CE SOT223 Search Results

FZT858

Abstract: fzt957
Contextual Info: SOT223 HIGH C U R R EN T HIGH PERFO RM AN CE T R A N S IS T O R S Pinout : 1-Base, 2&4-Collector, 3-Emitter r Type NPN FZT857 VCBO V v CEO V 'C(cont) A Pfot W hFE M in/M ax at Ic / V ce m A / Volts v CE(sat) Max at lc / Iß Volts mA fT Typ MHz Com plem ent

Contextual Info: SOT223 DARLINGTON TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter v CE sa t Max h -E Type V lc(cont) A Ptot W M in/M ax 160 140 2.0 2.0 FZT605 140 120 2.0 2.0 FZT604 120 100 2.0 2.0 v CBO v CEO V FZT600 fT Typ MHz Com plem ent - at Iq / V ce mA / Volts

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

sot89 AE pnp

Abstract: AE SOT223 PMBT4401
Contextual Info: 96 Surface Mount Devices General Purpose Transistors cont. Ratings hFE v CE(sat) min./max. at Iq /V Ce max. at l(j^B V mA/mA Pinout See Section VII v CEO V VCBO V •c Package BCW70 BC807W BC857W BCP52 BCX52 SOT-23 SOT-323 SOT-323 SOT-223 SOT-89 45 45 45

Contextual Info: FS3871-DS-13_EN Datasheet FEB 2010 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.3 FS3871 Fo LINEAR CHARGE MANAGEMENT IC FOR LITHIUM-ION AND LITHIUM-POLYMER FS3871 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation

BST60

Contextual Info: 98 Surface M ount Devices Darlington Transistors cont. Type % EG V Package v CE(sat) hFE Ratings v CBO V *C ' jnA1’^ 45 45 60 60 80 80 500 500 500 500 500 500 »T max. at lç/lg min. at Ig'V CE V mA/V MHz mA/mA Pinout See Section VII PNP (cont.) BSP60

NDT454P

Contextual Info: National June 1996 Semiconductor" N D T454P P-Channel Enhancement M ode Field Effect Transistor General Description Features These P-Channel e n h a n ce m e n t m o d e e ffect tra n s is to rs p ro p rie ta ry , hig h are pro d u ce d cell d e nsity, using

fs1117

Contextual Info: FS1117-DS-10_EN Datasheet MAR 2010 RT P r R ro U ef pe NE er rti ’ en es ce O nl y REV. 1.0 FS1117 Fo FO 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS1117 Fo FO RT P r R ro U ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation

FZT751

Abstract: FZT757 FZT705 FZT605 FZT651 FZT653 FZT655 FZT657 FZT753 FZT755
Contextual Info: SOT-223 NPN TRANSISTORS INCLUDING DARLINGTON h FE Type V CBO V C EO ^C(cont) •c m ^tot A W ^CE(sat) Min. MHz Ma x. at lc/lB Min. /Max. at Ic/V ce mA mA/Volts Volts Comple­ ment V V A FZT657 300 300 0.5 1.0 2.0 50/- 100/5 0.5 100/10 30 FZT757 FZT655 150

Contextual Info: FS8855-DS-26_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.6 Datasheet FS8855 500 mA LDO Linear Regulator FS8855 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: FS1117-DS-12_EN Datasheet OCT 2010 F P r R ro SC ef pe ' e r rti en es ce O nl y REV. 1.2 FS1117 Fo 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS1117 Fo F P r R ro SC ef pe ' e r rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

MARKING ZX SOT-23

Abstract: BC813 CMSH3-40 smd diode marking 5d SOD-323 2N29C7A BC48b BC337 N Channel Mosfet SOT-23 12W SOT-89 smd marking ol smd diode 5d SOD-323
Contextual Info: Sm all Signal Transistors U.S. Specification Preferred Series SOT-23 Case, 350mW TYPE NO. b v CBO b v c e o b v e b o *BVc £S MIN hpE ICBO VCB e v CE « íc m mm V c e (SAT) 9 lc ^ob »T m *OFF #,CE$ (V) <V) <"A) MIN MIN MAX m MIN General Purpose Amplifier/Switches

Contextual Info: FS8860-DS-19_EN Datasheet AUG 2009 F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.9 FS8860 Fo 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: FS1117-DS-13_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.3 Datasheet FS1117 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS1117 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

FS8860

Contextual Info: FS8860-DS-21_EN JAN 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 2.1 Datasheet FS8860 1.0A Adjustable & Fixed Voltage LDO Linear Regulator FS8860 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

Contextual Info: September 1996 N ational S e m i c o n d u c t o r 1' NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features P ow er SO T lo gic level N-C hannel e n h a n ce m e n t m o d e fie ld e ffect tra n s is to rs are pro d u ce d using

Contextual Info: Section S: Bipolar Transistors _ High Voltage Transistors ! 0 0 to 5 0 0 V olts SOT223 P!\IP High Voltage {Vq-o up BOOVI to Transistors Pinout Details: 1-Base, 2+4-Collector, 3-E m itter V CBO V CEO hFE lc Type V CE sat

TRANSISTOR b72

Abstract: motor IG 42c NDT452AP
Contextual Info: June 1996 National Semiconductor" N D T452A P P-Channel Enhancement M ode eld Effect Transistor G eneral Description Features These P-Channel e n h a n ce m e n t m o d e p o w e r field e ffect tra n s is to rs are pro d u ce d using N a tio n a l's p ro p rie ta ry , hig h cell de n sity, DM O S te ch n o lo g y.

til 112 optocoupler

Contextual Info: SIEMENS SFH6941 LOW CURRENT INPUT MINI OPTOCOUPLER Prelim inary Data Sheet FEATURES • Transistor Optocoupler In SOT223 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at lF=1 mA, V ce=0.5 V > Good CTR Linearity Versus Forward Current

Contextual Info: A Product Line of Diodes Incorporated DXT2012P5 ADV AN CE I N FORM AT I ON 60V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

Contextual Info: A Product Line of Diodes Incorporated DXT2010P5 ADV AN CE I N FORM AT I ON 60V NPN MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

Contextual Info: A Product Line of Diodes Incorporated DXTP19020DP5 ADV AN CE I N FORM AT I ON 20V PNP HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

Contextual Info: A Product Line of Diodes Incorporated DXTP03200BP5 ADV AN CE I N FORM AT I ON 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

Contextual Info: A Product Line of Diodes Incorporated DXT2013P5 ADV AN CE I N FORM AT I ON 100V PNP MEDIUM POWER TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm