CC 4093 N Search Results

High current drive using 4 X NJM3770A

Abstract: application note IC 4093 datasheet of IC 4093 IC 4093 BE 4093 oscillator IC1-4093 schmitt trigger 4093 EQUIVALENT TRANSISTOR bc547 IC1 4093
Contextual Info: High current drive using 4 X NJM3770A The absolute max current provided from New JRC’s stepper motor drivers is 1.8 A NJM3770A . Sometimes higher-current drive capability is needed. A solution which can give up to 3 A total current/phase is described in

72V841

Contextual Info: PRELIMINARY 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9 IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841 Ii t e g i a t e d D e v ic e T e c h n o i> g y , l i e . FEATURES: • The IDT72V801 is equivalent to two IDT72V201 256 x 9 FIFOs

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

72V841

Contextual Info: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9 Integrated Device Technology, Inc. FEATURES: • The IDT72V801 is equivalent to two IDT72V201 256 x 9 FIFOs • The IDT72V811 is equivalent to two IDT72V211 512 x 9 FIFOs

IC 4093 pin configuration

Abstract: IC 4093 pin block diagram IC 4093 14 pin configuration IC 4093 time counter EM 4093 PAEAA act da hen nw IC 2 5/LKB-0722KA 72V841 72V851
Contextual Info: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 X 9, DUAL 512 X 9, DUAL 1,024 X 9, DUAL 2,048 X 9, DUAL 4,096 X 9 and DUAL 8,192 X 9 FEATURES: • • • • • • • • • • • • • • • IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841 IDT72V851 Each of the two FI FOs designated FI FO A and FI FO B contained in the

cmos 4093 PIN DIAGRAM

Abstract: CC 4093 N 4093 pin configuration 4093 DATASHEET 4093 power on reset 4093 cmos 4093 4093 be 72V811 4093 N
Contextual Info: IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841 IDT72V851 3.3 VOLT DUAL CMOS SyncFIFO DUAL 256 X 9, DUAL 512 X 9, DUAL 1,024 X 9, DUAL 2,048 X 9, DUAL 4,096 X 9 and DUAL 8,192 X 9 FEATURES: • • • • • • • • • • • • • • • Each of the two FIFOs designated FIFO A and FIFO B contained in the

72V841

Abstract: IDT72V201 IDT72V211 IDT72V221 IDT72V231 IDT72V241 IDT72V801 IDT72V811 IDT72V821 IDT72V831
Contextual Info: PRELIMINARY IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841 3.3 VOLT DUAL CMOS SyncFIFO DUAL 256 X 9, DUAL 512 X 9, DUAL 1,024 X 9, DUAL 2,048 X 9 and DUAL 4,096 X 9 FEATURES: • • • • • • • • • • • • • • Each of the two FIFOs designated FIFO A and FIFO B contained in the

72V841

Abstract: IDT72V201 IDT72V211 IDT72V221 IDT72V231 IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841
Contextual Info: FEATURES: • • • • • • • • • • • • • • • • IDT72V801 IDT72V811 IDT72V821 IDT72V831 IDT72V841 IDT72V851 3.3 VOLT DUAL CMOS SyncFIFO DUAL 256 X 9, DUAL 512 X 9, DUAL 1,024 X 9, DUAL 2,048 X 9, DUAL 4,096 X 9 , DUAL 8,192 X 9

72V841

Contextual Info: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 X 9, DUAL 512 X 9, DUAL 1,024 X 9, DUAL 2,048 X 9 and DUAL 4,096 X 9 Each of the two FI FOs designated FI FO A and FI FO B contained In the IDT72V801 /72V811/72V821 /72V831 /72V841 has a 9-bit input data port (DAO - DA8, DB0 - DB8) and a9-blt output data port (QA0 -QA8, QB0 - QB8).

IC 4093

Abstract: K9K1G08U0M-YIB0 K9K1G08U0M K9K1G08U0M-YCB0 K9K1G08U0M-YCB0T
Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added

IC 4093 pin configuration

Abstract: pin diagram ic 4093 Tri-State Buffer CMOS ci 4093 72V841
Contextual Info: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 x 9, DUAL 512 x 9, PRELIMINARY IDT72V801 DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9 ¡DT72V821 IDT72V831 ìitegiatsd Devie Technology, lie. IDT72V841 FEATURES: • The IDT72V801 is equivalent to two IDT72V201 256 x 9 FIFOs

