CCA1 A2 Search Results

LC371000SP

Abstract: lc371000 CCA1 A2 SM20L
Contextual Info: Ordering number: EN3K5086A CMOS LSI LC371000SP, SM-10/LC371000SP, SM-20LV S A \Y O 1 MEG 131072 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371000SP, SM-10 and LC371000SP, SM-20LV are 1048576-bit M ask Program m able Read Only

RAPC722X

Abstract: 100uF 50v 50V 100uf upd168804 10uF 50V 10UF/50V B7B-XH-A MBRS260T3 BOARD CCB2 upc1688
Contextual Info: 5 4 3 2 1 D D P1 TEST_PIN TP1 TEST_PIN LED1 K R1 1 2 NC1 Minus Plus NC2 Thermal + C70 10uF/50V + C71 10uF/50V + C1 10uF/50V C3 D2 0.1uF/50V C53 0.1uF/50V MBRS260T3 + 10uF/50V_UM 36V ZD1 LUXEON_K2 W N1 TEST_PIN A DC_IN A + C69 +12V + K 0.33 4 3 5 uPA2756GR

PD168804

Abstract: 2SK2414Z 48-PIN 900 v 9 amp mosfet TO-3
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD168804 4 CH BUCK OR BOOST SELECTABLE CONSTANT CURRENT DRIVER IC WITH EXTERNAL POWER MOSFETS DESCRIPTION μ PD168804 is a 4 channel constant current driver IC. One from “Buck” or “Boost” topology is selectable by the

ra2t

Abstract: a0191 SOP28 Package
Contextual Info: Ordering number: EN 4484B CMOS LSI No. 4484B i SAHYO LC3564RM.RT-1 OLV/12LV/15LV 64K 8192 words x 8 bits SRAM • Common-pin input/outputs, 3-state output Overview The LC3564RM,RT are 8192-word x 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They oper­

PD168804

Abstract: 2SK2414Z 48-PIN
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D43256

Abstract: PD43256B-AX
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B-X 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD43256B-X is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. This device is an extended-operating-temperature version of the µPD43256B (X version, –25 to +85 °C). And A and B

Contextual Info: Memory ICs 256k 32k x 8 Bit SRAM BR62256F-70LL The BR62256F-70LL is a 32768 word x 8 bit asynchronous high-speed CMOS static RAM. it runs on a 5V single power supply, and in addition to its low power consum ption and high-speed, its low standby current enables its use

D1044

Abstract: QFP44 TDA8767
Contextual Info: Objective specification Philips Semiconductors 12-bit high-speed analog-to-digital converter TD A 8767 APPLICATIONS FEATURES 1 2 -bit • High-speed analog-to-digital conversion for resolution Sampling rate up to 30 MHz - Video signal digitizing -3 dB bandwidth of 18 MHz

Contextual Info: Ordering number : EN-% 50B7A | CMOS LSI LC371100SP, SM-10/LC37110OSP, SM-20LaT I s /m ro 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-bit M ask Program m able Read O nly

d27c1024

Abstract: PD27c1024 uPD27C1024
Contextual Info: NEC //PD 27C 1024 6 5 ,5 3 6 X 16-BIT CMOS UV EPROM NEC Electronics Inc. Description Pin Configuration The^PD27C1024 is a 1,048,576-bit, ultraviolet erasable and electrically programmable ROM fabricated with an advanced CMOS process for substantial power savings.

Contextual Info: ¡Ordering number : EN%5088A~ CMOS LSI LC3721OOPP, PM-10/LC3721OOPP, PM-20LV 2 MEG 262144 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC372100PP, PM-10 and LC372100PP, PM-20LV are 2 0 9 7 1 5 2 -b it M ask Program m able Read Only

4327

Abstract: LC36256ALL LC36256ALL-10 LC36256ALL-12 LC36256ALL-70 LC36256ALL-85 LC36256AMLL-10 LC36256AMLL-12 LC36256AMLL-70 LC36256AMLL-85
Contextual Info: [Ordering number : EN4327 Asynchronous Silicon Gate CMOS LSI LC36256ALL, AMLL-70/85/10/12 No. 4327 S A \Y O 256 K 32768 words x 8 bits SRAM Overview Package Dimensions The LC36256ALL, AM LL-70/85/10/12 are fully asynchronous silicon gate CMOS static RAMs with an

