CEP50N06
Abstract: CEB50N06
Contextual Info: CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS ON = 22mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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cep50n06/ceb50n06o-220o-263cep50n06+1ceb50n06
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CEP50N06
Abstract: CEB50N06 CEP50N06 equivalent relay rs-5
Contextual Info: CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 50A ,RDS ON = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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cep50n06/ceb50n06o-220o-263cep50n06+3ceb50n06cep50n06 equivalentrelay rs-5
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CEP50N06
Abstract: CEP50
Contextual Info: CEP50N06/CEB50N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS ON = 17mΩ (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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cep50n06/ceb50n06o-220o-263cep50n06+1cep50
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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o-251/to-252o-220/to-263ot-23ot-223+13ot-892928-8jo-220fmcep50n06cep83a3 equivalentcep83a3cef02n6acep6355fqpf8n60c equivalentcef04n6 equivalentcep63a3cep20n06cep76139
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