CE DIODE Search Results

Contextual Info: ALPHABETICAL LIST OF SYMBOLS CD Q o P arasitic capac itan ce betw een drain and body Parasitic ca pacitan ce betw een drain and source o Parasitic ca pacitan ce betw een g ate and drain Q O C ds C qs Parasitic ca pacitan ce betw een g ate and source Cjss Input capacitan ce

Silicon Zener Diodes melf

Abstract: 1N5225 1N5262 DL5225B DL5262B
Contextual Info: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s

5R380CE

Abstract: IPA50R380CE 5R38 IPI50R380CE IPP50R380CE ID032 5r380
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor 1 IPP50R380CE, IPA50R380CE IPI50R380CE Description

Contextual Info: DL5225B thru DL5262B SILICON PLANAR ZENER DIODES Cathode Mark S tandard Z e n e r v o lta g e to e ra n ce is 620% . A d d s u ffix “A" fo r 610% to le ra n ce and su ffix “ B" fo r 65% tole ran ce. O th er tole ran ce, non sta n d a rd and h ig h e r Z e n e r vo lta g e s

BD400

Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Contextual Info: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce

1ZM13T5

Abstract: 1ZM18T5 zener t5 1ZM24 1ZM10T5 1ZM9.1 1ZM39 International Rectifier zener diodes 1ZM27
Contextual Info: International Rectifier Semiconductors Zener Diodes Zener Diodes R EFER EN CE T A B L E 1 W att a t M 'C - 5 % to leran ce Zener Voltage 5% Toleran ce Min. Max. l2 Max. tnA D C a t4 0 ‘ C Test Current hr mA Max. Dynam ic Impedance at I zt O hms Typ e Sto ck No.

1N5221

Abstract: 1N5281 75nC
Contextual Info: 1N5221 thru 1N5281 S IL IC O N P L A N A R Z E N E R D IO D E S Silicon Planar Zener Diodes S tandard Z e n e r v o lta g e to le ra n ce is ± 2 0 % .A d d s u ffix “A" fo r ± 1 0 % T o le ra n ce , su ffix “ B ' for ±5% tole ran ce, suffix “C " fo r ±2% to le ra n c e and suffix “ D ” for ±1% tole ran ce,

IPP50R280Ce

Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Contextual Info: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not

Current-Voltage Based Lookup-Table Diode Model

Contextual Info: Accurate Scalable Capacitance/Current-Voltage Based Lookup-Table Diode Model Ce-Jun Wei1, Yu Zhu, Hong Yin, D. Whitefield, Frank Gao, and Dylan Bartle SKYWORKS SOLUTION INC., 20 SYLVAN ROAD, WOBURN, MA 01801, USA 1 ce-jun.wei@skyworksinc.com ABSTRACT — A capacitance and Current look-up table based

1N5225

Abstract: 1N5262 SL5225 SL5226 SL5227 SL5228 SL5229 SL5230 SL5262
Contextual Info: SL5225 THRU SL5262 SILICON PLANAR ZENER DIODES, 500 mW, MINIMELF PACKAGE Silicon Planar Zener Diodes Standard Zener voltage tolerance is +20%. Add suffix "A” for ±10% to le ra n ce and su ffix “B" for ± 5 % tole ran ce. O th er A dm issible po w e r dissipation

3550C

Abstract: 5KP Series 3Kp Transistor tvs cr 3050B r-6 package
Contextual Info: Banned Substances Report Generated 05/19/05. Reference Report No.: CE/2005/52487A RoHS Compliance Product Type: Part Number Series: TVS Diodes R-6 package type 3KP series & 5KP series Test Result PART NAME NO. 1: PART NAME NO. 2: PART NAME NO. 3: BLACK PLASTIC BODY / WITH WHITE PRINTING (CE/2005/15132)

Contextual Info: DL4728 thru DL4764 SILIC O N PLAN AR PO W ER Z E N E R DIODES Cathode Mark fo r use in s ta b ilizin g and clipp ing circu its w ith high pow er rating. S tan da rd Z e n e r vo lta g e to e ra n ce is 610% . Add 0 2 . 55 0 2 . 35 suffix "A " fo r 65% to le ra n ce . O th er to le ra n ce s a va ilab le

2n2082

Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Contextual Info: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )

Bridge diodes

Contextual Info: Whal HEWLETT iL'ttM PACKARD GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 F eatu res • Gold Tri-M etal System For Improved Reliability • Low C ap acitan ce • Low S eries R esistan ce • H igh C utoff F req u en cy

thyristor control arc welding rectifier circuit

Abstract: YJ1600 AIR FLOW DETECTOR CIRCUIT DIAGRAM WR340 waveguide directional coupler power supply for magnetron microwave oven magnetron circuit diagram electronic choke for tube light power supply for magnetron YJ1600 wiring diagram motor autotransformer SCHEMATIC POWER SUPPLY kw
Contextual Info: SM1180T & TM060 SWITCHING POWER GENERATOR FOR 6 KW MAGNETRON TECHNICAL NOTE Issue June 2002 SM1180T & TM060 Dichiarazione di Conformità CE CE Declaration of Conformity Nome del Costruttore: Manufacturer’s Name: ALTER s.r.l Indirizzo del Costruttore: Manufacturer’s Address:

Contextual Info: NEWS Updates on the world of Hitachi semiconductors Hitachi Introduces High-Performance Variable-ce Diodes for Mobile Communications itach i h as d ev elo p ed highp erform an ce variable-capac­ itance d iod es to im prove th e p erform an ce o f m ob ile co m m u n i­

15N120CD1

Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
Contextual Info: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR

10j 5kV

Contextual Info: _SANKEN ELECTRIC CO LTD S5E D • 7^0741 GGOlDb? 4bû H S A K J 7 High Voltage Diodes for Distributor-less Ignitor I E x ce llen t heat re sista n ce for high tem perature operations I Anti-twist p ro c e sse d at time of resin molding along with ignition coil

2M265-M12

Abstract: FX950T power supply for magnetron autotransformer wiring diagram 3KW HV transformer t 250v t250v 3KW GENERATOR magnetron 10 kw model m330
Contextual Info: FX 950 T POWER SUPPLY UNIT FOR 3 KW MAGNETRON TECHNICAL NOTE Issue April 2004 FX 950 T CE Declaration of Conformity Dichiarazione di Conformità CE Manufacturer’s Name: Nome del Costruttore: Manufacturer’s Address: Indirizzo del Costruttore: ALTER s.r.l

Heft 10

Abstract: MATSUA RELAIS Funkamateur Siemens Halbleiter
Contextual Info: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der

Contextual Info: Wolfgang Sammet CE-Zeichen für Bauelemente? – Nein danke! Die Kennzeichnung von Produkten mit dem europäischen CE-Konformitätskennzeichen soll den freien Warenverkehr innerhalb der Europäischen Union EU vereinfachen. Prüfungen nach harmonisierten Normen stellen dabei in der

Contextual Info: Light Emitting Diodes LNP129041 Pandel Display Units RG Type • Structure  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d d te te ow p:/ fo d l /w low isc isc nan nan ing ww in on on ce ce fo

Contextual Info: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C

sony tuners

Abstract: C25 diode sony tuner radio 1T359 DIODE C2 7
Contextual Info: SONY CORP/COMPONENT PRODS MTE 0 3 f i E 3f l3 D 000200=1 7 ISONY 1T359 S O N Y . Silicon Variable C ap a cita n ce Diode Description The 1 T 3 5 9 is a variable cap a cita n ce diode for electronic tuning, designed for radio or T V tuners. t- o 7 - n Package Outline