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CEP73A3G Contextual Info: CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS ON = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.	Original	CEP73A3G/CEB73A3G O-220 O-263 CEP73A3G	PDF

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CEP73A3G

Contextual Info: CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS ON = 9mΩ @VGS = 10V. RDS(ON) = 16mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.

Original

CEP73A3G/CEB73A3G O-220 O-263 CEP73A3G

PDF