CB3 19 Search Results

M368L6423ETN-CB0

Abstract: 42H33H DDR266 DDR333 4e86
Contextual Info: SERIAL PRESENCE DETECT M368L6423ETN-CB0/CA2/CAA/CB3 Organization :64Mx64 Composition :32Mx8x16ea Used component part # :K4H560838E-TCB0/CA2/CAA/CB3 # of rows in module:2 Rows # of banks in component :4 banks Feature :1,250 mil height & double sided component

DDR200

Abstract: DDR266 DDR333 B341H
Contextual Info: SERIAL PRESENCE DETECT M381L3313CT1-CA0/CB0/CA2/CB3 Organization :32Mx72 Composition :16Mx8*18pcs Used component part # :K4H280838C-TCA0/B0/A2/B3 # of rows in module:2 rows # of banks in component :4 banks Feature :1,250mil height & double sided component

ADC-200

Abstract: ADC200-20 EN50081-1 EN50082-1 IEC801-3 IEC801-4 ADC-100
Contextual Info: pico ADC-200 High speed Analog to Digital Converter User Manual Version 1.0 rev 2 by A D Tong Pico Technology Limited 149-151 St Neots Road Hardwick Cambs CB3 7QJ GB Tel: 44-1954-211716 Fax: 44-1954-211880 E-Mail: sales@picotech.co.uk Copyright 1996 Pico Technology Limited

D4364c-15L

Abstract: NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15
Contextual Info: Technical Report UCAM-CL-TR-536 ISSN 1476-2986 Number 536 Computer Laboratory Low temperature data remanence in static RAM Sergei Skorobogatov June 2002 15 JJ Thomson Avenue Cambridge CB3 0FD United Kingdom phone +44 1223 763500 http://www.cl.cam.ac.uk/ c 2002 Sergei Skorobogatov

D 1163 A

Abstract: M37478M8
Contextual Info: Oscillating frequency correlation H37478M0 - 102 VS. ( U K standard ) FCR8.0HCS Vdd NO. C M M37478MB 5 m era - CB3 CB) TDK standard 1 8.0157 8.0317 -.0160 2 7.9883 8.0039 -.0155 3 7.9859 8.0031 -.0171 4 7.9865 8.0006 -.0140 5 7.9859 8.0012 -.0153 6 8.0070

A3000

Abstract: H541 LP3000
Contextual Info: INDEX A31940707WR Series A3000, LP3000 & CB3000 Single Row Terminal Blocks SPECIFICATIONS LP30110507 Rating: A3: 30A, 600V* LP3: 30A, 150V CB3: 30A, 600V Center Spacing: .437” or 7/16” 11.10 mm Wire Size: #12-22 AWG CU Screw Size: #6-32 zinc plated philslot screws.

M312L6523DZ3-CB3

Abstract: DDR333 DDR400 M312L6523DZ3 K4H510838D-ZCB3 M312L6523 27-DDR
Contextual Info: SERIAL PRESENCE DETECT M312L6523DZ3-CB3/CCC Organization :64M x 72 Composition :64M x 8 * 9ea Used component part # :K4H510838D-ZCB3/CC # of rows in module:1 Row # of banks in component :4 banks Feature :1,125mil height & double sided Refresh :8K/64ms Bin Sort : B3 DDR333@CL=2.5 , CC(DDR400@CL=3)

csa 47235

Abstract: copper stud torque chart Double Row Terminal Blocks E62622
Contextual Info: Terminal Blocks - Single Row Series A3000, LP3000 & CB3000 Single Row Terminal Blocks A31940707WR SPECIFICATIONS Rating: A3: 30A, 600V* #12-22 AWG LP3: 30A, 150V #12-22 AWG CB3: 30A, 600V #12-22 AWG Wire Range: #12-22 AWG CU Center Spacing: 0.437” or 7/16” 11.10mm

KV1235

Abstract: KV1235Z KV1236 KV1851 KV1226 TOKO SOT23L-3 KV1236Z KV1310A-2 KV1260 KV1301A-2
Contextual Info: DIODES 24 TOKO 9 ' 4 * - t- Variable Capacitance Diodes Application For AM K f f l& S iJ- f t 25 KV1230Z vco 1 element KV1234Z Tun. 4 element 2% CB4-8 KV1235Z Tun. 3 element 2% CB3-6 KV1236Z Tun. 1% CB2-4 KV1260 Tun. 2 element, 1 chip 1% CB1-3 KV1260-2 Tun.

CON at36a

Abstract: AT36A DIODE d2 DIODE A4 STEVAL-ISV004V2 DIODE d3 D1 diode 026l2 STEVAL-IS DSASW003737
Contextual Info: 5 4 TP1 3 2 VIN V_OUT C13 4.7uF D3 DIODE VIN 1 V_OUT C12 4.7uF C6 4.7uF TEST POINT VCC D2 C5 D4 1uF TRISIL TEST POINT V_OUT D1 DIODE 1 1 TP2 C11 1uF D5 TRISIL DIODE TP3 1 D CB1 C1 22nF VIN CB3 L1 C3 22nF L3 47uH VIN 47uH L3 2 2 VIN V_OUT L1 D TEST POINT J35

