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    CEM9 Datasheets (34)

    Chino-Excel Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEM9400
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 509.12KB 5
    CEM9400A
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 503.04KB 5
    CEM9407
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 507.97KB 5
    CEM9407A
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF 103.2KB 4
    CEM9410
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF 508.11KB 5
    CEM9410A
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF 514.22KB 5
    CEM9424
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF 39.54KB 5
    CEM9424
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 512.76KB 5
    CEM9425
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 513.09KB 5
    CEM9426
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF 511.16KB 5
    CEM9430
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 509.89KB 5
    CEM9430A
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 509.89KB 5
    CEM9433
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 510.67KB 5
    CEM9435
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 508.24KB 5
    CEM9435A
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 511.78KB 5
    CEM9436A
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 101.03KB 4
    CEM9445
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 80.64KB 4
    CEM9925
    		Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 158.59KB 5
    CEM9925
    		Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF 514.18KB 5
    CEM9926
    		Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF 517.28KB 5
    SF Impression Pixel

    CEM9 Price and Stock

    ETI Polam

    ETI Polam CEM9.10-24V-DC

    Contactor: 3-pole; NO x3; Auxiliary contacts: NO; 24VDC; 9A; CEM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CEM9.10-24V-DC 10 1
    • 1 $35.13
    • 10 $30.45
    • 100 $30.45
    • 1000 $30.45
    • 10000 $30.45
    		Buy Now

    ETI Polam CEM9.01-230V-50/60HZ

    Contactor: 3-pole; NO x3; Auxiliary contacts: NC; 230VAC; 9A; CEM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CEM9.01-230V-50/60HZ 4 1
    • 1 $23.64
    • 10 $20.48
    • 100 $20.48
    • 1000 $20.48
    • 10000 $20.48
    		Buy Now

    ETI Polam CEM9.10-220V-DC

    Contactor: 3-pole; NO x3; Auxiliary contacts: NO; 220VDC; 9A; CEM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CEM9.10-220V-DC 1
    • 1 $35.13
    • 10 $30.45
    • 100 $30.45
    • 1000 $30.45
    • 10000 $30.45
    		Get Quote

    ETI Polam CEM95.00-24V-DC

    Contactor: 3-pole; NO x3; 24VDC; 95A; CEM; screw terminals; H: 117mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CEM95.00-24V-DC 1
    • 1 $498.12
    • 10 $431.70
    • 100 $431.70
    • 1000 $431.70
    • 10000 $431.70
    		Get Quote

    ETI Polam CEM95.11-230V-50/60HZ

    Contactor: 3-pole; NO x3; Auxiliary contacts: NC + NO; 230VAC; 95A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME CEM95.11-230V-50/60HZ 1
    • 1 $181.79
    • 10 $157.55
    • 100 $157.55
    • 1000 $157.55
    • 10000 $157.55
    		Get Quote
    Find more CEM9 price and stock on Findchips.com

    CEM9 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    52A32

    Abstract: CEM9926A
    Contextual Info: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9926a52a32 PDF

    CEM9952A

    Contextual Info: CEM9952A Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		cem9952a PDF

    CEM9953A

    Contextual Info: CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V, -3.5A, RDS ON = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9953a PDF

    CEM9936A

    Contextual Info: CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS ON = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9936a PDF

    CEM9435

    Contextual Info: CEM9435 March 1998 P-Channel Enhancement Mode MOSFET FEATURES • - 3 0 V , - 5 . 1 A , R ds o n =55 itiQ RDS(ON)=105mQ @ V g s = -10 V . @ V gs = -4 .5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		cem943555itiq105mq PDF

    JD 250

    Abstract: 34A4S CEM9400A
    Contextual Info: CEM9400A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V , - 3 .4 A , R ds o n =1 30mQ @Vgs=-10V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability. • Surface Mount Package.


    OCR Scan     		cem9400a130itiqjd 25034a4s PDF

    CEM9947

    Contextual Info: CEM9947 Dual P-Channel Enhancement Mode MOSFET FEATURES • -20V, -3.5A, RDS ON =1 OOmQ @VGS=-10V. -1A, RDS(ON)=190mQ @VGS=-4.5V. • Super high dense cell design for extremely low RDS(ON). » High power and current handing capability. » Surface Mount Package.


    OCR Scan     		cem9947 PDF

    CEM9433

    Contextual Info: CEM9433 AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V , -5.4A , RDS ON =65mΩ @VGS=-4.5V. RDS(ON)=100mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability.


    Original     		cem9433 PDF

    c5v8

    Abstract: CEM9945
    Contextual Info: CEM9945 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 60V , 3.3A , RDS ON =100m Ω @VGS=10V. RDS(ON)=200m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		cem9945c5v8 PDF

    CEM9926A

    Contextual Info: CEM9926A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		cem9926a300ms PDF

    CEM9926

    Abstract: CEM9
    Contextual Info: CEM9926 Aug. 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		cem9926300mscem9 PDF

    CEM9939A

    Abstract: PF328
    Contextual Info: CEM9939A Nov. 2001 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 5 30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. -30V , -3.5A , RDS(ON)=100mΩ @VGS=-10V. RDS(ON)=160m Ω @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		cem9939a30atingpf328 PDF

    CEM9410

    Contextual Info: CEM9410 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 7A , RDS ON =30mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 1 2 3 4 N/C S S G High power and current handing capability.


    Original     		cem9410 PDF

    CEM9436A

    Contextual Info: CEM9436A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 6.2A , RDS ON =38m Ω @VGS=10V. RDS(ON)=52m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability.


    Original     		cem9436a PDF

    CEM9424

    Contextual Info: CEM9424 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V, -7.7A, RDS ON = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9424 PDF

    CEM9946

    Contextual Info: CEM9946 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 4.3A, RDS ON = 52mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9946 PDF

    Calex

    Abstract: T7779 CEM900 CEM801
    Contextual Info: C/LEX 5 to 6 WATT DC/DC CONVERTERS CEM900 SERIES SPECIFICATIONS Ail S pecifications Typical At N om inal Line. Full L oad, and 2 5 ° C U nless O therw ise N oted . 2:1 Input Range Efficiency to 80% Pi Input Filter Short Circuit Protection 100 kHz Switching Frequency


    OCR Scan     		cem900b2-38calext7779+1cem801 PDF

    CEM9936A

    Contextual Info: CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS ON = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9936a PDF

    52A32

    Abstract: CEM9926A
    Contextual Info: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9926a52a32 PDF

    CEM9436A

    Contextual Info: CEM9436A N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 6.2A, RDS ON = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9436a PDF

    CEM9435A

    Contextual Info: CEM9435A March 1998 P-Channel Enhancement Mode MOSFET 5 FEATURES -30V , -5.3A , RDS ON =50m Ω @VGS=-10V. RDS(ON)=90m Ω @VGS=-4.5V. D D D D 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.


    Original     		cem9435a PDF

    CEM9410

    Contextual Info: CEM9410 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 7A, RDS ON = 30mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9410 PDF

    CEM9435A

    Contextual Info: CEM9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS ON = 50mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		cem9435a PDF

    CEM9936

    Abstract: CEM9936A
    Contextual Info: CEM9936A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 5.4A , RDS ON =40mΩ @VGS=10V. RDS(ON)=55m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		cem9936acem9936 PDF