JPD447-1

Abstract: LPD447 UPD447D PO447
Contextual Info: N EC NEC Microcomputers, Inc. ^ PD 447 /i. PD447-1 fx PD447-2 fo liT ' 2048 x 8 BIT ST A T IC C M O S RAM D E S C R IP T IO N The ¿¿PD447 is a high speed, low power, 2048 word by 8 bit static CMOS RAM fabricated using an advanced silicon gate CMOS technology. A unique circuitry tech­

Contextual Info: April 1997 Preliminary % M i c r o Linear ML2656 10BASE-T Multi-port Repeater 6 GENERAL DESCRIPTION FEATURES The ML2656 is an integration of six (6) 10BASE-T transceivers, designed for repeater applications. The M L2656 contains a TTL-compatible microprocessor

uPD447-2

Contextual Info: N E C M i c r o c o m p u t e r s , I n c . ^ p d u 7 ^ /x PD447-1 H PD447-2 2048 x 8 BIT STATIC CMOS RAM D E S C R IP T IO N The /jPD447 is a high speed, low power, 2048 word by 8 bit static CMOS RAM fabricated using an advanced silicon gate CMOS technology. A unique circuitry tech­

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ,uPD29F008L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE Description The ¿iPD29F008L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration. It possesses an automatic single Byte program function and an automatic block erase function that

aml 10 series

Abstract: c 4663 LC36256AL LC36256AL-10W LC36256AL-12W LC36256AL-70W LC36256AL-85W LC36256AML-10W LC36256AML-12W LC36256AML-70W
Contextual Info: Ordering number: ENiK4663 Asynchronous Silicon Gate CMOS LSI no.s* I/_ LC36256AL, AML-70W/85W/1OW/12W SANYO 256 K 32768 words x 8 bits SRAM Preliminary Overview Package Dimensions The LC36256AL, AML-70W/85W/10W/12W are fully asynchronous silicon gate CMOS static RAMs with an

D43256

Abstract: D43256B PD43256BCZ-85L PD43256BCZ-70L PD43256BGU-70LL UPD43256 pd43256bc
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µ PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

D43256B

Abstract: PD43256BCZ-70L uPD43256BCZ-70LL PD43256B PD43256BGU uPD43256 43256B-B PD43256BCZ-85L d4325 PD43256BGU-70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

Contextual Info: SEC /¿PD27C512G/G 5 2 4 2 8 8 B IT C M O S ONE T IM E PR O M DESCRIPTION The fiP027C512C/G is a 524 288 bit 65 536 x 8 bit one tim e programmable read-oniy memory (OT PROM). It operates from a single +5 V power supply, making it ideal for microprocessor applications. It is fabricated using an

NEC d446c

Abstract: d446c-2 d446c PD446C d446c-2 RAM PD446C-3 D446* nec D446* RAM MPD446C-3 pd446
Contextual Info: SEC NEC Electronics Inc. ¿¿PD446 2 ,0 4 8 X 8-B IT STATIC CMOS RAM Revision 3 Description Pin Configuration The ¿¿PD446 is a high-speed, low-power, 2048-word by 8bit static CMOS RAM fabricated with advanced silicongate CMOS technology. A unique circuitry technique

84-PIN

Abstract: ML2656CQ ic RH4
Contextual Info: April 1997 Preliminary ML2656 10BASE-T Multi-port Repeater 6 GENERAL DESCRIPTION FEATURES The ML2656 is an integration of six (6) 10BASE-T transceivers, designed for repeater applications. The ML2656 contains a TTL-compatible microprocessor interface for status and control.

D449c

Abstract: HPD449C-111L
Contextual Info: NEC NEC Electronics Inc. mP D 4 4 9 2 , 0 4 8 X 8 -B IT STATIC C M O S RAM Revision 4 D escrip tion Pin C on fig u ratio n The ^PD449 is a high-speed, tow-power, 2048-word by 8bit sta tic CMOS RAM fabricated w ith advanced s ilic o n ­ gate CMOS technology. A unique circ u itry technique