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TPCP8514
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 |
Datasheet
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TPCP8513
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 |
Datasheet
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TPCP8515
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
Datasheet
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TPCP8512
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Toshiba Electronic Devices & Storage Corporation
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8 |
Datasheet
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