CEP8 Search Results

Contextual Info: PRELIMINARY 9.8 MAX [.386] 5 TYPE PART NO. CEP810 10.5 MAX [.413] 8 C10199 rev. P1 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402] 1 8 3 5 2 7 4 6 Line 1.2 [.047]

Contextual Info: RoHS Compliant TYPE PART NO. CEP810 Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 10.5 MAX [.413] 8 C10141 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]

Contextual Info: RoHS Compliant TYPE PART NO. CEP810 Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 10.5 MAX [.413] 8 C10197 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]

Contextual Info: RoHS Compliant TYPE PART NO. CEP810 Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 10.5 MAX [.413] 8 C10203 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]

cep830g

Contextual Info: CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP830G 500V 1.5Ω 5A 10V CEB830G 500V 1.5Ω 5A 10V CEF830G 500V 1.5Ω 5A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840L 500V 0.8Ω 8A 10V CEB840L 500V 0.8Ω 8A 10V CEF840L 500V 0.8Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

CEP83A3

Abstract: CEP83A3G CEB83A3G CEB83A3
Contextual Info: CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS ON = 4.5 mΩ @VGS = 10V. RDS(ON) = 7.0 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

CEP80N75

Abstract: n-channel, 75v, 80a CEB80N75 CEF80N75 transistor vds rds 12 id 80a to220
Contextual Info: CEP80N75/CEB80N75 CEF80N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A CEF80N75 75V 13mΩ 80A 10V e 10V D Super high dense cell design for extremely low RDS(ON).

cep840g

Contextual Info: CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP840G 500V 0.85Ω 8A 10V CEB840G 500V 0.85Ω 8A 10V CEF840G 500V 0.85Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: C3174L Product Description REV B 470µH, 1.26:1 TR CEP8 Line Interface Transformer Meets requirements of IEC60950 for supplementary insulation, 250V working voltage A Customer Terminal #1 Indicator Coplanar with surface A +0.006"/-0.000" COEV C3174L XXXXX

TF210

Contextual Info: CEP8060LR/CEB8060LR PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 0 A , R ds o n =9.0 itiQ RDS(ON)=12.0m£i @ V gs =1 0 V . @ V gs= 5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.

B803A

Abstract: b-803a
Contextual Info: CEP803ALVCEB803AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 5 2 A , R ds o n =1 5m Q @ V g s =1 0V. RDS(ON)=25mfl @ V gs = 4 .5 V . • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.

DD 127 D TRANSISTOR

Contextual Info: CEP8060L/CEB8060L N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 60V , 80A , RDS ON =9.0mΩ @VGS=10V. RDS(ON)=12.0mΩ @VGS= 5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.

smd PULSE TRANSFORMER

Abstract: Pulse Transformer VAC sumida ift coil M-8G MC-102 transformer ADSL splitter CEP1311 RM6 transformer MIT-4115V EEH1313 MIT4115V
Contextual Info: For xDSL LINE TRANSFORMER & SPLITTER COILS For xDSL LINE TRANSFORMER & SPLITTER COILS RM4 EEH1313 RM6 EEH1617 CEP79 CEP1311 CEP811 EP1311 TEL For xDSL LINE TRANSFORMER & SPLITTER COILS PC CEP1311C CPFC85 Line Transformer • OUTLINE／概要 It is a xDSL line transformer which corresponds to the smaller foot

CEP80N75

Abstract: transistor vds rds 12 id 80a to220 ceb80n75 CEF80N75 CEI80N75
Contextual Info: CEP80N75/CEB80N75 CEI80N75/CEF80N75 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A 10V CEI80N75 75V 13mΩ 80A 10V CEF80N75 75V 13mΩ 80A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: CEP81A3/CEB81A3 PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 100A , RDS ON = 4.5mΩ @VGS=10V. RDS(ON)= 6.0mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.

CEP85A3

Contextual Info: CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS ON = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

CEP85N75

Contextual Info: CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP85N75 75V 12mΩ 86A 10V CEB85N75 75V 12mΩ 86A CEF85N75 75V 12mΩ 86A 10V e 10V D Super high dense cell design for extremely low RDS(ON).

P8060

Contextual Info: 1 .II 1 1 1 ,;i;, 1 1 mu CEP8060R/CEB8060R PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 8 0 .0 A , Rds on =1 O.OmQ D @V g s= 1 OV. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability.

Contextual Info: CEP8030LA/CEB8030LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS ON = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: RoHS Compliant TYPE Cd: Max 0.01 wt% Others: Max. 0.1 wt% 9.8 MAX [.386] 5 PART NO. CEP810 10.5 MAX [.413] 8 C10107 6x2.5 [.098] 8 5 1 4 sumida Part Number 9.0 MAX [.354] Country of Origin Date Code 4 1 8x0.7 [.028] 7.5 [.295] 2.5 [.098] 2.1 [.083] 10.2 [.402]

Contextual Info: CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS ON = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

c10107

Abstract: c14119 smd code 50K C10138 C10176 c10168 C10141 CEP810 vdsl transformer c14120
Contextual Info: ADSL Transformer< SMD Type: CEP Series> Type: CEP810 ◆ Product Description ・9.8x9.0mm Max. L×W ,10.5mm Max. Height. ◆ Feature ・xDSL line transformer. ・Ideally used in ADSL/VDSL Central Office. ・Approved by Broadcom,Conexant and Infineon. ・RoHS Compliance.

CEP83A3

Abstract: CEP83A3 equivalent CEP8
Contextual Info: CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 100A, RDS ON = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.