Contextual Info: K9F1208Q0A-DCB0,DIB0 K9F1208U0A-YCB0,YIB0 K9F1208U0A-DCB0,DIB0 K9F1216Q0A-DCB0,DIB0 K9F1216U0A-YCB0,YIB0 K9F1216U0A-DCB0,DIB0 Preliminary K9F1208U0A-VCB0,VIB0 FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History

IC 4093

Abstract: K9K1G08U0A K9K1G16U0A 63FBGA K9K1G08Q0A K9K1G08Q0A-GCB0 K9K1G08U0A-YCB0
Contextual Info: Preliminary K9K1G08Q0A K9K1G08U0A K9K1G16U0A FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Mar. 17th 2003 Preliminary 0.1 1. Note is added. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

Contextual Info: K9F1208U0M-YCB0, K9F1208U0M-YIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History History Draft Date Remark 0.0 1. Initial issue Oct. 27th 2000 Advanced Information 0.1 1. Renamed GND input pin # 6 on behalf of SE (pin # 6) - The SE input controls the access of the spare area. When SE is high,

Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added

inverter BC547

Abstract: IC 4093 IC 74HC00 Bc547 inverter MC 4093 74HC00 CC 4093 N datasheet of IC 4093 IC1 4093 BC547
Contextual Info: ＮＪＭ３７７０Ａを使用した高電流ドライブ ＮＪＭ３７７０Ａの絶対最大電流は１．８Ａです。場合によっては、高電流ドライブ機能が必要になります。 この章では、最大3A／相の電流を得られる方法について説明します。これは、各相ごとに、２本の別巻線をもつ

Halbleiterbauelemente DDR

Abstract: diode BZW 70-20 VEB mikroelektronik Datenblattsammlung mikroelektronik DDR aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung mikroelektronik applikation information applikation mikroelektronik "halbleiterwerk frankfurt"
Contextual Info: 9 ¡M i n M W V S I I V I S N l l ¥ a Die vorliegenden Datenblätter dienen als Informationsmaterial für Geräteentwickler und Konstrukteure, Sie beinhalten Informationen über Halbleiterbauelemente des in "den Listen elektronischer Baulemente eingestuften Sortiments.

EFB01

Abstract: ci 4093 equivalent 1172V EM 4093 72V841
Contextual Info: 3.3 VOLT DUAL CMOS SyncFlFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9 FEATURES: • T h e IDT72V801 is e q u iva le n t to tw o IDT72V201 256 x 9 FIFO s • The IDT72V811 is equivalent to two IDT72V211 5 1 2 x 9 FIFOs • The IDT72V821 is equivalent to two IDT72V221 1,024 x 9 FIFOs

synergy microwave vco

Abstract: adf4150hv ADu7020 VCO 1ghz from synergy part no DCYS100-200-12 RF 1022 E Top Octave Synthesizer 1.5GHZ VCO cmos 4093 ADF4156 DB31
Contextual Info: High Voltage Fractional-N / Integer-N PLL Synthesizer ADF4150HV Preliminary Technical Data FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer High voltage charge pump: 6 V to 30 V RF bandwidth to 4.4 GHz Programmable divide-by-1/2/4/8 or 16 outputs

transistor a1512

Contextual Info: IS26F 080 A I S 2 6 F 1 60 8M/16M-bit Serial Flash Memories with 2-pin NXS Interface Features • Tailored for Portable and Mobile Media-Storage ■ 8/16-megabits of NexFLASH Serial Memory -2,048/4,096 sectors of 536 bytes each -S im p le commands: reset, read, write, ready/busy

transistor a1512

Abstract: sa1512
Contextual Info: IS26F080A IS26F160 8M-BIT AND 16M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE JU N E 1998 FEATURES • Tailored for Portable and Mobile Media-Storage - Ideal for portable/mobile applications that transfer and store data, audio, or images - Removable Serial Flash Module package option

ADu7020

Abstract: 1.5GHZ VCO ADF41xx mtld VCO 1ghz from synergy part no DCYS100-200-12
Contextual Info: High Voltage Fractional-N / Integer-N PLL Synthesizer ADF4150HV Preliminary Technical Data FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer High voltage charge pump: Vp = 6 V to 30 V Tuning Range 1.0V to 29V or +/- 1V from Vp supply rails

a1-a10

Contextual Info: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added

Contextual Info: K9F1208U0M-YCB0, K9F1208U0M-YIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Oct. 27th 2000 Advanced Information 0.1 1. Renamed GND input pin # 6 on behalf of SE (pin # 6)