CE 2763 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: FS9168-015-DS-11_EN JAN 2013 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS9168-015 FS9168 standard code for digital clinical thermometer application FS9168-015 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

castanet capacitor

Abstract: arcotronics castanet capacitor capacitor rse 104 arcotronics tantalum arcotronics 402 series capacitors
Contextual Info: N Arcotronics Castanet All-Tantalum Capacitors Series CA and CAE 47 juF - 1800 juF 125V - 6VDC -55°C to + 125°C This conveniently-packaged polar button unit em ploys a non-solid electrolyte, and h as a sintered tantalum anode. T h e anode is produ ced from a high ca p a cita n ce

Contextual Info: SC IEN TIFIC / M INI-C IRC UITS ^C ^Z D • f lO b f lf il l 000 143 1 34S * S C C su rfa ce -m o u n t T-74-09-0] Frequency M ixers Models LEVEL 7 LRMS-2D + 7dBm LO, up to + 1dBm RF com puter-autom ated perform ance data typical production unit / for ctata of other models consult factory

0P213

Abstract: OP113GS OP-113 0p413 OP113GP OP-213 OP-413 analog devices OP- DICE CHARACTERISTICS
Contextual Info: AN AL OG D E V I CE S INC 51E D A N ALO G D E V IC E S □ • QfilbfiOO D 0 3 b h 5 7 fiT3 ■ ANA - t - 19 -io L o w N o is e i l o w D r if t Single-Supply Operational Amplifier OP-113/0P-213/0P-413 FEATURES Single-Supply Operation Low Noise: 6 n V /V Hz @ 1 kHz

A 27631 transistor

Abstract: 27631 A 27631 AP 27631 2763 LA 4224 2SC4224
Contextual Info: Ordering number: EN 2763 h SAW O No.2763 2SC4224 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications i Features . High breakdown voltage, high reliability . Fast switching speed tf:0.1us typ . Wide ASO . Adoption of MBIT process

Sprague Hall Effect

Abstract: 27631 A 27631 UGN-3131U gj hall effect hall 3131 3131H UGS-3131T Bipolar Hall UGS-3131U
Contextual Info: U G N -3131T U G N -3 131 U UGS-3131T 4J>SPRAGUE_ THE MARK OF RELIABILITY _ DATA SHEET 27631 ULTRA-SENSITIVE HALL EFFECT BIPOLAR SWITCHES FEATURES • • • • • • 4 .5 V to 24V O peration High R e lia b ility — No Moving Parts Constant O utput A m p litu d e

halleffect

Abstract: lt 719 LT 783 UGN 3075
Contextual Info: Data Sheet 27632.2* 3275 COMPLEMENTARY-OUTPUT HALL-EFFECT LATCH X Type UGN3275K latching Hall-effect sensors are bipolar integrated circuits designed for electronic commutation of brushless dc motors. They feature dual complementary outputs. The latches are

WESTINGHOUSE transistor

Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
Contextual Info: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3

AN1064

Abstract: CY14B256K
Contextual Info: CY14B256KA 256 Kbit 32K x 8 nvSRAM with Real Time Clock Features • ■ 256 Kbit nvSRAM ❐ 25 ns and 45 ns access times ❐ Internally organized as 32K x 8 (CY14B256KA) ❐ Hands off automatic STORE on power down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by

CY14B256K

Contextual Info: CY14B256KA 256 Kbit 32K x 8 nvSRAM with Real Time Clock 256 Kbit (32K x 8) nvSRAM with Real Time Clock Features • ■ 256 Kbit nvSRAM ❐ 25 ns and 45 ns access times ❐ Internally organized as 32K x 8 (CY14B256KA) ❐ Hands off automatic STORE on power down with only a small

CY14B256K

Contextual Info: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)

CY14B256K

Contextual Info: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)

Contextual Info: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)

irt 1260

Abstract: MX7582
Contextual Info: 19-2763; Rev 1; 6/96 y M /X IA I C a lib ra te d 4 -C h a n n e l 1 2 -B it A D C _ Features ♦ ♦ ♦ ♦ ♦ ♦ CHIP SELECT, READ, and WRITE inputs are included for easy microprocessor interfacing without additional logic. 2-byte, 12-bit conversion data is provided over an 8-bit

CY14B256KA-SP45

Abstract: Electronic timer. - TA 25 CY14B256K
Contextual Info: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)

CY14B256K

Contextual Info: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)

A 27631

Abstract: 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000
Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

A 27631

Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

Spansion S29GL256N

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

A 27631

Abstract: 27631 s29gl512 S29GLxxxN 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N
Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

Contextual Info: 3875081 G E SOLID STATE 01E 19732 D Optoelectronic S pecifications_ HA RR IS S E M I C O N D S E C T O R 37E D • LiBDSSTl 0 0 2 7 1 ^ 4 3 ■ HAS Photon Coupled Isolator H 1 1 G 1- H 1 1 G2 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected Phototransistor

upc2762t

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS «PC2762T, «PC2763T 3V-BIAS, MEDIUM-POWER HIGH-FREQUENCY SiMMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION ¿¿PC2762T and ¿¿PC2763T are silicon m onolithic integrated circuits designed for the transm ission TX stage