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CEP13N10L Datasheets Context Search

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CEP13N10L Abstract: 50a65 Contextual Info: CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS ON = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.	Original	CEP13N10L/CEB13N10L O-220 O-263 CEP13N10L 50a65	PDF

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CEP13N10L

Abstract: 50a65
Contextual Info: CEP13N10L/CEB13N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 12.8A, RDS ON = 175mΩ @VGS = 10V. RDS(ON) = 185mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired.

Original

CEP13N10L/CEB13N10L O-220 O-263 CEP13N10L 50a65

PDF