CE 2766 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

castanet capacitor

Abstract: arcotronics castanet capacitor capacitor rse 104 arcotronics tantalum arcotronics 402 series capacitors
Contextual Info: N Arcotronics Castanet All-Tantalum Capacitors Series CA and CAE 47 juF - 1800 juF 125V - 6VDC -55°C to + 125°C This conveniently-packaged polar button unit em ploys a non-solid electrolyte, and h as a sintered tantalum anode. T h e anode is produ ced from a high ca p a cita n ce

transistor npn d 2058

Abstract: 2SC4398 2SA1678 BU 2058 transistors marking HJ SANYO SS 1001
Contextual Info: SANYO SEMI CONDUCTOR CORP 2SA1678, 2SC4398 2EE D 71*170711 00073b4 T T -3 7 -/3 7~ ~ 3s-n Ä ^ P N P/N P N Epitaxial Planar S ilico n Tra nsisto rs 2059 Switching Applications with Bias Resistances R1=10kfl, R2=10kß @2766 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

H560

Contextual Info: Extract from the online catalog MCR-SWS-U Order No.: 2766465 MCR threshold value switches, with adjustable hysteresis and relay/ transistor output, input signal 0.10 V Commercial data

Contextual Info: Extract from the online catalog MCR-SWS-I Order No.: 2766478 The illustration shows version MCR-SWS-U MCR threshold value switches, with adjustable hysteresis and relay/ transistor output, input signal 0 4 .20 mA

ic 2842

Contextual Info: HA-2842 Semiconductor September 1998 80MHz, High Slew Rate, High Output Current, Video Operational Amplifier File Number 2766.5 Features • S table at G ain s of 2 or G re a te r T he H A -2842 is a w ideb an d, high sle w rate, op era tiona l am p lifie r fea tu ring an o u tsta nding com b in a tio n o f speed,

Contextual Info: Features • • • • • • • • • • • • • Fast Read Access Tim e-100 ns Five-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 1024 Sectors (256 bytes/sector) Internal Address and Data Latches for 256 Bytes

Contextual Info: data sheet 1992 O avan tek ITA-06300 MagIC Silicon Bipolar MMIC 1.5 Gb/s Transimpedance Amplifier Chip July, 1990 A Subsidiary of Hewlett-Packard Features • • • • • • ITA-06300 Chip Outline High Transimpedance Gain: Az = 2800 ohms 69 dB High Data Rates: 1.5 Gb/s NRZ

CSA-C22

Abstract: DILM15 DILM7-DILM15 DILM7 moeller
Contextual Info: Contactor,3kW/400V,DC-operated Part�no. DILM7-01 24VDC Article�no. 276600 Program Product range Contactors Application Contactors for Motors Subrange Contactors up to 170 A, 3 pole Connection technique Screw terminals Pole

WESTINGHOUSE transistor

Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
Contextual Info: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE bbS3S31 □D27flflb 2^0 » A IAPX BSV64 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA

Contextual Info: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock

Contextual Info: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description[1] • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock

CY7C1351G

Abstract: CY7C1351G-100AXC
Contextual Info: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock

Contextual Info: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)

CY7C1350G

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

CY7C1350G

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

Contextual Info: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Functional Description Features • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)

Contextual Info: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)

90 nm CMOS

Contextual Info: CY7C1350G 4-Mbit 128 K x 36 Pipelined SRAM with NoBL Architecture 4-Mbit (128 K × 36) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self-timed output buffer control to eliminate the need

CY7C1351G

Abstract: CY7C1351G-100AXC
Contextual Info: CY7C1351G 4-Mbit 128 K x 36 Flow-through SRAM with NoBL Architecture 4-Mbit (128 K × 36) Flow-through SRAM with NoBL™ Architecture Features Functional Description • Can support up to 133-MHz bus operations with zero wait states ❐ Data is transferred on every clock

AN1064

Abstract: CY7C1347G
Contextual Info: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)

Contextual Info: CY7C1347G 4-Mbit 128 K x 36 Pipelined Sync SRAM 4-Mbit (128 K × 36) Pipelined Sync SRAM Features Functional Description • Fully registered inputs and outputs for pipelined operation ■ 128 K × 36 common I/O architecture ■ 3.3 V core power supply (VDD)