MA7805

Abstract: SW dip-4 4046 Frequency synthesizer BF199 SW-DIP-4 DIP41 HEF 4060 SW-DIP hef4059 bf199 equivalent
Contextual Info: C1 0.1 C100 1nF C4 0.1 8 7 6 5 8 7 6 5 S4 SW DIP-4 S5 SW DIP-4 1 2 3 4 S3 SW DIP-4 S6 SW DIP-4 VCC 1 2 3 4 CB15 0.1 MA7805 1 2 3 4 CB16 0.1 1 2 3 4 R101 50 8 7 6 5 8 7 6 5 INPUT CB2 0.1 CB1 0.1 R100 15k CB3 0.1 13 14 24 12 7 8 9 10 15 16 17 18 23 Q1 BF199

ACTS630MS

Abstract: DB10
Contextual Info: ACTS630MS S E M I C O N D U C T O R Radiation Hardened EDAC Error Detection and Correction January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96721 and Harris’ QM Plan

transistor code def 25

Abstract: ACS630MS DB10
Contextual Info: ACS630MS S E M I C O N D U C T O R Radiation Hardened EDAC Error Detection and Correction Circuit January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in

CTS CB2

Abstract: ACTS630MS DB10
Contextual Info: ACTS630MS TM Radiation Hardened EDAC Error Detection and Correction January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96721 and Intersil’s QM Plan

ACS630MS

Abstract: DB10 db3 smd
Contextual Info: ACS630MS Radiation Hardened EDAC Error Detection and Correction Circuit January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96711 and Intersil’ QM Plan

Contextual Info: « INVERTER GRIN/PHRSE vs. FREQUENCY CHRRRCTERISTICS » IC : KS57C21308 Ft - 21.7 [MHz] Vdd : 3 [V] P.M - 116.4 Cdeg] Freq. [MHz] — > 0 CdB] 5»JÌMl KS57C21308 - 1 FCR4 .19M5 Vdd- 3 CV] Flg.a'd Ta* 20 Cdeg] T y p ical 7 5 3 1 -1 7 S a. V1H/V1L CV3 b. V2H/V2L

MAX9959DCCQ

Abstract: MAX9959FCCQ max9959 DPSN 96 Motorola DPS MAX9959F dpsN
Contextual Info: 19-3931; Rev 4; 2/11 KIT ATION EVALU E L B A AVAIL 25V Span, 800mA Device Power Supply DPS Features The MAX9959 provides all the key features of a device power supply (DPS) common to automatic test equipment (ATE) and other instrumentation. Its small size,

Contextual Info: ACS630MS Semiconductor Radiation Hardened EDAC Error Detection and Correction Circuit January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96711 and Harris’ QM Plan

CDFP3-F28

Abstract: ACS630MS
Contextual Info: ACS630MS Radiation Hardened EDAC Error Detection and Correction Circuit January 1996 Features Pinouts • D evices Q M L Q ualified in A c c o rd a n c e w ith M IL -P R F -3 853 5 • D etailed E lectrical and S creen in g R e q u irem en ts a re C o n tained in

Contextual Info: IC dependence of oscillating characteristics uPD?89417 FCR5.0HC5 - STO Room Temp. Vdd [V] 5 Cite« r-o UPD78941T - H01 FCR5.0MC5 Vdd- 5 CV] Fig.a-e) Typical a. V1H/V1L m 7 S 3 1 —,J I I I I -I —b.I V2H/V2L C V 3 7 .5. S V2H 3 • .4 1 1VcL 191 .4 I

RC300MD

Abstract: 30B4 39a2 sensor 50D4 44C2
Contextual Info: SENS P28G DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHECK APPROVAL 2004-12-11 BA41-00478A MP 1.1 Oscar-G Intel P-M DOTHAN ATI RC300MD + SB150 Additional USB Controller Used OSCAR-G www.kythuatvitinh.com

27B4

Abstract: 27B2 46D1 36b4 RC300MD 18b3 code 35c1 28B2 43A1 ba41-0
Contextual Info: SENS P28G DRAW Model Name : PBA Name : PCB Code : Dev. Step : Revision : T.R. Date : CPU : Chip Set : Remarks : CHECK APPROVAL 2004-12-11 BA41-00478A MP 1.1 Oscar-G Intel P-M DOTHAN ATI RC300MD + SB150 Additional USB Controller Used OSCAR-G 1. COVER PAGE 2. BLOCK DIAGRAM

KS57C2102

Contextual Info: « INVERTER GRIN/PHRSE vs. IC : KS57C2102 FREQUENQ CHRRflCTERISTICS » Vdd : 3 CV3 Freq. [MHz] K S 5 7 C 2 102 - 1 F C R 4 . 19M5 Vdd= 3 CV] F ig .a -d Ta= 20 Cdeg] •- • Typ i c a 1 ? a. V1H/V1L c. Fosc CV3 5 3 1 -1 7 5 3 1 -1 5 3 1 -1 -3 -5 400

hamming code-error detection correction

Abstract: DB10 HC630
Contextual Info: H IG H S P E E D C M O S LO GIC T Y P E S S N 5 4 H C 6 3 0 , S N 74 H C 6 3 0 16-B IT P A R A L L E L ER R O R D E T E C T IO N A N D C O R R EC TIO N CIR CU ITS D 28 04 , MARCH 1984 S H 5 4 H C 6 3 0 . . . J PACKAGE SN 74H C 630 J OR N PACKA GE High-Current 3-S tate Outputs Can Drive up