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CEM4808 Datasheets (1)

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Chino-Excel Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CEM4808		Chino-Excel Technology	Dual N-Channel Enhancement Mode Field Effect Transistor	Original	PDF	101.16KB	4

CEM4808 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CEM4808 Contextual Info: CEM4808 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9A, RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	Original	cem4808	PDF
CEM4808 Contextual Info: CEM4808 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 5 30V, 9A, RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.	Original	cem4808	PDF
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	o-251/to-252 o-220/to-263 ot-23 ot-223 +13ot-89 2928-8j o-220fm cep50n06 cep83a3 equivalent cep83a3 cef02n6a cep6355 fqpf8n60c equivalent cef04n6 equivalent cep63a3 cep20n06 cep76139	PDF

Catalog Datasheet

Type

Document Tags

PDF

CEM4808

Contextual Info: CEM4808 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9A, RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

Original

cem4808

PDF

CEM4808

Contextual Info: CEM4808 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 5 30V, 9A, RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

Original

cem4808

PDF

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

Original

o-251/to-252 o-220/to-263 ot-23 ot-223 +13

PDF