CEM8933 Search Results
CEM8933 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CEM8933 | Chino-Excel Technology | P-Channel Enhancement Mode Field Effect Transistor | Scan | 513.79KB | 5 | ||
| CEM8933A | Chino-Excel Technology | Dual P-Channel Enhancement Mode Field Effect Transistor | Original | 101.88KB | 4 |
CEM8933 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CEM8933AContextual Info: CEM8933A Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -5.3A, RDS ON = 58mΩ @VGS = -4.5V. RDS(ON) = 98mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
Original |
cem8933a | |
CEM8933Contextual Info: CEM8933 AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V , -4.3A , RDS ON =90mΩ @VGS=-4.5V. RDS(ON)=120mΩ @VGS=-2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. |
Original |
cem8933 | |
CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
|
Original |
o-251/to-252o-220/to-263ot-23ot-223+13 | |
CEM8933Contextual Info: A UGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES • -2 0 V , -4.3A , Rds on =90itiQ Rds(on)=1 40mQ Di @Vgs=-4.5V. Di D2 @Vgs=-2.5V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability. |
OCR Scan |
140itiqcem8933 |