CDS 140 K Search Results

photoresistor LDR 03

Abstract: Photoresistor photo resistor LDR 07 photoresistor LDR photoresistor ldr 07 photoresistor LDR 1000 Light-Dependent Resistor features LDR 03 PHOTO RESISTOR photoresistor LDR 5mm CDS LDR 5mm
Contextual Info: TOKEN PGM CDS Photoresistors CDS Light-Dependent Photoresistors Light-Dependent Photoresistors for Sensor Applications Preview The cadmium sulfide CdS or light dependent resistor (LDR) whose resistance is inversly dependent on the amount of light falling on it, is known by many names including the photo resistor, photoresistor,

RJ2351

Abstract: LR36B15 sharp CCD Image Sensor RJ32S4AA0DT RJ32S3AA0DT RJ33N3AD0LT rj2361 LR38654 RJ2365DA0PB
Contextual Info: ROAD MAP FOR HIGH-RESOLUTION CCDs/CMOSs FOR DIGITAL CAMERAS/DIGITAL CAMCORDERS Imaging • Road Optical format Map for High-Resolution CCDs/CMOSs for Digital Cameras/Digital Camcorders ~ 2013 2014 2015 4K2K 1 type RJ5DY1BA0LT 13 110 kpixels CMOS 720p RJ23E3HA0LT

68A diode

Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
Contextual Info: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International

2SJ72

Abstract: 2SJ82 2SJ99 2SJ96 2SJ83 2SJ92 2SJ73 2SJ90 2SK146 2SJ102
Contextual Info: - 16 - s ít m £ m m ìà f t 2SJ70 B aL H aL 2SJ72 V * ft * (V) s , fë I* ft K 2SJ69 £ 1 V* (A) X P d /P c h 7* * (W) Ig s s (max) (A) Vg s (V) (min) (A) 551 M (max) V d s (A) (V) (Ta“25°C) tí «S (min) (max) V d s (V) (V) (V) Id (A) LF LN A

Contextual Info: EVALUATION KIT AVAILABLE MAX9277/MAX9281 General Description The MAX9277/MAX9281 are 3.12Gbps Gigabit Multimedia Serial Link GMSL serializers with 3- or 4-data lane LVDS input (oLDI) and a CML serial output programmable for 50Ω coax or 100Ω shielded twisted pair (STP) cable drive.

Contextual Info: EVALUATION KIT AVAILABLE MAX9277/MAX9281 General Description The MAX9277/MAX9281 are 3.12Gbps Gigabit Multimedia Serial Link GMSL serializers with 3- or 4-data lane LVDS input (oLDI) and a CML serial output programmable for 50Ω coax or 100Ω shielded twisted pair (STP) cable drive.

Contextual Info: EVALUATION KIT AVAILABLE MAX9277/MAX9281 General Description The MAX9277/MAX9281 are 3.12Gbps Gigabit Multimedia Serial Link GMSL serializers with 3- or 4-data lane LVDS input (oLDI) and a CML serial output programmable for 50Ω coax or 100Ω shielded twisted pair (STP) cable drive.

Contextual Info: EVALUATION KIT AVAILABLE MAX9277/MAX9281 General Description The MAX9277/MAX9281 are 3.12Gbps Gigabit Multimedia Serial Link GMSL serializers with 3- or 4-data lane LVDS input (oLDI) and a CML serial output programmable for 50Ω coax or 100Ω shielded twisted pair (STP) cable drive.

Contextual Info: EVALUATION KIT AVAILABLE MAX9277/MAX9281 General Description The MAX9277/MAX9281 are 3.12Gbps Gigabit Multimedia Serial Link GMSL serializers with 3- or 4-data lane LVDS input (oLDI) and a CML serial output programmable for 50Ω coax or 100Ω shielded twisted pair (STP) cable drive.

