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    MJ10025

    Contextual Info: 02E 0 0 5 2 0 6 1 1 5 9 50 MICROSEMI CORP/POWER □E D T - ^ 3 ' Z 9 tÊ JtH SISO □ □ Q Q 52Q CCC9002 'r X C T TECHNOLOGY 10 A, 950 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum


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    ccc9002emitter-15-milthickness-12ptc9000/mj10024+3ptc9001/mj10025ptc9002mj10025 PDF