CERAMIC PHOTOTRANSISTOR Search Results

phototransistor peak wave sensitivity 600 nm

Abstract: C8060
Contextual Info: Si Phototransistor KPT801C KPT801C Features • NPN phototransistor C7 +0.3 ø2.96 –0.1 Transparent epoxy resin Black Ceramic 2.0 • Low leak current +0.3 3.2 –0.2 • Ceramic package • Optical switches ø0.45 • Optical encoders ø0.3 15.5±1.0 Applications

transistor case To 106

Abstract: case to106 transistor 9003 VTT9002 VTT9003 to106 TO106 transistor
Contextual Info: .040" NPN Phototransistors VTT9002, 9003 Clear Epoxy TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

VTT9102h

Contextual Info: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

transistor case To 106

Abstract: TO-106 to106 VTT9002H
Contextual Info: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

Contextual Info: .040" NPN Phototransistors VTT9002H, 9003H Clear Epoxy TO-106 Ceramic Packag PACKAGE DIMENSIONS inch mm CASE 8 TO-106 (FLAT) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

transistor case To 106

Abstract: case to106 to106 VTT9102H VTT9103H
Contextual Info: .040" NPN Phototransistors VTT9102H, 9103H Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

transistor case To 106

Abstract: TO 106 transistor VTT9102 opto 101 case to106 VTT9103 TO106 transistor
Contextual Info: .040" NPN Phototransistors VTT9102, 9103 Epoxy Lensed TO-106 Ceramic Package PACKAGE DIMENSIONS inch mm CASE 9 TO-106 (LENSED) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high sensitivity NPN silicon phototransistor in a recessed TO-106 ceramic package.

Contextual Info: T-3mm Ceramic Base T-3mm Ceramic Base PRODUCT TREE INDEX ● ● ● ● ● Image next to part no. indicates cad file. 1. 2. 3. 4. Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support Product Gallery Opto-Electronic Components

packages smt

Abstract: OED-ST-23-TR
Contextual Info: SMT 2 Layer Ceramic SMT 2 Layer Ceramic INDEX ● ● ● ● ● Image next to part no. indicates cad file. Lumex Part Number 1. 2. 3. 4. 5. Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support Product Gallery Opto-Electronic Components

ceramic phototransistor

Contextual Info: SMT Ceramic - Wide Angle SMT Ceramic - Wide Angle INDEX ● ● ● ● ● Image next to part no. indicates cad file. Lumex Part Number 1. 2. 3. 4. 5. Product Table Table Footnotes Order Samples Stock/Price Request Sales and Tech Support Product Gallery Opto-Electronic Components

40KV DIODE

Contextual Info: 66004 Mii 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation OPTOELECTRONIC PRODUCTS

transistor military

Contextual Info: 66005 Mii 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature +16kV electrical isolation OPTOELECTRONIC PRODUCTS

transistor military

Abstract: x02C 16kV
Contextual Info: 66005 Mii 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature +16kV electrical isolation OPTOELECTRONIC PRODUCTS

40KV DIODE

Contextual Info: 66004 Mii 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation OPTOELECTRONIC PRODUCTS

66004-X01

Abstract: transistor all
Contextual Info: 66004 mu 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature 40kVdc electrical isolation OPTOELECTRONIC PRODUCTS

Contextual Info: 66005 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 12/01/03 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature

Contextual Info: 66005 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 12/01/03 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature

Contextual Info: 66004 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 09/22/03 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature

40KV DIODE

Abstract: X01C
Contextual Info: 66004 40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 09/22/03 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature

SG-2BC

Abstract: SG2B
Contextual Info: Photointerrupters Reflective KODENSHI SG-2BC DIMENSIONS (Unit : mm) The SG-2BC reflective sensor combines a GaAs IRED with a high-sensitivity phototransistor in a super-mini (4φ) ceramic package,reducing installation space. FEATURES •Compact (ø4mm) •High performance

Contextual Info: ms- HIGH VOLTAGE ISOLATOR 66147 OPTOELECTRONIC PRODUCTS DIVISION FEATURES 40KV Electrical Isolation Phototransistor Output Hermetic Ceramic Packaging High Common Mode Rejection BLACK DOT 2 LEADS z 4 DIA- leads RED ,DOT 3.005 2.975 • Ä APPLICATIONS Power Supply Feedback

Contextual Info: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package

Contextual Info: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package

16kv diode

Abstract: 16-mA
Contextual Info: Mii 66005 16kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE OPTOELECTRONIC PRODUCTS DIVISION Rev A 8/23/04 Features: Applications: • • • • • • • • High Reliability Rugged package Stability over wide temperature