MAX9263

Abstract: MAX9264 prng IEC ACB symbols PJ 62 SPREAD-SPECTRUM SYSTEM
Contextual Info: 19-5644; Rev 1; 3/11 TION KIT EVALUA BLE IL AVA A HDCP Gigabit Multimedia Serial Link Serializer/Deserializer The MAX9263/MAX9264 chipset extends Maxim’s gigabit multimedia serial link GMSL technology to include highbandwidth digital content protection (HDCP) encryption

ne72218 v58

Abstract: NE72218 NE72218-T1 4E12
Contextual Info: NE72218 C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm

smd capa

Abstract: p33k
Contextual Info: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

Multi-device Optimization for Scalable Linear HEMT Model

Contextual Info: Multi-device Optimization for Scalable Linear HEMT Model Sagar Karalkar and Kanti Prasad Yu Zhu, Cejun Wei, Jerod Mason, and Dylan Bartle ECE Dept., University of Massachusetts Lowell Lowell, MA 01854 USA Sagar_karalkar@student.uml.edu Skyworks Solutions Inc., Woburn, MA 01801 USA

PD-441B

Contextual Info: INTERNATIONAL RECTIFIER HE D 4ÖSS4SE Data Sheet No. PD-441B T-39-15 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS _ Ç q l U - C H A N I M E L P O W E R M O S F E T s T O - 2 4 7 A C P A C K A G E I“R IRFP1 50 IRFP1 51 IRFP1 52

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

d29 08

Abstract: 48-PIN LR38616 P-QFP048-0707
Contextual Info: BACK LR38616 Timing Generator IC for 2 140 k-pixel CCD LR38616 DESCRIPTION PIN CONNECTIONS The LR38616 is a CMOS timing generator IC which generates timing pulses for driving 2 140 kpixel CCD area sensor and processing pulses. TOP VIEW SHTR STMD FR TST3 VDD4

KAI-1020CM

Abstract: KAI-1020M ccd board Circuit Schematic Diagram Electronic LM337 u1520 JESD22 KAI-1020 U1520 diode Kodak KAI-1020 LAT1032E
Contextual Info: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-1020 Image Sensor 1000 H x 1000 (V) Interline Transfer Progressive Scan CCD October 1, 2002 Revision 4 KAI-1020 Rev 4 • www.kodak.com/go/imagers 585-722-4385 imagers@kodak.com IMAGE SENSOR SOLUTIONS

Light-Dependent Resistor specification

Abstract: photoresistor ldr 07 photoresistor LDR 03 photoresistor LDR 5mm 5mm ldr photo resistor LDR 07 CDS LDR 5mm photoresistors cadmium sulfide photoresistor LDR 03 PHOTO RESISTOR
Contextual Info: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong

GaN 100 watt

Contextual Info: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

Contextual Info: 19-4968; Rev 3; 1/11 TION KIT EVALUA BLE A IL A V A Gigabit Multimedia Serial Link with Spread Spectrum and Full-Duplex Control Channel The MAX9259/MAX9260 chipset presents Maxim’s gigabit multimedia serial link GMSL technology. The MAX9259 serializer pairs with the MAX9260 deserializer

goodyear pliobond

Abstract: rosan clinch nut mil-s-8879 M45938 rosan nut rosan press nuts MIL-N-25027 MIL-S-7742 Rosan RPN 8-32 SC clinch nut REA-032
Contextual Info: Santa Ana Operations Press-Lock Fasteners FOR USE IN ALUMINUM, BRASS AND COPPER M F P N S C L M AY A L S O B E U S E D I N N O N - H A R D E N E D M I L D S T E E L A P P L I C AT I O N S PA RT NUMB ERS A L L OY STEEL STA INL ESS STEEL THREA D A ND SIZE

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN G id B = 6 .0 dB at f = 2 3 GHz i SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

Contextual Info: MOSFET IC SMD Type N-Channel MOSFET KRLML2502 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 Features 1 Available in Tape and Reel 0.55 Low Profile <1.1mm +0.2 1.6 -0.1 +0.2 2.8-0.2 N-Channel MOSFET 0.4 3 Ultra Low On-Resistance 2 +0.1 0.95-0.1 +0.2 1.9-0.2

toshiba 8893

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8893-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN GldB = 6 . 0 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C