CEG3456 Search Results
CEG3456 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| CEG3456 | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Original | 52.44KB | 5 | ||
| CEG3456 | Chino-Excel Technology | Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 115.05KB | 4 | ||
| CEG3456A | Chino-Excel Technology | N-Channel Enhancement Mode Field Effect Transistor | Original | 114.76KB | 4 |
CEG3456 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CEG3456
Abstract: 51A PF
|
Original |
CEG3456 CEG3456 51A PF | |
CEG3456AContextual Info: CEG3456A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS ON = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. (1,5,8)D Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Original |
CEG3456A CEG3456A | |
CEG3456AContextual Info: CEG3456A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 1,5,8 D 30V , 4.8A , RDS(ON)=38mΩ @VGS=10V. RDS(ON)=52m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). (4)G High power and current handing capability. |
Original |
CEG3456A CEG3456A | |
CEG3456Contextual Info: CEG3456 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.1A, RDS ON = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. (1,5,8)D Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Original |
CEG3456 CEG3456 |