V10 cypress palce22v10 programming guide
Contextual Info: PALCE22V10 is a replacement device for PALC22V10, PALC22V10B, and PALC22V10D. USE ULTRA37000TM FOR ALL NEW DESIGNS PALCE22V10 Flash-erasable Reprogrammable CMOS PAL Device Features • DIP, LCC, and PLCC available — 5 ns commercial version 4 ns tCO 3 ns tS

palce22v10 programming guide

Abstract: 22V10-25 22V10-15 22v10 pal 22V10 PAL CMOS device PALC22V10B PALCE22V10 PALC22V10 PALC22V10D PALCE22V10-10
Contextual Info: PALCE22V10 is a replacement device for PALC22V10, PALC22V10B, and PALC22V10D. USE ULTRA37000TM FOR ALL NEW DESIGNS PALCE22V10 Flash-erasable Reprogrammable CMOS PAL Device Features • DIP, LCC, and PLCC available — 5 ns commercial version 4 ns tCO 3 ns tS

22V10D

Abstract: 22V10D-10 22V10D-15 PALC22V10D-15PC PALC22V10D-10PI PALC22V10D PALCE22V10 R2170 V10D PALC22V10D-15DMB
Contextual Info: For new designs, please refer to the PALCE22V10 PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

Contextual Info: fax id: 6011 PALCE22V10 'CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogramm ability

22V10D-10

Abstract: 22V10D MIL-STD-1835 V10D-9 R1238 ay 9j CERAMIC LEADLESS CHIP CARRIER K73 Package PALC22V10D R2170
Contextual Info: fax id: 6007 For new designs, please refer to the PALCE22V10. PALC22V10D CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

22V10D

Abstract: 22V10D-10 22V10D-15 PALC22V10D PALC22V10D-7JC PALCE22V10 V10D
Contextual Info: For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS PAL D Features D D Advanced secondĆgeneration PAL arĆ D D 5 ns tCO Low power 5 ns tS Ċ 90 mA max. commercial 10 ns 7.5 ns tPD testing Functional Description

22V10-25

Abstract: ALCE22V10 CE22V10 PALCE22V10 PALCE22V10-10 PALCE22V10-15 PALCE22V10-25 PALCE22V10-5 PALCE22V10-7 CERPACK K73
Contextual Info: PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Features 3 ns tS D 5 ns tPD Low power D The Cypress PALCE22V10 is a CMOS 181ĆMHz state machine Flash Ċ 10 ns military and industrial verĆ sions proĆ plemented with the familiar sumĆofĆproĆ electrical erasability and reprogramĆ

22V10D-10

Abstract: PALC22V10D-10JC 22V10D 22V10D-15 PALC22V10D PALCE22V10 R2170 V10D PALC22V10D-15PC v10d12
Contextual Info: fax id: 6007 1P AL C2 2V 10D For new designs, please refer to the PALCE22V10. PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns)

palce22v10 programming guide

Abstract: cypress palce22v10 programming guide CE22V10 cypress palce22v10 programming 22V10 22v10 pal CE22V1010 PALCE22V10-10JI PALCE22V10 PALCE22V10-10
Contextual Info: 22V10 PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device Features 5 ns tPD 181-MHz state machine • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

ce22v10

Abstract: 22V10-10 22v10 22V10-25 CERAMIC LEADLESS CHIP CARRIER PALCE22V10 PALCE22V10-10 PALCE22V10-15 PALCE22V10-25 PALCE22V10-5
Contextual Info: fax id: 6011 PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

22V10 PAL CMOS device

Abstract: 22V10-25 palce22v10 programming guide ce22V10 PALCE22V10-25 PALCE22V10-10PI 22v10 pal 22v10-10 CERAMIC LEADLESS CHIP CARRIER Pal programming 22v10
Contextual Info: fax id: 6011 1P AL CE 22 V10 PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device Features 5 ns tPD 181-MHz state machine • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

palce22v10 programming guide

Abstract: CE22V10 palce programming Guide PALCE22V10 PALCE22V10-10 PALCE22V10-15 PALCE22V10-25 PALCE22V10-5 PALCE22V10-7 PALCE22V10-10JI
Contextual Info: 1P AL CE 22 V10 PALCE22V10 Flash Erasable, Reprogrammable CMOS Pal Device Features 5 ns tPD 181-MHz state machine • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

Effio

Abstract: palce22v10 programming guide Pal programming 22v10 22v10 pal palce programming Guide 22V10-25 ce22V10 CERAMIC LEADLESS CHIP CARRIER Pal programming PALCE22V10
Contextual Info: ,.V. Ï. Ï. V. ^ynr' Æ PALCE22V10 CYPRESS Flash Erasable, Reprogrammable CMOS Pal Device Features 5 ns tPD 181-MHz state machine • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogramm ability

Contextual Info: 7 PLD20G10C C YPRESS • Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors Generic 24-Pin PAL Device 10 user-programmable output macrocells — Output polarity control — Registered or combinatorial operation — tpo = 7.5 ns

palc22v10d programming guide

Contextual Info: Flash Erasable, Reprogrammable CMOS PAL Device Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for electrical erasabllity and reprogrammablllty

palce22v10 programming guide

Contextual Info: PALCE22V10 CYPRESS Flash Erasable, Reprogrammable CMOS PAL Device Features 5 ns tpo 181-MHz state machine • Low power — 10 ns military and industrial versions 7 nstco — 90 mA max. commercial 10 ns 6 nsts 10 ns tpQ — 130 mA max. commercial (5 ns)

Contextual Info: V CYPRESS Features PALC22V10D Flash Erasable, Reprogrammable CMOS PAL Device — Proven Flash EPROM technology • DIP, LCC, and PLCC available — 7 J ns commercial version • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns

Contextual Info: _ PALC22V10D SEMICONDUCTOR Flash Erasable, Reprogrammable CMOS PAL Device • Advanced second-generation PAL ar­ chitecture • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (7.5 ns) • CMOS Flash EPROM technology for