CEM30 Search Results
CEM30 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CEM3060 | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Original | 103.65KB | 4 | ||
| CEM3082 | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Original | 383.66KB | 4 |
CEM30 Price and Stock
ETI Polam CEM300E.22-250V-AC/DCContactor: 3-pole; NO x3; Auxiliary contacts: NO x2 + NC x2; 300A |
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CEM300E.22-250V-AC/DC | 1 |
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ETI Polam CEM300E.22-415V-AC/DCContactor: 3-pole; NO x3; Auxiliary contacts: NO x2 + NC x2; 300A |
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CEM300E.22-415V-AC/DC | 1 |
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ETI Polam CEM300E.22-28V-AC/DCContactor: 3-pole; NO x3; Auxiliary contacts: NO x2 + NC x2; 300A |
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CEM300E.22-28V-AC/DC | 1 |
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ETI Polam CCEM300Terminal cover |
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CCEM300 | 1 |
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ETI Polam CEM300E.22-500V-AC/DCContactor: 3-pole; NO x3; Auxiliary contacts: NO x2 + NC x2; 300A |
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CEM300E.22-500V-AC/DC | 1 |
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CEM30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Crystal Osci Ilators Tkllfiüft iPUvO Crystal Clock Oscillators Sureface Mount Type CEM Series •>'J- X O perating Conditions O perating Temperature ftfFSgiEH Supply Voi tage -10 ~ +70 °C +2. 5V ± 5 % +3. 3V ± 5 % CEM20->U-r CEM30->'J-r im m a S p e c i f i c a t i o n s tt t H |
OCR Scan |
cem20-cem30-25ppm50ppnu+5 | |
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Contextual Info: CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS ON = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Original |
cem3083 | |
CEM3060Contextual Info: CEM3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 14A, RDS ON = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Original |
cem3060 | |
CEM3082Contextual Info: CEM3082 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS ON = 10.5mΩ @VGS = 10V. RDS(ON) = 15.0mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Original |
cem3082 | |
CEM3060Contextual Info: CEM3060 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 14A, RDS ON = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Original |
cem3060 | |
ns316Contextual Info: CEM3053 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -15A, RDS ON = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Original |
cem3053100msns316 | |
30V18A
Abstract: CEM3032
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Original |
cem303230v18a | |
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Contextual Info: Crystal Oscillators TEM-TYPE PARTS MODELING TEM Series PARTS MODELING Model TEM 3 0 A T _ -L ① ① ② ③ ④ ⑤ ②③④⑤ ②⑥ 50.000MHZ ⑦ シリーズ名 SERIES TEM TYPE 分類 TYPE 2②③④5 CEM20タイプ (2.5Vタイプ) = 3②③④_ |
Original |
000mhzcem20cem30100ppm+5 | |
CEM20AT5
Abstract: CEM20AT5-L CEM30AT-L CEM20 CEM30AT CEM30 CEM-20at5 80VPP CEM-20at5.
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Original |
cem20cem30cem20at5cem30at+5 | |
CEM35
Abstract: CEM32AT 80VPP CEM35AT
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Original |
80vpp100ppm170mhzcem30at+5 | |
CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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Original |
o-251/to-252o-220/to-263ot-23ot-223+13 | |
Calex
Abstract: G4010
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OCR Scan |
cem200b2-30calexg4010 | |
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Contextual Info: Crystal Oscillators 水晶発振器 Crystal Clock Oscillators クロッ Oscillators クロック オシレータ Sureface Mount Type 表面実装タイプ Type 表面実装タイプ Series シリーズ CEM |
Original |
cem20cem30cem20at5-lcem30at-l+1 |